JPH0516677B2 - - Google Patents
Info
- Publication number
- JPH0516677B2 JPH0516677B2 JP59282128A JP28212884A JPH0516677B2 JP H0516677 B2 JPH0516677 B2 JP H0516677B2 JP 59282128 A JP59282128 A JP 59282128A JP 28212884 A JP28212884 A JP 28212884A JP H0516677 B2 JPH0516677 B2 JP H0516677B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum well
- energy band
- layers
- interdiffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009826 distribution Methods 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 3
- 230000005476 size effect Effects 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 131
- 238000005253 cladding Methods 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 241001633942 Dais Species 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56758484A | 1984-01-03 | 1984-01-03 | |
| US567584 | 1984-01-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60160191A JPS60160191A (ja) | 1985-08-21 |
| JPH0516677B2 true JPH0516677B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=24267768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59282128A Granted JPS60160191A (ja) | 1984-01-03 | 1984-12-27 | 半導体構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60160191A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115385A (ja) * | 1984-07-02 | 1986-01-23 | Nec Corp | 半導体レ−ザ |
| JPS63228782A (ja) * | 1987-03-18 | 1988-09-22 | Toshiba Corp | レ−ザ装置 |
| JPH0521829A (ja) * | 1991-07-12 | 1993-01-29 | Hitachi Ltd | 半導体装置 |
| JP2013058580A (ja) * | 2011-09-08 | 2013-03-28 | Fuji Electric Co Ltd | 量子型赤外線検出器 |
-
1984
- 1984-12-27 JP JP59282128A patent/JPS60160191A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1976 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60160191A (ja) | 1985-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |