JPS6066470A - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JPS6066470A
JPS6066470A JP58174633A JP17463383A JPS6066470A JP S6066470 A JPS6066470 A JP S6066470A JP 58174633 A JP58174633 A JP 58174633A JP 17463383 A JP17463383 A JP 17463383A JP S6066470 A JPS6066470 A JP S6066470A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
light
thin film
multilayer reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58174633A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451070B2 (OSRAM
Inventor
Fujio Okumura
藤男 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58174633A priority Critical patent/JPS6066470A/ja
Publication of JPS6066470A publication Critical patent/JPS6066470A/ja
Publication of JPH0451070B2 publication Critical patent/JPH0451070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Liquid Crystal (AREA)
JP58174633A 1983-09-21 1983-09-21 薄膜トランジスタ Granted JPS6066470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58174633A JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58174633A JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS6066470A true JPS6066470A (ja) 1985-04-16
JPH0451070B2 JPH0451070B2 (OSRAM) 1992-08-18

Family

ID=15982001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58174633A Granted JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS6066470A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552630A (en) * 1990-04-13 1996-09-03 Fuji Xerox Co., Ltd. Thin film transistor having metallic light shield
US5801400A (en) * 1995-01-10 1998-09-01 Victor Company Of Japan, Ltd. Active matrix device
JP2016048706A (ja) * 2014-08-27 2016-04-07 三菱電機株式会社 アレイ基板およびその製造方法
CN114746981A (zh) * 2019-11-27 2022-07-12 康宁股份有限公司 用于半导体装置制造的玻璃晶片

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552630A (en) * 1990-04-13 1996-09-03 Fuji Xerox Co., Ltd. Thin film transistor having metallic light shield
US5801400A (en) * 1995-01-10 1998-09-01 Victor Company Of Japan, Ltd. Active matrix device
JP2016048706A (ja) * 2014-08-27 2016-04-07 三菱電機株式会社 アレイ基板およびその製造方法
CN114746981A (zh) * 2019-11-27 2022-07-12 康宁股份有限公司 用于半导体装置制造的玻璃晶片
JP2023503576A (ja) * 2019-11-27 2023-01-31 コーニング インコーポレイテッド 半導体デバイス製造用のガラスウェハ

Also Published As

Publication number Publication date
JPH0451070B2 (OSRAM) 1992-08-18

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