JPS6066431A - 位置検知方法及びその装置 - Google Patents

位置検知方法及びその装置

Info

Publication number
JPS6066431A
JPS6066431A JP58175636A JP17563683A JPS6066431A JP S6066431 A JPS6066431 A JP S6066431A JP 58175636 A JP58175636 A JP 58175636A JP 17563683 A JP17563683 A JP 17563683A JP S6066431 A JPS6066431 A JP S6066431A
Authority
JP
Japan
Prior art keywords
light
slit
grating
wafer
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175636A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430734B2 (enrdf_load_html_response
Inventor
Ryukichi Matsumura
松村　隆吉
Taketoshi Yonezawa
米澤　武敏
Noboru Nomura
登 野村
Koichi Kugimiya
公一 釘宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58175636A priority Critical patent/JPS6066431A/ja
Priority to US06/599,734 priority patent/US4636077A/en
Publication of JPS6066431A publication Critical patent/JPS6066431A/ja
Priority to US07/296,721 priority patent/USRE33669E/en
Publication of JPH0430734B2 publication Critical patent/JPH0430734B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Control Of Position Or Direction (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP58175636A 1983-04-15 1983-09-21 位置検知方法及びその装置 Granted JPS6066431A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58175636A JPS6066431A (ja) 1983-09-21 1983-09-21 位置検知方法及びその装置
US06/599,734 US4636077A (en) 1983-04-15 1984-04-12 Aligning exposure method
US07/296,721 USRE33669E (en) 1983-04-15 1989-01-12 Aligning exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175636A JPS6066431A (ja) 1983-09-21 1983-09-21 位置検知方法及びその装置

Publications (2)

Publication Number Publication Date
JPS6066431A true JPS6066431A (ja) 1985-04-16
JPH0430734B2 JPH0430734B2 (enrdf_load_html_response) 1992-05-22

Family

ID=15999546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175636A Granted JPS6066431A (ja) 1983-04-15 1983-09-21 位置検知方法及びその装置

Country Status (1)

Country Link
JP (1) JPS6066431A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223609A (ja) * 1988-05-26 1990-01-25 American Teleph & Telegr Co <Att> デバイス製造方法
JP2009272373A (ja) * 2008-05-01 2009-11-19 Canon Inc 計測装置、計測方法、露光装置及びデバイス製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223609A (ja) * 1988-05-26 1990-01-25 American Teleph & Telegr Co <Att> デバイス製造方法
JP2009272373A (ja) * 2008-05-01 2009-11-19 Canon Inc 計測装置、計測方法、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JPH0430734B2 (enrdf_load_html_response) 1992-05-22

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