JPS6046995A - シリコン・リボン結晶の製造方法 - Google Patents

シリコン・リボン結晶の製造方法

Info

Publication number
JPS6046995A
JPS6046995A JP15264183A JP15264183A JPS6046995A JP S6046995 A JPS6046995 A JP S6046995A JP 15264183 A JP15264183 A JP 15264183A JP 15264183 A JP15264183 A JP 15264183A JP S6046995 A JPS6046995 A JP S6046995A
Authority
JP
Japan
Prior art keywords
silicon
crystal
ribbon crystal
silicon ribbon
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15264183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6111916B2 (enExample
Inventor
Naoaki Maki
真木 直明
Masanaru Abe
阿部 昌匠
Toshiro Matsui
松井 都四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15264183A priority Critical patent/JPS6046995A/ja
Publication of JPS6046995A publication Critical patent/JPS6046995A/ja
Publication of JPS6111916B2 publication Critical patent/JPS6111916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15264183A 1983-08-22 1983-08-22 シリコン・リボン結晶の製造方法 Granted JPS6046995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15264183A JPS6046995A (ja) 1983-08-22 1983-08-22 シリコン・リボン結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15264183A JPS6046995A (ja) 1983-08-22 1983-08-22 シリコン・リボン結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6046995A true JPS6046995A (ja) 1985-03-14
JPS6111916B2 JPS6111916B2 (enExample) 1986-04-05

Family

ID=15544842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15264183A Granted JPS6046995A (ja) 1983-08-22 1983-08-22 シリコン・リボン結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS6046995A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002543037A (ja) * 1999-05-03 2002-12-17 エバーグリーン ソーラー, インコーポレイテッド 結晶成長のための連続的な溶融物補充
JP2012229134A (ja) * 2011-04-25 2012-11-22 Fujikura Ltd 酸化物共晶体の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134085U (enExample) * 1989-04-13 1990-11-07
JPH0319515U (enExample) * 1989-07-10 1991-02-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002543037A (ja) * 1999-05-03 2002-12-17 エバーグリーン ソーラー, インコーポレイテッド 結晶成長のための連続的な溶融物補充
JP2012229134A (ja) * 2011-04-25 2012-11-22 Fujikura Ltd 酸化物共晶体の製造方法

Also Published As

Publication number Publication date
JPS6111916B2 (enExample) 1986-04-05

Similar Documents

Publication Publication Date Title
LaBelle Jr EFG, the invention and application to sapphire growth
US4329195A (en) Lateral pulling growth of crystal ribbons
US5102494A (en) Wet-tip die for EFG cyrstal growth apparatus
EP0368586A1 (en) Apparatus for manufacturing silicon single crystals
JP5618318B2 (ja) 酸化ガリウム単結晶の製造方法及び製造装置
CN104032368A (zh) 一种高效多晶硅锭的制备方法
JPH01148782A (ja) 単結晶引き上げ用石英ルツボ
WO2013007108A1 (zh) 一种生长薄板硅晶体的方法
CN103834994A (zh) 多晶硅锭及其制备方法和多晶硅片
US4873063A (en) Apparatus for zone regrowth of crystal ribbons
JPS6046995A (ja) シリコン・リボン結晶の製造方法
US3977934A (en) Silicon manufacture
EP0400266A1 (en) Apparatus for manufacturing single silicon crystal
WO2022179181A1 (zh) 组合坩埚
JPH01148783A (ja) 単結晶引き上げ用石英ルツボ
JP3668276B2 (ja) 酸化物単結晶の製造方法および装置
JPS6111914B2 (enExample)
JPS59217692A (ja) 薄膜単結晶の製造方法
JP2883910B2 (ja) 単結晶シリコンの製造方法
US8256373B2 (en) Device for depositing a layer of polycrystalline silicon on a support
JPS5932430B2 (ja) 帯状シリコン結晶の製造装置
JPH0259494A (ja) シリコン単結晶の製造方法及び装置
JPH05279189A (ja) ルチル単結晶の育成方法
JPH01286994A (ja) シリコン単結晶の製造方法及び装置
JP2535773B2 (ja) 酸化物単結晶の製造方法とその装置