JPS6050917A - 分子線エピタキシャル装置のウエハ温度制御装置 - Google Patents

分子線エピタキシャル装置のウエハ温度制御装置

Info

Publication number
JPS6050917A
JPS6050917A JP16007383A JP16007383A JPS6050917A JP S6050917 A JPS6050917 A JP S6050917A JP 16007383 A JP16007383 A JP 16007383A JP 16007383 A JP16007383 A JP 16007383A JP S6050917 A JPS6050917 A JP S6050917A
Authority
JP
Japan
Prior art keywords
cylinder
temperature
window
wafer
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16007383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0113214B2 (enrdf_load_stackoverflow
Inventor
Haruo Tanaka
田中 治夫
Yuuji Ishida
祐士 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP16007383A priority Critical patent/JPS6050917A/ja
Publication of JPS6050917A publication Critical patent/JPS6050917A/ja
Publication of JPH0113214B2 publication Critical patent/JPH0113214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP16007383A 1983-08-30 1983-08-30 分子線エピタキシャル装置のウエハ温度制御装置 Granted JPS6050917A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16007383A JPS6050917A (ja) 1983-08-30 1983-08-30 分子線エピタキシャル装置のウエハ温度制御装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16007383A JPS6050917A (ja) 1983-08-30 1983-08-30 分子線エピタキシャル装置のウエハ温度制御装置

Publications (2)

Publication Number Publication Date
JPS6050917A true JPS6050917A (ja) 1985-03-22
JPH0113214B2 JPH0113214B2 (enrdf_load_stackoverflow) 1989-03-03

Family

ID=15707296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16007383A Granted JPS6050917A (ja) 1983-08-30 1983-08-30 分子線エピタキシャル装置のウエハ温度制御装置

Country Status (1)

Country Link
JP (1) JPS6050917A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0113214B2 (enrdf_load_stackoverflow) 1989-03-03

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