JPS6043878A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPS6043878A JPS6043878A JP58151520A JP15152083A JPS6043878A JP S6043878 A JPS6043878 A JP S6043878A JP 58151520 A JP58151520 A JP 58151520A JP 15152083 A JP15152083 A JP 15152083A JP S6043878 A JPS6043878 A JP S6043878A
- Authority
- JP
- Japan
- Prior art keywords
- led
- terminal
- light emitting
- layer
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 3
- 239000000956 alloy Substances 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 11
- 238000004891 communication Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241000019008 Hyda Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は内部電流狭さく形の発光ダイオードに係シ、
特に発光素子（ＬＥＤ）の入出力端子構造を改良したも
の。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a light emitting diode with internal current constriction.
In particular, it has an improved input/output terminal structure for light emitting elements (LEDs).
ＬＥＤから発した光を有効に外部に取り出すための工夫
についてはこれまでに多くの発表がなされている。又，
ＬＥＤを駆動した時に一発生する熱の放散に対する工
夫についても種々の事が行なわれている。ところで、近
年ＬＥＤの発光特性は極めて向上し、ＬＥＤの光を利用
して通信を行なうこともさかんに進められてきている。Many publications have been made so far regarding ways to effectively extract light emitted from LEDs to the outside. or,
Various efforts have been made to dissipate the heat generated when an LED is driven. Incidentally, in recent years, the light emitting characteristics of LEDs have improved significantly, and communication using LED light has been actively promoted.
例えばＩ ＥＩＰＪＥ Ｔ ｒ ａ ｎ ｓａｃｔｉｏ
ｎ ｏｎ Ｇ’ｏｍｐｏｎｅｎ’ｔｓ． ＶｏＬ Ｃｌ
｛ＭＴ−３ ＮＯ４ Ｄｅｃ．１９８０。For example, I EIPJE TR an sactio.
n on G'omponen'ts. VoLCl
{MT-3 NO4 Dec. 1980.
Ｐ２Ｓ５に記載があシ、以下にこれを従来例として簡単
に説明する。There is no description in P2S5, and this will be briefly explained below as a conventional example.
第１図は電流狭さく形見光ダイオードの断面図である。FIG. 1 is a cross-sectional view of a current-restricting keepsake photodiode.
第１図において、１１はＬＥＤ，１２は球レンズ１３は
第１の端子，１４は第２の端子％ １５は樹脂．１６は
ケースであり、第１と第２の端子間に約２■の電圧を印
加してＬＥＤＩＩから発光が得られるものである。In FIG. 1, 11 is an LED, 12 is a ball lens 13 is a first terminal, 14 is a second terminal, and 15 is a resin. Reference numeral 16 denotes a case, in which light emission can be obtained from the LED II by applying a voltage of about 2 .mu. between the first and second terminals.
第２図はＬＥＤの拡大断面図である。第２図において２
１は球レンズ、２２は第１の電極、２３はｎ型ＧａＡＡ
Ａｓり２ラド層、２４はＧａＡ／−Ａｓ活性層、２５は
ｐ型ＧａＭＡｓクラッド層、２６はｎ型ＧａＡｓ電流狭
さく層、２７はｐ型ＧａＡｓ基板、２８は第２の電極で
ある。第１と第２の電極間に２■の電圧を印加すると電
流は電流狭さく層２６によって絞られ、 ＬＥＤの中央
部近傍で強い発光が得られる構造と寿っている。ＬＥＤ
に与える電流は１００ｍＡ程度まで必要で、従って電流
集中の起こる部分では発熱はまぬがれ々い。しかしなが
ら従来の電流狭さく形見光ダイオードでは熱放散に対す
る工夫が十分でなく、電流を増加すると発光輝度の飽和
現象が見られ、有効な構造とは云えなかった。FIG. 2 is an enlarged sectional view of the LED. In Figure 2, 2
1 is a ball lens, 22 is a first electrode, 23 is n-type GaAAA
24 is a GaA/-As active layer, 25 is a p-type GaMAs cladding layer, 26 is an n-type GaAs current narrowing layer, 27 is a p-type GaAs substrate, and 28 is a second electrode. When a voltage of 2cm is applied between the first and second electrodes, the current is constricted by the current confining layer 26, resulting in a structure that allows strong light emission near the center of the LED. LED
It is necessary to apply a current of up to about 100 mA, and therefore heat generation can be avoided in areas where current concentration occurs. However, conventional current-limiting memento photodiodes do not have sufficient measures for heat dissipation, and when the current is increased, a saturation phenomenon of luminance is observed, so that the structure cannot be said to be effective.
〔発明の目的つ
この発明はこうした問題点に対してなされたもので、
ＬＥＤの主面及び裏面からの熱放散性を良くし、且つＬ
ＥＤＯ主面から発する光を有効に外部に取シ出す構造の
発光ダイオードを提供することを目的とする。[Purpose of the Invention This invention was made to solve these problems,
Improves heat dissipation from the main and back surfaces of the LED, and
It is an object of the present invention to provide a light emitting diode having a structure that effectively extracts light emitted from the main surface of the EDO to the outside.
この発明の骨子は、 ＬＥＤの主面の一部を光取り出し
用窓として除くその他の全ＬＥＴ、）主面及び裏面をそ
れぞれ第１の端子及び第２の端子と例えば低融点金属で
固着した構造の発光ダイオードである。The gist of this invention is that all other LETs except a part of the main surface of the LED are used as a window for light extraction, a structure in which the main surface and back surface are fixed to a first terminal and a second terminal, respectively, with a low melting point metal. It is a light emitting diode.
この発明によって以下に述べる効果が得られた。 This invention has achieved the following effects.
■まず、熱放牧性がＩ全めて向上したことによって、
ＬＥＤに与える電流に対して発光強度がほぼ比例して増
加した。即ち２００ｍＡ程度の′電流を与えれば１０ｍ
Ｗ程度の極めて強い発光が得られることにな勺、光ファ
イバーを用いた通信用光源として有りｈであった。■Firstly, due to the improved thermal grazing ability,
The light emission intensity increased almost in proportion to the current applied to the LED. In other words, if a current of about 200 mA is applied, the distance will reach 10 m.
It was possible to obtain extremely strong light emission on the order of W, making it useful as a light source for communications using optical fibers.
■次に熱放散性の向上によって、ＬＥＤのイ、１頓性が
向上し、光通信用光源として有効であった。特に、第２
図に示したクラッド層、活性層の１ワさが１、〜数ミク
ロンと薄い場合、 ＬＥＤの主面からの熱放散が支配的
となり極めて有効であったっ〔発明の実施例〕
第３図−〜第６図を参照して本発明の詳細な説明する。②Next, due to improved heat dissipation, the instantaneous performance of LEDs improved, making them effective as light sources for optical communications. Especially the second
When the cladding layer and active layer shown in the figure are thin, with a thickness of 1 to several microns, heat dissipation from the main surface of the LED becomes dominant and is extremely effective. [Embodiment of the invention] Figure 3- The present invention will be described in detail with reference to FIG.
第３図〜第６図は発光ダイオードの断面図を示すもので
特に第３図は斜視断面図で示した。まず第３図において
、 ＬＥＤ３１はＱに述べた第２図の構造であり、次の
ように形成する。ｐ型ＧａＡｓ基板上にｎ型ＱａＡｓ
ｊｑを約２μｍ形成した後ホトエンダレイビングプロセ
ス（ＰＥＰ）によって電流狭さくが可能な形に整形して
電流狭さく層２６を作る。次に電流狭さく層上に順次ｐ
型ＧａＡｌＡｓ層２５ 、ＧａＡ、υＬｓ活性層２４
、 ｎ ｉ５． ＧａＡＡＡｓ 層２３を１〜５μｍの
厚さに制御して構成する。続いて第１及び第２の電極２
２．２８：を形成後、第１の電極を選択的に除いて光の
取シ出し窓を作る。この光取シ出し窓は電流狭さく層２
６のない部分に位置合わせして作ることが重要である。3 to 6 show cross-sectional views of the light emitting diode, and in particular, FIG. 3 is a perspective cross-sectional view. First, in FIG. 3, the LED 31 has the structure shown in FIG. 2 described in Q, and is formed as follows. n-type QaAs on p-type GaAs substrate
After forming jq to a thickness of about 2 μm, the current confining layer 26 is formed by shaping the current confining layer 26 by a photoenderving process (PEP). Next, p
type GaAlAs layer 25 , GaA, υLs active layer 24
, n i5. The GaAAAs layer 23 is controlled to have a thickness of 1 to 5 μm. Next, the first and second electrodes 2
2.28: After forming, the first electrode is selectively removed to create a light extraction window. This light extraction window is the current constriction layer 2.
It is important to align it with the part without 6.
次に第１の′電極及び第２の電１板上に、Ｉｎ 、 Ｓ
ｎ等の低融点金属３２あるいはＡｕ −８ｎ 、ＡｕＳ
ｉ 、 Ｉｎ−Ｇａ 、 ハｙダ等の低融点合金を真空
蒸着あるいはメッキ等によって被着する。次にＬＥＤ
ｋ ０．５＋ａｍ四方程度に切断してＬＥＤを完成する
。次に第１の端子３３及び第２の端子３４を準備する。Next, on the first electrode and the second electrode, In, S
Low melting point metal 32 such as n or Au-8n, AuS
A low melting point alloy such as In-Ga, Hyda, etc. is deposited by vacuum evaporation or plating. Next, the LED
Cut into approximately k 0.5+am square pieces to complete the LED. Next, the first terminal 33 and the second terminal 34 are prepared.
第１の端子には一部に光の取シ出し用穴３５をあらかじ
め設けておく。穴の大きさは、発光ダイオードの使用目
的に応じて各種あり、光通信に用いる光フアイバー径の
サイズ程度が使用上有効である。第２の端子は第１の端
子の内部あるいは下部に納まるように設計製造する。第
１の端子及び第２の端子はＬＥＤの熱放散を目的として
いることから、端子の体積は大きい程有効であるが加工
性との兼ねあいづ形状が決定づけられる。A hole 35 for light extraction is previously provided in a part of the first terminal. The size of the hole varies depending on the purpose of use of the light emitting diode, and the size of the diameter of the optical fiber used for optical communication is effective for use. The second terminal is designed and manufactured to fit inside or below the first terminal. Since the purpose of the first terminal and the second terminal is to dissipate heat from the LED, the larger the volume of the terminal, the more effective it is, but the shape is determined in consideration of workability.
次に、第１及び第２の端子とＬＥＤの第１及び第２の電
極ゑ低融点金萬で固着する方法を以下・に述べる。まず
、第１の端子の光取り出し用穴３５とＬＥＤの光取り出
し用窓３６との位置合わせをさかさまの状態で行ない、
ＬＥＤを狭むように第１の端子と第２の端子とで固定す
る。次にこれを水素ガス中あるいは不活性ガス中で低融
点金属がＬＥＤと端子とを固着する温度例えば１５０℃
〜５５σＣＫＪ％、、Ｎし、冷却する。次に第１の端子
と第２の端子とを絶縁して固定するためのエポキシ樹脂
３７を第１の端子内に設けて発光タイオードを完成する
。そして、第１の端子の光取シ出し用穴の内部にガラス
球しン、＜３８ｆ：シリコーンゴムで取シ付けることに
よってＬＥＤから発した光は指向性が鋭くなシ、光ファ
イバーとの結合性が良く々るものである。なお、第１の
端子の一部にねじを設けておくことにょ垢外部ソケット
等との密着度が良く、さらに熱放散性が向上するもので
ある。Next, a method of fixing the first and second terminals and the first and second electrodes of the LED with low melting point metal will be described below. First, align the light extraction hole 35 of the first terminal with the light extraction window 36 of the LED in an upside down state,
The LED is fixed between the first terminal and the second terminal so as to be narrowed. Next, this is heated in hydrogen gas or inert gas at a temperature such as 150°C, at which the low melting point metal bonds the LED and the terminal.
~55σCKJ%, N and cool. Next, an epoxy resin 37 for insulating and fixing the first terminal and the second terminal is provided inside the first terminal to complete the light emitting diode. By attaching a glass bulb inside the light extraction hole of the first terminal with <38F: silicone rubber, the light emitted from the LED has sharp directionality, and the coupling with the optical fiber is improved. It is a good thing. In addition, by providing a screw in a part of the first terminal, the degree of adhesion with an external socket or the like is improved, and heat dissipation is further improved.
次に本発明の変形例を第４図〜第６図を参照して説明す
る。第４図は第１の端子光取り出し穴４１にテーパを設
け、さらに、第１及び第２の端子の体積を相対的に増し
たものである。この場合、熱放散性はさらに向上し、光
ファイバーとの結合性も良くなる利点があった。第５図
は第１の端子の光取り出し穴５１の側面を反射体として
、球レンズ５２を穴５１の上部にはするように構成した
ものである。この場合ＬＥＤから発した光の大部分は球
レンズを通過し高出力の発光が得られる効果があった。Next, a modification of the present invention will be explained with reference to FIGS. 4 to 6. In FIG. 4, the first terminal light extraction hole 41 is tapered, and the volumes of the first and second terminals are relatively increased. In this case, there was an advantage that the heat dissipation property was further improved and the coupling property with the optical fiber was also improved. In FIG. 5, the side surface of the light extraction hole 51 of the first terminal is used as a reflector, and a ball lens 52 is placed above the hole 51. In this case, most of the light emitted from the LED passed through the ball lens, resulting in the effect of obtaining high-output light emission.
第６図はリードフレーム６１ 、６２を用いて発光ダイ
オードを構成したもので、あらかじめＬＥＤを挟持する
ように第１の端子と第２の端子を用意し、挟持した状態
でＬＥＤを固着し、その後で樹脂６３をモールドしたも
のである。この場合、製造工程は簡便となシ、又材料費
も低廉化できる利点があった。Figure 6 shows a light emitting diode constructed using lead frames 61 and 62. First and second terminals are prepared in advance so as to sandwich the LED, and the LED is fixed in the sandwiched state. It is molded with resin 63. In this case, the manufacturing process was simple and the material costs were low.
第１図は従来の発光ダイオードの断面図、第２図は電流
狭さく型ＬＥＤの断面図、第３図は本発明の一実施例を
説明するための斜視断面図、第４図〜第６図は変形例を
説明するための断面図である。
３１ ・・電流狭さく型ＬＥＱ ３５，４１．５１ ・
・光取り出し穴、３２・・低融点金属、３６・・・光取
り出し窓、３３．６１・・第１の端子、３７９１．樹脂
３４．６２・・第２の端子、
代理人 弁理士 則近 意佑（ほか１名）第 ６ 図Fig. 1 is a sectional view of a conventional light emitting diode, Fig. 2 is a sectional view of a current confinement type LED, Fig. 3 is a perspective sectional view for explaining an embodiment of the present invention, and Figs. 4 to 6. FIG. 3 is a cross-sectional view for explaining a modification. 31 ・Current constriction type LEQ 35,41.51 ・
-Light extraction hole, 32...Low melting point metal, 36...Light extraction window, 33.61...First terminal, 3791. Resin 34.62...Second terminal, Agent Patent attorney Isuke Norichika (and one other person) Figure 6
Claims (3)
的な発光部ｋ ＊４成する電流狭さく形見光素子を用い
た発光ダイオードにおいて、前記発光素子の主面の一部
に有する前記発光部を除いて形成した第１の電極を［Ｙ
うように接続をなす第１の端子と、前記発光素子の裏面
に形成した第２の電極と接続ををなす第２の端子と１、
第１０婦子と第２の端子と発光素子とを固定する樹脂と
を具備したことを特徴とする発光ダイオード。(1) In a light emitting diode using a current confinement optical element in which a current confinement layer is formed in a part of a semiconductor element to form a concentrated light emitting part k*4, the The first electrode formed excluding the light emitting part is [Y
a first terminal connected to the light emitting element; a second terminal connected to the second electrode formed on the back surface of the light emitting element;
A light emitting diode comprising a tenth terminal, a second terminal, and a resin for fixing a light emitting element.
び第２の端子との接続を低融点金属もしくは低融点合金
で！ｉ！！１着したことを特徴とする特許請求の範囲第
１項記載の発光ダイオード。(2) The first and second electrodes of the light emitting element and the first and second terminals are connected using a low melting point metal or a low melting point alloy! i! ! The light emitting diode according to claim 1, characterized in that the light emitting diode is in first place.
形レンズを具備したことを特徴とする前記特許Ｍ請求の
範囲第１項記載の発光ダイオード。(3) The light emitting diode according to claim 1 of the above Patent M, characterized in that a spherical lens is provided in a hole provided on the light emitting portion and in the terminal of the cell 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151520A JPS6043878A (en) | 1983-08-22 | 1983-08-22 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151520A JPS6043878A (en) | 1983-08-22 | 1983-08-22 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6043878A true JPS6043878A (en) | 1985-03-08 |
Family
ID=15520307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151520A Pending JPS6043878A (en) | 1983-08-22 | 1983-08-22 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043878A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7452113B2 (en) * | 2004-03-09 | 2008-11-18 | Gentex Corporation | Optics for controlling the direction of light rays and assemblies incorporating the optics |
| US11999001B2 (en) | 2012-12-03 | 2024-06-04 | Adeia Semiconductor Technologies Llc | Advanced device assembly structures and methods |
-
1983
- 1983-08-22 JP JP58151520A patent/JPS6043878A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7452113B2 (en) * | 2004-03-09 | 2008-11-18 | Gentex Corporation | Optics for controlling the direction of light rays and assemblies incorporating the optics |
| US11999001B2 (en) | 2012-12-03 | 2024-06-04 | Adeia Semiconductor Technologies Llc | Advanced device assembly structures and methods |
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