JPS605519A - Ｘ線露光用マスクおよびその製法 - Google Patents
Ｘ線露光用マスクおよびその製法Info
- Publication number
- JPS605519A JPS605519A JP58112916A JP11291683A JPS605519A JP S605519 A JPS605519 A JP S605519A JP 58112916 A JP58112916 A JP 58112916A JP 11291683 A JP11291683 A JP 11291683A JP S605519 A JPS605519 A JP S605519A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ray
- pattern
- mask
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000010410 layer Substances 0.000 claims abstract description 222
- 238000000034 method Methods 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000002844 melting Methods 0.000 claims abstract description 34
- 230000008018 melting Effects 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000002356 single layer Substances 0.000 claims abstract description 8
- 239000006096 absorbing agent Substances 0.000 claims description 96
- 239000007789 gas Substances 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 45
- 238000000992 sputter etching Methods 0.000 claims description 32
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- 239000010937 tungsten Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005513 bias potential Methods 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000007246 mechanism Effects 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 239000011358 absorbing material Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 37
- 229910052737 gold Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 241000254158 Lampyridae Species 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CCJHDZZUWZIVJF-UHFFFAOYSA-N iodo nitrate Chemical compound [O-][N+](=O)OI CCJHDZZUWZIVJF-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112916A JPS605519A (ja) | 1983-06-24 | 1983-06-24 | Ｘ線露光用マスクおよびその製法 |
| US06/513,954 US4515876A (en) | 1982-07-17 | 1983-07-15 | X-Ray lithography mask and method for fabricating the same |
| FR8311817A FR2542882B1 (fr) | 1982-07-17 | 1983-07-18 | Masque de lithographie a rayons x et procede de fabrication de celui-ci |
| DE19833325832 DE3325832A1 (de) | 1982-07-17 | 1983-07-18 | Roentgenstrahlenlithographie-maske und verfahren zu seiner herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112916A JPS605519A (ja) | 1983-06-24 | 1983-06-24 | Ｘ線露光用マスクおよびその製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605519A true JPS605519A (ja) | 1985-01-12 |
| JPH0458171B2 JPH0458171B2 (enrdf_load_stackoverflow) | 1992-09-16 |
Family
ID=14598694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58112916A Granted JPS605519A (ja) | 1982-07-17 | 1983-06-24 | Ｘ線露光用マスクおよびその製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605519A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140421A (ja) * | 1985-12-14 | 1987-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線露光用マスク及びその製法 |
| JPH01150324A (ja) * | 1987-12-07 | 1989-06-13 | Dainippon Printing Co Ltd | Ｘ線露光用マスクの製造方法 |
| JPH03110821A (ja) * | 1989-09-26 | 1991-05-10 | Toppan Printing Co Ltd | Ｘ線露光用マスク |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5337704A (en) * | 1976-09-20 | 1978-04-07 | Kobe Steel Ltd | Conversion of coal |
| JPS57198461A (en) * | 1981-05-18 | 1982-12-06 | Philips Nv | Radiant lithographic mask and manufacture thereof |
| JPS57208138A (en) * | 1981-06-18 | 1982-12-21 | Toshiba Corp | Manufacture of mask for x-ray exposure |
| JPS5858545A (ja) * | 1981-10-02 | 1983-04-07 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線露光用マスクおよびその製造法 |
-
1983
- 1983-06-24 JP JP58112916A patent/JPS605519A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5337704A (en) * | 1976-09-20 | 1978-04-07 | Kobe Steel Ltd | Conversion of coal |
| JPS57198461A (en) * | 1981-05-18 | 1982-12-06 | Philips Nv | Radiant lithographic mask and manufacture thereof |
| JPS57208138A (en) * | 1981-06-18 | 1982-12-21 | Toshiba Corp | Manufacture of mask for x-ray exposure |
| JPS5858545A (ja) * | 1981-10-02 | 1983-04-07 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線露光用マスクおよびその製造法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140421A (ja) * | 1985-12-14 | 1987-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線露光用マスク及びその製法 |
| JPH01150324A (ja) * | 1987-12-07 | 1989-06-13 | Dainippon Printing Co Ltd | Ｘ線露光用マスクの製造方法 |
| JPH03110821A (ja) * | 1989-09-26 | 1991-05-10 | Toppan Printing Co Ltd | Ｘ線露光用マスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0458171B2 (enrdf_load_stackoverflow) | 1992-09-16 |
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