JPS6065588A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS6065588A
JPS6065588A JP58172897A JP17289783A JPS6065588A JP S6065588 A JPS6065588 A JP S6065588A JP 58172897 A JP58172897 A JP 58172897A JP 17289783 A JP17289783 A JP 17289783A JP S6065588 A JPS6065588 A JP S6065588A
Authority
JP
Japan
Prior art keywords
laser
diffraction grating
grating
periodic
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58172897A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6355232B2 (enrdf_load_stackoverflow
Inventor
Hideto Furuyama
英人 古山
Yutaka Uematsu
豊 植松
Hajime Okuda
肇 奥田
Yuzo Hirayama
雄三 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58172897A priority Critical patent/JPS6065588A/ja
Publication of JPS6065588A publication Critical patent/JPS6065588A/ja
Publication of JPS6355232B2 publication Critical patent/JPS6355232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP58172897A 1983-09-21 1983-09-21 半導体レ−ザの製造方法 Granted JPS6065588A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172897A JPS6065588A (ja) 1983-09-21 1983-09-21 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172897A JPS6065588A (ja) 1983-09-21 1983-09-21 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS6065588A true JPS6065588A (ja) 1985-04-15
JPS6355232B2 JPS6355232B2 (enrdf_load_stackoverflow) 1988-11-01

Family

ID=15950360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172897A Granted JPS6065588A (ja) 1983-09-21 1983-09-21 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS6065588A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614223A (ja) * 1984-06-19 1986-01-10 Ricoh Co Ltd 薄膜デバイスのビツトパタ−ン形成方法
JPS6273690A (ja) * 1985-09-26 1987-04-04 Sharp Corp 半導体レ−ザ−素子
US5020072A (en) * 1989-05-22 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US5023198A (en) * 1990-02-28 1991-06-11 At&T Bell Laboratories Method for fabricating self-stabilized semiconductor gratings
US6862394B2 (en) * 2002-01-07 2005-03-01 Triquint Technology Holding Co. Wavelength tunable laser and method of formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614223A (ja) * 1984-06-19 1986-01-10 Ricoh Co Ltd 薄膜デバイスのビツトパタ−ン形成方法
JPS6273690A (ja) * 1985-09-26 1987-04-04 Sharp Corp 半導体レ−ザ−素子
US5020072A (en) * 1989-05-22 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US5023198A (en) * 1990-02-28 1991-06-11 At&T Bell Laboratories Method for fabricating self-stabilized semiconductor gratings
US6862394B2 (en) * 2002-01-07 2005-03-01 Triquint Technology Holding Co. Wavelength tunable laser and method of formation

Also Published As

Publication number Publication date
JPS6355232B2 (enrdf_load_stackoverflow) 1988-11-01

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