JPS6051697A - 化合物半導体の製造方法 - Google Patents
化合物半導体の製造方法Info
- Publication number
- JPS6051697A JPS6051697A JP15762583A JP15762583A JPS6051697A JP S6051697 A JPS6051697 A JP S6051697A JP 15762583 A JP15762583 A JP 15762583A JP 15762583 A JP15762583 A JP 15762583A JP S6051697 A JPS6051697 A JP S6051697A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- volatile component
- crucible
- melt
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 150000001875 compounds Chemical class 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- -1 InP compound Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical group [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000000565 sealant Substances 0.000 claims 1
- 239000003566 sealing material Substances 0.000 abstract description 5
- 239000011261 inert gas Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15762583A JPS6051697A (ja) | 1983-08-29 | 1983-08-29 | 化合物半導体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15762583A JPS6051697A (ja) | 1983-08-29 | 1983-08-29 | 化合物半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6051697A true JPS6051697A (ja) | 1985-03-23 |
| JPS6335600B2 JPS6335600B2 (enrdf_load_stackoverflow) | 1988-07-15 |
Family
ID=15653816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15762583A Granted JPS6051697A (ja) | 1983-08-29 | 1983-08-29 | 化合物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6051697A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227985A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
| JPS6230689A (ja) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | ３−５族化合物半導体結晶の成長方法および装置 |
| CN102628180A (zh) * | 2012-04-23 | 2012-08-08 | 南京金美镓业有限公司 | 一种高纯度磷化铟多晶棒的制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212152A (en) * | 1975-07-18 | 1977-01-29 | Idemitsu Kosan Co Ltd | Process for alkylation of adamantanes |
| JPS5988394A (ja) * | 1982-11-12 | 1984-05-22 | Agency Of Ind Science & Technol | ガリウム砒素単結晶製造装置 |
-
1983
- 1983-08-29 JP JP15762583A patent/JPS6051697A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212152A (en) * | 1975-07-18 | 1977-01-29 | Idemitsu Kosan Co Ltd | Process for alkylation of adamantanes |
| JPS5988394A (ja) * | 1982-11-12 | 1984-05-22 | Agency Of Ind Science & Technol | ガリウム砒素単結晶製造装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227985A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
| JPS6230689A (ja) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | ３−５族化合物半導体結晶の成長方法および装置 |
| CN102628180A (zh) * | 2012-04-23 | 2012-08-08 | 南京金美镓业有限公司 | 一种高纯度磷化铟多晶棒的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6335600B2 (enrdf_load_stackoverflow) | 1988-07-15 |
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