JPS6055916B2 - timing circuit - Google Patents

timing circuit

Info

Publication number
JPS6055916B2
JPS6055916B2 JP55133988A JP13398880A JPS6055916B2 JP S6055916 B2 JPS6055916 B2 JP S6055916B2 JP 55133988 A JP55133988 A JP 55133988A JP 13398880 A JP13398880 A JP 13398880A JP S6055916 B2 JPS6055916 B2 JP S6055916B2
Authority
JP
Japan
Prior art keywords
circuit
reset
control signal
signal
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55133988A
Other languages
Japanese (ja)
Other versions
JPS5760584A (en
Inventor
和雄 徳重
俊夫 江口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55133988A priority Critical patent/JPS6055916B2/en
Publication of JPS5760584A publication Critical patent/JPS5760584A/en
Publication of JPS6055916B2 publication Critical patent/JPS6055916B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 本発明はタイミング回路に関し、特に MOSFETを用いた非同期式スタチツクメモリに用い
られるタイミング回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a timing circuit, and more particularly to a timing circuit used in an asynchronous static memory using MOSFETs.

一般に非同期式スタチツクメモリにおいては電力制御信
号CSを有している。
Generally, an asynchronous static memory has a power control signal CS.

信号CSが活性化されると一連の電力制御用内部信号C
S、、CS2・・・CSnが活性化され、それらの信号
によりメモリのアドレス回路、デコーダ回路、センス回
路等が活性化されメモリとして機能する。しカルながら
従来の方式においては信号CSが非活性化されると、そ
れにつれて一連の制御信号CS、、CS。・・・CSn
が非活性化されるわけであるが、非活性の期間が短いと
回路内部はリセットされずに前の状態一畠・、、’!−
1、良・・i・ 會 L−&− ↓ ・一、岬:、、、
ミミ;:Ilrcに(■■、、、4に(■■、n、’一
、Z−il:キに性化されることが起る。
When signal CS is activated, a series of power control internal signals C
CS2, . However, in the conventional system, when the signal CS is deactivated, a series of control signals CS, . ...CSn
is deactivated, but if the period of deactivation is short, the inside of the circuit will not be reset and will return to the previous state...'! −
1, good...i, meeting L-&- ↓ ・1, Misaki:...
Mimi;: It happens that Ilrc becomes (■■,,,4, (■■, n, '1, Z-il: Ki).

この様な場合次の活性化期間においては、前の状態のリ
セットを行つてから選択されたメモリセルのアクセスに
対応した状態にせしめるわけであるので当然速度が遅く
なる。非活性期間が十分に長いと、回路内部はリセット
され速度はすなわち、リセットは回路内部を初期状態化
し、これに続く活性動作を高速に行なうために多用され
ている。例えば第1と第2のデータラインに゛゛1’’
、゛’0’’が先の活性サイクルで出力されていた場合
にこのまま次の活性サイクルでこれらデータラインを逆
の゛゛0’’、’’1’’に設定することは多大の時間
を要する。特に活性サイクル期間が短くこの活性期間内
でデータが充分に反転していない場合、続いて非活性期
間に電流能力の小さい保持用負荷を介してこのデータの
反転を行なわねばならず。回路動作はきわめて遅くなる
。本発明の目的は、非活性化期間が短い場合においても
、内部回路をリセットをた後に内部制御信)号を非活性
化するタイミング回路を提供することにある。
In such a case, in the next activation period, the previous state is reset and then the selected memory cell is brought into a state corresponding to the access, which naturally slows down the speed. If the inactive period is sufficiently long, the inside of the circuit is reset and the speed is increased. In other words, reset is often used to initialize the inside of the circuit and perform the subsequent activation operation at high speed. For example, ``1'' on the first and second data lines
, If ``0'' was output in the previous active cycle, it takes a lot of time to set these data lines to the opposite values ``0'' and ``1'' in the next active cycle. . In particular, if the active cycle period is short and the data is not sufficiently inverted within this active period, then this data must be inverted during the inactive period via a holding load with a small current capacity. Circuit operation becomes extremely slow. An object of the present invention is to provide a timing circuit that deactivates an internal control signal after resetting the internal circuit even when the deactivation period is short.

本発明は、内部リセット信号を遅延回路に通し、この遅
延信号に応答して内部制御信号を非活化することを特徴
とする。第1図に本発明の基本的構成を示す。
The present invention is characterized in that an internal reset signal is passed through a delay circuit, and the internal control signal is inactivated in response to the delayed signal. FIG. 1 shows the basic configuration of the present invention.

第1図に7おいては、一連のリセット信号RS、、RS
2、・・・RSmがリセット信号発生回路3から発生し
、リセット信号により回路内部がリセットされるに十分
な時間の遅延回路2を介し回路活性化信号発生回路1を
リセットすることを示す。このように構成することによ
つて、外部制御信号によつて規定される活性化期間が短
くても、内部の実効的な活性期間に遅延回路の遅延時間
だけ長くできるために、回路を充分に動作させ、よつて
速度の遅れを小さくとどめることができる。第2図に本
発明の一実施例を示す。
At 7 in FIG. 1, a series of reset signals RS, RS
2, . . . RSm is generated from the reset signal generation circuit 3, and the circuit activation signal generation circuit 1 is reset through the delay circuit 2 for a time sufficient for the reset signal to reset the inside of the circuit. With this configuration, even if the activation period specified by the external control signal is short, the internal effective activation period can be extended by the delay time of the delay circuit, so that the circuit can be Therefore, the speed delay can be kept small. FIG. 2 shows an embodiment of the present invention.

第3図に第2図の実施例の動作波形を示す。第2図にお
いてはブロック21は活性化信号発生回路、ブロック2
2はリセット信号発生回路、ブロック23は遅延回路で
ある。ます外部入力信号CSが活性化(低レベル)され
ると、内部信号CSlが活性化され、リセット信号RS
lは非活性化されメモリとして機能する。次に外部入力
信号CSが非活性化(高レベル)されるとリセット信号
RSlは活性化され回路内部はリセットされ始めるが、
制御信号CSlは遅延回路23によりまだ非活性化され
ない。制御信号CSlはリセット信号RSlにより回路
内部がリセットされるに十分な時附匡d(Taは遅延回
路23により決定される。)経過した後に非活性化され
る。この様にすることにより、回路内部がリセットされ
た状態、すなわち外部入力信号CSの非活性化期間が十
分長い時と同様の動作がCSの非活性化期間が短い場合
にも可能となり速度は遅れない。
FIG. 3 shows operating waveforms of the embodiment shown in FIG. In FIG. 2, block 21 is an activation signal generation circuit, block 2
2 is a reset signal generation circuit, and block 23 is a delay circuit. When the external input signal CS is first activated (low level), the internal signal CSl is activated and the reset signal RS is activated.
l is inactivated and functions as a memory. Next, when the external input signal CS is deactivated (high level), the reset signal RSl is activated and the inside of the circuit begins to be reset.
Control signal CS1 is not yet inactivated by delay circuit 23. The control signal CS1 is inactivated after a time period d (Ta is determined by the delay circuit 23) sufficient for the inside of the circuit to be reset by the reset signal RS1. By doing this, the same operation as when the inside of the circuit is reset, that is, when the inactivation period of the external input signal CS is sufficiently long, is possible even when the inactivation period of CS is short, and the speed is delayed. do not have.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の基本構成図を示す図、第2図は本発明
の一実施例を示す図、第3図は実施例の動作波形を示す
図である。 1・・・・・・活性化信号発生回路、2・・・・・・遅
延回路、3・・・・・・リセット信号発生回路。
FIG. 1 is a diagram showing a basic configuration diagram of the present invention, FIG. 2 is a diagram showing an embodiment of the present invention, and FIG. 3 is a diagram showing operational waveforms of the embodiment. 1... Activation signal generation circuit, 2... Delay circuit, 3... Reset signal generation circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 外部から非同期的に与えられる外部制御信号の第1
のレベルに応答して内部回路の活性化制御信号を発生す
る第1の回路と、上記外部制御信号の第2のレベルに応
答して内部回路をリセットするリセット制御信号を発生
する第2の回路と、上記リセット制御信号を遅延する遅
延回路とを有し、該遅延回路の出力によつて上記第1の
回路を非活性化して該活性化制御信号を消滅させること
を特徴としたタイミング回路。
1 The first of the external control signals given asynchronously from the outside
a first circuit that generates an activation control signal for the internal circuit in response to the level of the external control signal; and a second circuit that generates a reset control signal that resets the internal circuit in response to the second level of the external control signal. and a delay circuit that delays the reset control signal, and the output of the delay circuit deactivates the first circuit and eliminates the activation control signal.
JP55133988A 1980-09-26 1980-09-26 timing circuit Expired JPS6055916B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55133988A JPS6055916B2 (en) 1980-09-26 1980-09-26 timing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55133988A JPS6055916B2 (en) 1980-09-26 1980-09-26 timing circuit

Publications (2)

Publication Number Publication Date
JPS5760584A JPS5760584A (en) 1982-04-12
JPS6055916B2 true JPS6055916B2 (en) 1985-12-07

Family

ID=15117751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55133988A Expired JPS6055916B2 (en) 1980-09-26 1980-09-26 timing circuit

Country Status (1)

Country Link
JP (1) JPS6055916B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148528U (en) * 1984-03-13 1985-10-02 三洋電機株式会社 heat exchange unit
JPS61197291U (en) * 1985-05-29 1986-12-09

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182096A (en) * 1984-02-29 1985-09-17 Fujitsu Ltd Semiconductor memory device
JPS62120694A (en) * 1985-11-20 1987-06-01 Mitsubishi Electric Corp Semiconductor memory device
JP2682453B2 (en) * 1994-06-22 1997-11-26 日本電気株式会社 Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148528U (en) * 1984-03-13 1985-10-02 三洋電機株式会社 heat exchange unit
JPS61197291U (en) * 1985-05-29 1986-12-09

Also Published As

Publication number Publication date
JPS5760584A (en) 1982-04-12

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