JPS60143595A - Electric field light emitting panel - Google Patents
Electric field light emitting panelInfo
- Publication number
- JPS60143595A JPS60143595A JP58250056A JP25005683A JPS60143595A JP S60143595 A JPS60143595 A JP S60143595A JP 58250056 A JP58250056 A JP 58250056A JP 25005683 A JP25005683 A JP 25005683A JP S60143595 A JPS60143595 A JP S60143595A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- film
- light emitting
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 title description 3
- 238000002161 passivation Methods 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 41
- 230000015556 catabolic process Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は電界発光（Ｅｌｅｃｔｒｏ Ｌｕｍ１ｎｅｓｃ
ｅｎｃｅ： ＥＬ）ハネルに係す、特にＥＬパネルのパ
ッシベーション膜の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical field of the invention The present invention relates to electroluminescence
ence: EL) Related to Hanel, particularly to improvements to passivation films for EL panels.
（２）技術の背景
ＥＬは粉末螢光体あるいは螢光体薄膜に強電界を加える
と発光する現象を利用するものであり。(2) Background of the technology EL utilizes the phenomenon that a powder phosphor or a phosphor thin film emits light when a strong electric field is applied to it.
一般的には７．ｎｓ ： ＣｎＭｎ、ＺｎＳ ：Ｍｎ等
の発光膜を２枚の電極ではさみ、光を取り出すために一
方の電極を透明電極としたものであり、現在では発光膜
と絶縁膜とを利用した薄膜形ＥＬパネルが多く用いられ
ている。Generally 7. ns: CnMn, ZnS: A light-emitting film such as Mn is sandwiched between two electrodes, and one electrode is a transparent electrode to extract light.Currently, thin-film EL uses a light-emitting film and an insulating film. Many panels are used.
ＥＬパネルにおける問題の一つに絶縁破壊を起こさずに
強電界を加え続けられるかと云うことがあった。この点
について第１図を参照し従来の構成について詳記する。One of the problems with EL panels is whether a strong electric field can be applied continuously without causing dielectric breakdown. Regarding this point, the conventional configuration will be described in detail with reference to FIG.
（３）従来技術の問題点
第１図は従来のＥＬパネルの構造とその欠点を示すため
の模式的な断面図であり、同図において。(3) Problems with the Prior Art FIG. 1 is a schematic cross-sectional view showing the structure of a conventional EL panel and its drawbacks.
１はガラス基板、２は透明電極、３は絶縁膜、４ハ発光
膜、５は絶縁膜、６は電極、７はパッシベーション膜の
シ゛リコン樹脂等からなるバソシベージョン膜、８は透
明電極２と電極６間に加えられる交流電源である。1 is a glass substrate, 2 is a transparent electrode, 3 is an insulating film, 4 is a light emitting film, 5 is an insulating film, 6 is an electrode, 7 is a passivation film made of silicone resin, etc., 8 is a transparent electrode 2 and an electrode 6 AC power is applied between the two.
従来のこのようなＥＬパネル構造においてのパッシベー
ション方法としてオイルを封止したもの。Oil is sealed as a passivation method in the conventional EL panel structure.
厚い絶縁膜として硬い樹脂を用いたもの等が利用されて
いるがオイルを封入するものではオイルを封入するため
の裏蓋を必要とし機械的強度が弱く。Thick insulating films made of hard resin are used, but those that seal in oil require a back cover to seal in the oil and have low mechanical strength.
且つオイルを封入するプロセスが非常に複雑であるため
にコスト高となる。又、硬い樹脂を用いるものはＥＬナ
セル絶縁破壊を起したときのショックでこの硬い樹脂に
クラックが入って水分等がＥＬセル内に侵入してパンシ
ベーションの役目を果さなくなる。Moreover, the process of sealing in oil is very complicated, resulting in high costs. In addition, in the case where a hard resin is used, the hard resin cracks due to the shock when dielectric breakdown occurs in the EL nacelle, allowing water and the like to enter the EL cell, making it impossible to perform the role of pansivation.
更に第１図に示すものでは樹脂は比較的硬いためにＥＬ
ナセル絶縁破壊を起したときのピンホール部分９に発生
するガス１０でシリコン樹脂からなるパッシベーション
膜７がＥＬナセルら剥離する時に絶縁膜５に蒸着されて
いる電極６がパッシベーション膜７と一緒に剥離する。Furthermore, in the case shown in Figure 1, the resin is relatively hard, so the EL
When the passivation film 7 made of silicone resin is peeled off from the EL nacelle due to the gas 10 generated in the pinhole portion 9 when the nacelle dielectric breakdown occurs, the electrode 6 deposited on the insulating film 5 is peeled off together with the passivation film 7. do.
この原因は硬い樹脂のパッシベーション膜７と電極６と
の強い密着力に比べて電極６と絶縁膜５との密着力が弱
いことに起因している。この結果絶縁破壊に伴うピンホ
ール部分９の直径が２０〜３０μφであるとすればこの
発光停止領域以外にピンホール部分９の周囲の例えば１
００μφ領域も電極がもちあげられて発光停止領域が拡
大される欠点を有する。This is because the adhesion between the electrode 6 and the insulating film 5 is weaker than the strong adhesion between the hard resin passivation film 7 and the electrode 6. As a result, if the diameter of the pinhole portion 9 due to dielectric breakdown is 20 to 30 μφ, for example, 1
The 00 μφ region also has the disadvantage that the electrode is lifted up and the light emission stop region is expanded.
（４）発明の目的
本発明は上記従来の欠点に鑑み、ＥＬナセル絶縁破壊に
よつて生ずるガスでパッシベーション膜と共に電極が絶
縁膜から剥離しないポーラスな絶縁膜を電極とパッシベ
ーション膜間に介在させて安定に動作するＥＬパネルを
提供することを目的とするものである。(4) Purpose of the Invention In view of the above-mentioned conventional drawbacks, the present invention provides a porous insulating film that is interposed between the electrode and the passivation film so that the electrode and the electrode do not peel off from the insulating film together with the passivation film due to gas generated by dielectric breakdown of the EL nacelle. The purpose is to provide an EL panel that operates stably.
（５）発明の構成
上記目的は本発明によればガラス基板上に形成した電界
発光セルの電極上にポーラスな絶縁膜を介して樹脂のパ
ッシベーション膜を有することを特徴とする電界発光パ
ネルを提供することで達成される。(5) Structure of the Invention The above-mentioned object of the present invention is to provide an electroluminescent panel characterized in that it has a resin passivation film on the electrode of an electroluminescent cell formed on a glass substrate with a porous insulating film interposed therebetween. It is achieved by doing.
（６）発明の実施例
以下９本発明のＥＬパネルの一実施例を第２図及び第３
図について詳記する。(6) Embodiments of the Invention The following nine embodiments of the EL panel of the present invention are shown in Figures 2 and 3.
Describe the diagram in detail.
第２図は本発明のＥＬパネルの構成を模式的に示した側
断面図、第３図は本発明のＥＬパネルが絶縁破壊を起し
た時の状態を模式的に示した。側断面図である。FIG. 2 is a side sectional view schematically showing the structure of the EL panel of the present invention, and FIG. 3 is a schematic diagram showing the state when dielectric breakdown occurs in the EL panel of the present invention. FIG.
尚第１図と同一部分には同一符号を付して示す。Note that the same parts as in FIG. 1 are designated by the same reference numerals.
第２図において、ガラス基板１上に透明電極２としてＩ
ＴＯを２０００人厚に蒸着し、更に該透明電極上に絶縁
膜３としてＳ ｉ ３ Ｎ ｍを２０００人厚に蒸着す
る。発光膜４としてＺｎＳ：Ｍｎを６０００人厚に１上
記絶縁膜３形成後に積層し、さらに絶縁膜５（ＳｉｓＮ
ｌｌ）を２０００人上記発光１１ｉ４上に積層してＡＩ
！の電極６を３０００人厚に絶縁膜５上に形成すること
でＥＬナセル作成する。 その後パッシベーション膜と
してポーラスな絶縁膜１１としてＳｌｏを５０００人厚
に電極６上に形成後シリコン樹脂７でＥＬナセル片面を
覆うことで水分の侵入を遮断する。In FIG. 2, I as a transparent electrode 2 on a glass substrate 1.
TO is vapor-deposited to a thickness of 2,000 layers, and Si 3 Nm is further vapor-deposited to a thickness of 2,000 layers as an insulating film 3 on the transparent electrode. As a light emitting film 4, ZnS:Mn is laminated to a thickness of 6000 nm after the above insulating film 3 is formed, and an insulating film 5 (SisN
ll) on the above light emitting 11i4 and AI
! An EL nacelle is fabricated by forming an electrode 6 of 3000 mm thick on the insulating film 5. Thereafter, Slo is formed as a porous insulating film 11 as a passivation film to a thickness of 5,000 layers on the electrode 6, and one side of the EL nacelle is covered with a silicone resin 7 to block moisture from entering.
上記したポーラスなＳｉＯの絶縁膜を得るため５− にはＡｒのごとき不活性ガス中で蒸着を行ない。In order to obtain the above-mentioned porous SiO insulating film, 5- The deposition is carried out in an inert gas such as Ar.
Ａｒを１０−２ｔｏｒｒ〜１０ ’ ｔｏｒｒの圧力範
囲で真空中に導入し、ＳｉＯ粉末を抵抗線加熱法により
ＡＪの電極６上に蒸着させた。Ａｒガスを導入すること
でガスが充分に通るポーラスなＳｉＯの絶縁膜が形成出
来た。Ar was introduced into a vacuum at a pressure range of 10 −2 torr to 10′ torr, and SiO powder was deposited on the electrode 6 of the AJ by a resistance wire heating method. By introducing Ar gas, a porous SiO insulating film through which gas could sufficiently pass could be formed.
上記実施例ではポーラスな絶縁膜１１としてＳｉＯにつ
いて詳記したがＳｉＯ２やＡＡ２０３微粒子膜等を用い
ることも出来る。In the above embodiment, SiO was described in detail as the porous insulating film 11, but SiO2, AA203 fine particle film, etc. can also be used.
又本発明で定義されるポーラスな絶縁膜１１とは上記Ｓ
ｉｎ、ＳｉＯ２，Ａｎ２０３の蒸着時の充愼時の充填密
度が５０５％以下の海綿状の薄膜で焼結金属のように多
数の通気孔をランダムに有するものである。Further, the porous insulating film 11 defined in the present invention is the above-mentioned S
It is a spongy thin film with a packing density of 505% or less when filled during vapor deposition of in, SiO2, An203, and has a large number of ventilation holes randomly like a sintered metal.
本発明のＥＬパネルによれば第３図示のようにＥＬナセ
ル絶縁膜３．５が絶縁破壊されてガス１０が発生しても
ピンホール部分９から噴出したガス１０はポーラスな絶
縁膜１１を通り抜けてその上のシリコン樹脂７を押し上
げるがＡｒの電極６とポーラスな絶縁膜１１はピンホー
ル部分９以６−
外に剥離を生じなかった。従って、絶縁膜３．５が絶縁
破壊しても、電極６が２０〜３０μφ程度しか剥離せず
、電極６の残りの部分はＥ Ｌ表示用として十分に使用
できる。According to the EL panel of the present invention, even if the EL nacelle insulating film 3.5 is dielectrically broken down and gas 10 is generated as shown in FIG. 3, the gas 10 ejected from the pinhole portion 9 passes through the porous insulating film 11. Although the silicone resin 7 thereon was pushed up, the Ar electrode 6 and the porous insulating film 11 did not peel off beyond the pinhole portion 9. Therefore, even if the insulating film 3.5 undergoes dielectric breakdown, the electrode 6 will only peel off by about 20 to 30 μΦ, and the remaining portion of the electrode 6 can be used sufficiently for EL display.
（７）発明の効果
本発明は叙上の如＜Ａ７！の電極上に簡単にポーラスな
絶縁膜を形成するだけで絶縁破壊に強い信頼性の高いＥ
Ｌパネルを得ることができる特徴を有する。(7) Effects of the invention The present invention is as described above. By simply forming a porous insulating film on the electrode, highly reliable E
It has the characteristic of being able to obtain an L panel.
第１図は従来のＥ Ｌパネルの絶縁破壊状態を模式的に
示した側断面図、第２図は本発明のＥＬパネルの側断面
を示す模式図、第３図は第２図のＥＬパネルに絶縁破壊
を生じた時の状態を模式的に示した側断面図である。
１・・・ガラス基板 ２・・・透明電
極 ３．５・・・絶縁膜
４・・・発光膜 ６・・・電極
７・・・シリコン樹脂等のパンシベーション膜９・・・
ピンホール部分
１０・・・ガス １１・・・ポーラス
な絶縁膜
特許出願人 富士通株式会社
第１図
第２図
第３図Figure 1 is a side sectional view schematically showing the dielectric breakdown state of a conventional EL panel, Figure 2 is a side sectional view schematically showing the EL panel of the present invention, and Figure 3 is the EL panel of Figure 2. FIG. 3 is a side sectional view schematically showing a state when dielectric breakdown occurs. DESCRIPTION OF SYMBOLS 1...Glass substrate 2...Transparent electrode 3.5...Insulating film 4...Light emitting film 6...Electrode 7...Pansivation film 9, such as silicone resin...
Pinhole portion 10... Gas 11... Porous insulating film Patent applicant Fujitsu Ltd. Figure 1 Figure 2 Figure 3
Claims (4)
ポーラスな絶縁膜を介して樹脂のパッシベーション膜を
有することを特徴とする電界発光パネル。(1) An electroluminescent panel characterized by having a resin passivation film on an electrode of an electroluminescent cell formed on a glass substrate with a porous insulating film interposed therebetween.
ることを特徴とする特許請求の範囲第１項記載の電界発
光パネル。(2) The electroluminescent panel according to claim 1, wherein SiO is selected as the porous insulating film.
なることを特徴とする特許請求の範囲第１項記載の電界
発光パネル。(3) The electroluminescent panel according to claim 1, wherein SiO2 is selected as the porous insulating film.
してなることを特徴とする特許請求の範囲第１項記載の
電界発光パネル。(4) The electroluminescent panel according to claim 1, wherein A7!203 is selected as the porous insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250056A JPS60143595A (en) | 1983-12-28 | 1983-12-28 | Electric field light emitting panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250056A JPS60143595A (en) | 1983-12-28 | 1983-12-28 | Electric field light emitting panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60143595A true JPS60143595A (en) | 1985-07-29 |
Family
ID=17202141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58250056A Pending JPS60143595A (en) | 1983-12-28 | 1983-12-28 | Electric field light emitting panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60143595A (en) |
-
1983
- 1983-12-28 JP JP58250056A patent/JPS60143595A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60182692A (en) | Thin film el element and method of producing same | |
| WO1988002209A1 (en) | Thin-film el device | |
| JPS60143595A (en) | Electric field light emitting panel | |
| JPS598039B2 (en) | Thin film EL panel | |
| JPS61224290A (en) | Thin film el element | |
| JPS5829880A (en) | Electric field luminescent element | |
| JPS6147097A (en) | Electroluminescent element | |
| JPS59101795A (en) | Electroluminescence thin film display device | |
| JPH11260563A (en) | Organic el element | |
| JPH0541284A (en) | El element | |
| JPS59149607A (en) | Transparent electrode | |
| JPS5832393A (en) | Thin film electric field light emitting element | |
| GB2212980A (en) | Electroluminescent display device | |
| KR910004067A (en) | Thin film EL display device and manufacturing method thereof | |
| JPH0740515B2 (en) | Thin film light emitting device | |
| JPS62123692A (en) | Reflective field light emiiting device | |
| JPH03236195A (en) | Double-insulated thin film electroluminescence device | |
| JPS6314833B2 (en) | ||
| JPS62126592A (en) | Manufacture of el panel | |
| JPS6041436B2 (en) | Thin film EL panel | |
| JPS60202683A (en) | El panel | |
| JPS62269986A (en) | Film formation for thin film display panel | |
| KR19980051991A (en) | High adhesive transparent conductive film for electro luminescence display element and manufacturing method thereof | |
| JPS62211894A (en) | Thin film el panel | |
| JPH04167397A (en) | Manufacture of green luminous thin film el element |