JPS6063918A - 分子線源用セル - Google Patents

分子線源用セル

Info

Publication number
JPS6063918A
JPS6063918A JP17279983A JP17279983A JPS6063918A JP S6063918 A JPS6063918 A JP S6063918A JP 17279983 A JP17279983 A JP 17279983A JP 17279983 A JP17279983 A JP 17279983A JP S6063918 A JPS6063918 A JP S6063918A
Authority
JP
Japan
Prior art keywords
cell
molecular beam
beam source
source
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17279983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136977B2 (enrdf_load_stackoverflow
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井　純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP17279983A priority Critical patent/JPS6063918A/ja
Publication of JPS6063918A publication Critical patent/JPS6063918A/ja
Publication of JPH0136977B2 publication Critical patent/JPH0136977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17279983A 1983-09-17 1983-09-17 分子線源用セル Granted JPS6063918A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17279983A JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17279983A JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Publications (2)

Publication Number Publication Date
JPS6063918A true JPS6063918A (ja) 1985-04-12
JPH0136977B2 JPH0136977B2 (enrdf_load_stackoverflow) 1989-08-03

Family

ID=15948578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17279983A Granted JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Country Status (1)

Country Link
JP (1) JPS6063918A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009040615A (ja) * 2007-08-06 2009-02-26 Choshu Industry Co Ltd 分子線源セル

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752565U (enrdf_load_stackoverflow) * 1980-09-12 1982-03-26
JPS5795233U (enrdf_load_stackoverflow) * 1980-12-01 1982-06-11
JPS6018540A (ja) * 1983-06-20 1985-01-30 イ−ストマン・コダツク・カンパニ− ポリカ−ボネ−トラテツクス組成物
JPS6027118A (ja) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp 分子線膜成長装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752565U (enrdf_load_stackoverflow) * 1980-09-12 1982-03-26
JPS5795233U (enrdf_load_stackoverflow) * 1980-12-01 1982-06-11
JPS6018540A (ja) * 1983-06-20 1985-01-30 イ−ストマン・コダツク・カンパニ− ポリカ−ボネ−トラテツクス組成物
JPS6027118A (ja) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp 分子線膜成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009040615A (ja) * 2007-08-06 2009-02-26 Choshu Industry Co Ltd 分子線源セル

Also Published As

Publication number Publication date
JPH0136977B2 (enrdf_load_stackoverflow) 1989-08-03

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