JPS6070694A - Method of producing thin film el device - Google Patents
Method of producing thin film el deviceInfo
- Publication number
- JPS6070694A JPS6070694A JP58176923A JP17692383A JPS6070694A JP S6070694 A JPS6070694 A JP S6070694A JP 58176923 A JP58176923 A JP 58176923A JP 17692383 A JP17692383 A JP 17692383A JP S6070694 A JPS6070694 A JP S6070694A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- voltage
- panel
- moisture
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 16
- 230000032683 aging Effects 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
発明の技術分野
本発明は薄膜El、(rエレクトロルミネッセンス」を
いう。)装置、特に防湿保護膜を有する薄膜1jLパネ
ルの製造方法に・函る。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention is directed to a thin film El, (relectroluminescence) device, and in particular to a method for manufacturing a thin film 1jL panel with a moisture-proof protective coating.
技術の背景
薄膜交流ELパネルは湿気にさらきれた状態で動作させ
ると、薄膜中に湿気が浸透し、動作中の高電界によって
薄膜の界面でガス(水の電気分解による水素ガスおよび
酸素ガス)が発生し、これによって薄膜が剥(惟する現
象が知られている。Technology Background When a thin-film AC EL panel is operated in a state where it is exposed to moisture, moisture penetrates into the thin film, and gases (hydrogen gas and oxygen gas due to electrolysis of water) are generated at the interface of the thin film due to the high electric field during operation. It is known that this phenomenon causes the thin film to peel off.
従来技術と問題点
上記の現象を防止する方法として、薄膜全体をガラス板
で覆って気密封止し、オイルを充填して湿気から守る方
法(オイル封止法)が一部で採用されている。しかし、
この方法では、■構造が複雑になる、■パネルの重lが
増す、■工程が複雑になってコスト高になる、などの問
題がある。Conventional technology and problems As a method to prevent the above phenomenon, some methods have been adopted in which the entire thin film is covered with a glass plate, hermetically sealed, and then filled with oil to protect it from moisture (oil sealing method). . but,
This method has problems such as: (1) the structure becomes complicated, (2) the weight of the panel increases, and (2) the process becomes complicated and costs increase.
−ツバ薄膜を用いた固体ディスプレイとしての特長を発
揮させることを目的としてl!3Lパネル形成後全面に
保護膜を被覆する方法も試みられ、保頗膜として樹脂そ
の他の絶縁体が用いられている。- With the aim of demonstrating the features of a solid-state display using a brim thin film, l! A method of covering the entire surface with a protective film after forming the 3L panel has also been attempted, and resin or other insulators have been used as the protective film.
しかし、この方法ではE’Lパ床ルの発光によってセル
内で絶縁破壊が生じたとき、熱損傷によって保護膜も損
傷を受け、そこから湿気のa人が始まるため、剥離現象
を完全に防止することができず、実用的でt」、なかっ
之。However, with this method, when dielectric breakdown occurs in the cell due to light emission from the E'L pad, the protective film is also damaged due to heat damage, and moisture begins to form from there, so the peeling phenomenon is completely prevented. I can't do it and it's not practical.
そこで、ELパネルを初期エージングし、その後で保護
膜を形成することによって、保護膜の損傷を防止し、そ
れにょ′って上記の不都合を除去することが提案されて
いる。しかし、不発lWi者らは、このエージングを行
なう場合にも、外部の湿気が薄膜に浸入し、薄膜剥離が
生じる不都合があることを見い出した。Therefore, it has been proposed to initially age the EL panel and then form a protective film to prevent damage to the protective film and thereby eliminate the above-mentioned disadvantages. However, researchers have found that even when this aging is performed, there is a problem in that external moisture infiltrates the thin film, resulting in peeling of the thin film.
発明の目的
本発明は、以上の如き問題点を解決し、実用に耐える防
湿保護膜タイプ薄膜HL装置の製造方法を提供すること
を目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and provide a method for manufacturing a moisture-proof protective film type thin-film HL device that can be put into practical use.
発明の構成
そして、本発明は、上記目的を達成するために、薄膜g
Lpl置の初期エージングを水蒸気分圧1o−3To
rr以下の雰囲気中で行ない、その後で防湿保護膜を形
成することを特徴とする。Structure of the Invention In order to achieve the above object, the present invention provides a thin film g.
The initial aging of LPL is determined by water vapor partial pressure 1o-3To
It is characterized in that it is carried out in an atmosphere below rr, and then a moisture-proof protective film is formed.
発明の実施例
rA1図をよ本発明の方法により製造した薄膜JD L
パネルの一例を示す。カラス基板1上にインジウ゛ムス
ズオキサイド(スズ5%程度)などによる透明成極(厚
さ2000人)2、’c+ilJ上4csi Nなどに
よる絶縁層(厚さ3000人)3、その上にMnを混入
したZn8 などによる発光層(厚さ7000人)4、
その上にs; 3N4 などによる絶縁膜(厚さ500
0人)5、その上にM などによる°irL極(厚さ2
000人)6の各層が形成され、これらの薄膜を例えば
樹脂(例えば、エボギシ樹脂、フッ素樹脂)などの防湿
用保護膜(厚さ100μm)7が覆っている。透明成極
2と′fIL極6はそれぞれX軸方向とY軸方向に直交
して配線されてマトリックス状の発光要素群をμ成して
いる。このMLパネルは保護M7の形成前にエージング
されているので、薄膜の絶縁耐圧の低い部分に絶縁破壊
8が発生し、その絶縁破壊後の薄膜を保護膜7が′4覆
している。Example of the invention rA1 Figure 1 shows a thin film JD L produced by the method of the invention.
An example of a panel is shown. Transparent polarization (thickness: 2,000 layers) made of indium tin oxide (approximately 5% tin) or the like on a glass substrate 1; an insulating layer (thickness: 3,000 layers) made of 4csi N or the like on 'c+ilJ; Luminescent layer (7000 layers thick) made of Zn8 mixed with 4,
On top of that is an insulating film (thickness: 500 mm) made of s; 3N4, etc.
0 people) 5, and on top of that, the °irL pole (thickness 2
000 people) 6 are formed, and these thin films are covered with a moisture-proof protective film (thickness: 100 μm) 7 made of, for example, resin (eg, epoxy resin, fluororesin). The transparent polarization 2 and the 'fIL pole 6 are wired perpendicularly to the X-axis direction and the Y-axis direction, respectively, to form a matrix-like light emitting element group μ. Since this ML panel has been aged before the formation of the protection M7, dielectric breakdown 8 occurs in a portion of the thin film with low dielectric strength, and the protective film 7 covers the thin film after the dielectric breakdown.
142図はELパネルに印加する電圧に関するffL、
<ネルの絶縁波Ja点数および発)′c輝度のグラフで
ある。図中、電圧VA(例えば200V)でf″JLJ
Lパネルに必要な輝i(が得られる。電圧の上昇と共に
絶縁破壊点・蚊が増え、その後減少する様子が見られる
。そこで、初期エージングを電゛圧Vムよシ例えば30
〜40V程度高い電圧VBで行なっておけば、ELパネ
ルの電圧VAにおける使用において絶縁破壊が起きるこ
とは防止できる。このとき注意すべきことは、初め曲線
AAで表わされた輝度特性が初期エージング後曲線BB
で表わされる輝度特性に変化することである。Figure 142 shows ffL regarding the voltage applied to the EL panel,
This is a graph of the number of insulated waves Ja and the emission)'c luminance of <Nel. In the figure, f″JLJ at voltage VA (for example, 200V)
The brightness i required for the L panel can be obtained. As the voltage increases, the number of dielectric breakdown points and mosquitoes increases, and then decreases. Therefore, if the initial aging is changed to a voltage V,
If the voltage VB is about 40 V higher, dielectric breakdown can be prevented when the EL panel is used at the voltage VA. At this time, it should be noted that the brightness characteristics initially represented by curve AA change to curve BB after initial aging.
This means that the brightness characteristics change as expressed by .
莫半#本発明では、保護膜形成に先行する初期エージン
グを水蒸気分圧10−5 ’I’Orr 以下の雰囲気
中で実施することを特徴とする。初期エージング即ち電
極間への電圧印加はこりした低い水蒸気圧下で行なわな
ければ、薄膜が剥離するので、実用的なもの°ではない
。低い水蒸気圧は高真空状態とか、乾燥窒素ガス雰囲気
を形成することによって達成できる。The present invention is characterized in that the initial aging prior to the formation of the protective film is carried out in an atmosphere with a water vapor partial pressure of 10-5'I'Orr or less. Initial aging, that is, application of a voltage between the electrodes, must be carried out under extremely low water vapor pressure, otherwise the thin film will peel off, which is not practical. Low water vapor pressure can be achieved by creating a high vacuum or a dry nitrogen gas atmosphere.
第3図に示すように、透明成極およびAt電極が形成さ
れた1!3Lパネルのx=4極端末部とY%極端末部に
複数本まとめて電圧を印加できるようにA/、などの短
絡板10.11をバネ12で固定する。これを、t14
1113内にセットし、配線14゜15を接続し、畦流
導入端子16を弁して外部のELパネル駆動成源17に
接続する。リークパルプ18を閉じ、粗引きパルプ19
を開いて真空槽13内を約5 X 10””’ Tor
r まで排気する。それから、粗引きバルブ19を閉じ
、メインバルブ20を開いて真空槽13内を5 X 1
0−’ Torr iで本引き(排気)する。As shown in Figure 3, voltages can be applied to the x=4 extreme end and the Y% extreme end of a 1!3L panel with transparent polarization and At electrodes formed, such as A/, etc. The shorting plates 10 and 11 of are fixed with springs 12. This is t14
1113, connect the wiring 14 and 15, valve the ridge introduction terminal 16, and connect it to the external EL panel drive source 17. Close the leak pulp 18 and remove the rough pulp 19
Open the vacuum chamber 13 to approximately 5 x 10"' Torr.
Exhaust to r. Then, the roughing valve 19 is closed, the main valve 20 is opened, and the inside of the vacuum chamber 13 is
0-' Perform main evacuation (exhaust) with Torr i.
これらの排気操作中、ELパネルに含まれている水分を
有効に除去するために加熱ヒータ21に通電して200
〜300℃でベーキング処理することが好ましい。こり
して、高真空状態で水分が影響しないような環境をつく
シ、EL駆動用電源17から100 Hz 〜1 k)
lz の周波数で例えば1時間程度パルス駆動する。During these exhaust operations, the heater 21 is energized to 200 mA to effectively remove moisture contained in the EL panel.
Preferably, the baking treatment is performed at ~300°C. (100 Hz to 1K) from the EL drive power supply 17 to create an environment in which moisture is not affected by high vacuum conditions.
Pulse driving is performed at a frequency of lz for about one hour, for example.
EJ、パネルの実際の使用電圧VA は発光輝度で決ま
る。初期エージング′鑞圧VB と使用電圧VAとの電
圧幅Vs−VA は、絶縁破壊に対する電圧余裕度にな
るのでできるだけ大きい方が好ましいが、大きずぎると
初期エージング中の絶縁破壊が過度に起こってffL累
子を破壊するおそれがある。EJ and the panel's actual operating voltage VA are determined by the luminance of the light emitted. The voltage width Vs-VA between the initial aging solder pressure VB and the working voltage VA is the voltage margin against dielectric breakdown, so it is preferable that it be as large as possible, but if it is too large, dielectric breakdown during initial aging will occur excessively, resulting in ffL. There is a risk of destroying the child.
V!l −VA:50〜40Vもあれば光分であると考
見られる。VAd例、えば180〜220■程度が一7
没的である。V! 1-VA: 50 to 40V is considered to be light. VAd example, for example, about 180 to 220 ■ 17
Immersive.
こうして、電圧VB を印加して初+1.J]エージン
グし、薄膜中のゴミ、異物、微小クラックなどの欠陥の
ために:耐圧の低い部分を絶縁破壊してし壕う。In this way, the voltage VB is applied and the first +1. J] Due to aging and defects such as dust, foreign matter, and minute cracks in the thin film: Dielectric breakdown occurs in areas with low breakdown voltage.
このとき、薄膜の剥離は起こらない。その後、・iFi
脂などの医護、頃を防湿条件下で41・輝する。この保
護膜の破慣(・乞よって防湿処理は完了′j″る。At this time, peeling of the thin film does not occur. After that, ・iFi
Medical protection such as fat, etc. shines at 41% under moisture-proof conditions. This protective film has been destroyed (and the moisture-proofing treatment has now been completed).
得られるELパネルは電圧VB で初期エージングを行
なっているので、電圧■へにおける使用での絶縁破壊は
防出されており、従って保r?l嘆が・員傷することも
なく、結果としてEしパネルは湿気から保護される。Since the resulting EL panel undergoes initial aging at a voltage of VB, dielectric breakdown when used at a voltage of ■ is prevented, and therefore the EL panel is maintained at a voltage of VB. There is no risk of damage or damage, and as a result the panel is protected from moisture.
発明の効果
以上の説明から明らかなよう(・こ、本発明に依り、保
護膜形成前の初期エージングの際の薄膜、D剥離が解消
され、かつ初期エージングによって薄膜の絶縁破壊に基
づく保護膜の重湯も防止されるので、実用的な防湿保護
膜タイプτ’!1lli莫EI、装置Gが提供される。Effects of the Invention As is clear from the above description, the present invention eliminates the peeling of the thin film and D during the initial aging before forming the protective film, and prevents the peeling of the protective film due to dielectric breakdown of the thin film during the initial aging. Since heavy hot water is also prevented, a practical moisture-proof protective film type τ'!1lliMoEI, device G is provided.
第1図は薄膜IALパネルの1舌面図、第2図(J、印
加1S川に関する薄膜ELパネルの箔畳破懐点数卦よび
発光層、1xのグラフ%’EE3図tj薄嘆E ]、パ
バネのエージング用M終阪取付状・>1の斜7児[凶、
第4図はエージング装置の模式断面丙である。
1・・・ガラス去板、 2・・・透明電極、 6.5・
・・絶縁層、 4・・・発光層、 6・・・電極、7・
・・防湿保護j漢、 8・・・絶縁′gl壊部、10.
it・・・短絡板、17・・・パルス駆動用α源、 2
1・・・加熱ヒータ。
特許IB順人
虐十通株式会社
特許出頓代1人
弁理士 iず 木 朗
弁理士西舘和之
弁理士 内 1)幸 男
弁1浬士 山 口 昭 之
第1図
第2図
VA Vs 電圧
第3図
第4図Fig. 1 is a single tongue view of a thin film IAL panel, Fig. 2 (J, foil folding point number and luminescent layer of a thin film EL panel regarding applied 1S river, graph of 1x %'EE3 Fig. tj lament E], Pabane's aging M end saka installation type/>1 oblique 7 child [bad,
FIG. 4 is a schematic cross-section C of the aging device. 1...Glass plate, 2...Transparent electrode, 6.5.
...Insulating layer, 4...Light emitting layer, 6...Electrode, 7.
...Moisture-proof protection, 8...Insulation'gl broken part, 10.
it... Short circuit plate, 17... α source for pulse drive, 2
1... Heater. Patent IB Junjin Gaku Jutsu Co., Ltd. Patent attorney 1 patent attorney Izu Ki Akira Patent attorney Kazuyuki Nishidate Patent attorney 1) Yuki Onoben 1st person Akira Yamaguchi Figure 1 Figure 2 VA Vs Voltage Figure 3 Figure 4
Claims (1)
の上に防湿保護膜を設けて成る薄膜Ef。 (エレクトロルミネッセンス)装置を製造するに当り、
前記保護膜を設けるのに先立って、水蒸気分圧10−3
Torr以下の雰囲気中で、前記2゛電極に表示輝度を
得るのに必要な電圧よ如も高い電圧を印加する初期エー
ジングを行なうことを特徴とする薄膜EL装置の製造方
法。[Claims] A thin film Ef comprising a light emitting layer sandwiched between two electrodes on an insulating substrate, and a moisture-proof protective film provided thereon. When manufacturing (electroluminescence) equipment,
Prior to providing the protective film, the water vapor partial pressure is 10-3.
A method for manufacturing a thin film EL device, characterized in that initial aging is performed in an atmosphere of Torr or less by applying a voltage as high as the voltage required to obtain display brightness to the 2' electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58176923A JPS6070694A (en) | 1983-09-27 | 1983-09-27 | Method of producing thin film el device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58176923A JPS6070694A (en) | 1983-09-27 | 1983-09-27 | Method of producing thin film el device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6070694A true JPS6070694A (en) | 1985-04-22 |
Family
ID=16022119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58176923A Pending JPS6070694A (en) | 1983-09-27 | 1983-09-27 | Method of producing thin film el device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6070694A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366895A (en) * | 1986-09-05 | 1988-03-25 | 松下電器産業株式会社 | Method of aging thin film el device |
JPH02174089A (en) * | 1988-12-27 | 1990-07-05 | Yokogawa Electric Corp | Manufacture of thin-film el element |
JPH0410390A (en) * | 1990-04-26 | 1992-01-14 | Mitsubishi Cable Ind Ltd | Electroluminescent lamp and method for stabilizing brightness thereof |
-
1983
- 1983-09-27 JP JP58176923A patent/JPS6070694A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366895A (en) * | 1986-09-05 | 1988-03-25 | 松下電器産業株式会社 | Method of aging thin film el device |
JPH02174089A (en) * | 1988-12-27 | 1990-07-05 | Yokogawa Electric Corp | Manufacture of thin-film el element |
JPH0410390A (en) * | 1990-04-26 | 1992-01-14 | Mitsubishi Cable Ind Ltd | Electroluminescent lamp and method for stabilizing brightness thereof |
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