JPS6051697A - 化合物半導体の製造方法 - Google Patents

化合物半導体の製造方法

Info

Publication number
JPS6051697A
JPS6051697A JP58157625A JP15762583A JPS6051697A JP S6051697 A JPS6051697 A JP S6051697A JP 58157625 A JP58157625 A JP 58157625A JP 15762583 A JP15762583 A JP 15762583A JP S6051697 A JPS6051697 A JP S6051697A
Authority
JP
Japan
Prior art keywords
compound semiconductor
volatile component
crucible
melt
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58157625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6335600B2 (enExample
Inventor
Toshio Sagawa
佐川　敏雄
Masashi Fukumoto
福本　昌志
Tomoki Inada
稲田　知己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP58157625A priority Critical patent/JPS6051697A/ja
Publication of JPS6051697A publication Critical patent/JPS6051697A/ja
Publication of JPS6335600B2 publication Critical patent/JPS6335600B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58157625A 1983-08-29 1983-08-29 化合物半導体の製造方法 Granted JPS6051697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157625A JPS6051697A (ja) 1983-08-29 1983-08-29 化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157625A JPS6051697A (ja) 1983-08-29 1983-08-29 化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS6051697A true JPS6051697A (ja) 1985-03-23
JPS6335600B2 JPS6335600B2 (enExample) 1988-07-15

Family

ID=15653816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157625A Granted JPS6051697A (ja) 1983-08-29 1983-08-29 化合物半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS6051697A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227985A (ja) * 1985-04-02 1986-10-11 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
JPS6230689A (ja) * 1985-08-02 1987-02-09 Mitsubishi Metal Corp ３−５族化合物半導体結晶の成長方法および装置
CN102628180A (zh) * 2012-04-23 2012-08-08 南京金美镓业有限公司 一种高纯度磷化铟多晶棒的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212152A (en) * 1975-07-18 1977-01-29 Idemitsu Kosan Co Ltd Process for alkylation of adamantanes
JPS5988394A (ja) * 1982-11-12 1984-05-22 Agency Of Ind Science & Technol ガリウム砒素単結晶製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212152A (en) * 1975-07-18 1977-01-29 Idemitsu Kosan Co Ltd Process for alkylation of adamantanes
JPS5988394A (ja) * 1982-11-12 1984-05-22 Agency Of Ind Science & Technol ガリウム砒素単結晶製造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227985A (ja) * 1985-04-02 1986-10-11 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
JPS6230689A (ja) * 1985-08-02 1987-02-09 Mitsubishi Metal Corp ３−５族化合物半導体結晶の成長方法および装置
CN102628180A (zh) * 2012-04-23 2012-08-08 南京金美镓业有限公司 一种高纯度磷化铟多晶棒的制备方法

Also Published As

Publication number Publication date
JPS6335600B2 (enExample) 1988-07-15

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