JP2001318279A - Package for semiconductor laser module, and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To decrease changes in the optical characteristics of the semiconductor laser module owing to changes in the ambient temperature. By improving the airtightness of a package for a semiconductor laser module. SOLUTION: A bottom plate 16 and a frame 11, constituting the package for a semiconductor laser module, are made of a copper-tungsten alloy or a copper-molybdenum ally. The surface of these parts are subjected to electroless nickel plating and then jointed by using a brazing material or through direct heating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a high-power semiconductor laser module which is a coupler between an optical fiber and a high-power semiconductor laser device used in an optical communication device or the like.

[0002]

2. Description of the Related Art In recent years, optical amplifiers for directly amplifying optical signals have been developed. In particular, optical amplifiers using erbium optical fibers have attracted attention. This optical amplifier is based on the principle that when laser light is injected into an optical fiber doped with an erbium element, signal light is amplified, and the degree of amplification depends on the output power of the injected laser light. As a laser light source of such an optical amplifier, a semiconductor laser element is used,
The semiconductor laser element and the lens are integrally accommodated in a package to form a semiconductor laser module, and the semiconductor laser module is connected to an optical fiber.

[0003] In such a semiconductor laser module, a semiconductor laser element used as a laser light source includes:
Since a very high output is required and a driving current of several hundred mA is required, there is a possibility that the heat output of the semiconductor laser device causes a decrease in optical output and a shortened life. In addition, since the semiconductor laser element changes its optical characteristics such as a change in wavelength when its ambient temperature changes, a Peltier element is provided in the structure of the semiconductor laser module that is coupled to the optical fiber, and the semiconductor laser element is cooled and used. I am trying to do it.

[0004] Such a semiconductor laser module is, for example, a butterfly type or a D type having a lead wire provided on a pair of side walls (not shown) with a hermetic seal as shown in FIG.
A metal package body (frame) 61 constituting an IP type package is provided, and a light extraction window 62 a is provided on one side wall 62 of the frame 61. Further, a metal bottom plate 70 is fixed to the lower portion of the frame body 61 at the lower portion of the frame body 61 by brazing, and an airtight cover 6 is provided on the upper portion of the frame body 61.
3 is attached. Here, in the frame 61, a Peltier device 72 composed of a plurality of P-type semiconductor compound elements and an N-type semiconductor compound element is sandwiched between a pair of insulating plates 71a and 71b, and a plurality of P-type The P-type element and the plurality of N-type elements are electrically connected in series in the order of P, N, P, N, and further, lead wires (not shown) are respectively connected to the electrodes to which the P-type element and the N-type element at the end are joined. Connected and configured.

The insulating plates 71a and 71b are formed of alumina or the like, and a metal conductor pattern (electrode pattern) which also serves as an electrode of the Peltier element 72 is formed as a thin film or a thick film thereon. On the insulating plate 71a side, a base plate 73 on which a semiconductor laser element 74, a lens 78, a light receiving element 77 and the like are mounted is fixed, and the insulating plate 71b is fixed on the upper surface of the bottom plate 70. Semiconductor laser element 74
Is mounted on a heat sink 75, which dissipates heat from the semiconductor laser element 74,
A material (for example, diamond, SiC, silicon, etc.) having substantially the same coefficient of thermal expansion as the semiconductor laser element 74 is used to prevent failure due to thermal stress.

The heat sink 75 is mounted on a header 76, which has terminals for electrodes of the semiconductor laser element 74. A light receiving element 77 for monitoring is provided at the rear of the header 76. The light receiving element 77 monitors a change in optical output due to a temperature change of the semiconductor laser element 74 and the like so that the optical output is always constant. Feedback is being applied to the drive circuit. The lens 78 is fixed by a lens holder 79.

The lens holder 79 adjusts the optical axis so that the spread laser light emitted from the semiconductor laser element 74 becomes parallel light by the lens 78, and then the YA is attached to the base 73.
It is fixed with a G laser. Thereby, the laser light emitted from the semiconductor laser element 74 is converted into parallel light by the lens 78, and the parallel light passes through the light extraction window 62a.

A sleeve 82 is disposed in front of the lens 78, and a lens 81 is fixed to the sleeve 82 via a ferrule 83. Here, after adjusting the optical axis so that the laser light emitted from the semiconductor laser element 74 and passing through the light extraction window 62a is efficiently incident on the optical fiber 84 by the lens 81, YAG laser welding is performed on the A and B portions of the sleeve 82. It is fixed with. Thus, the light emitted from the semiconductor laser element 74 is efficiently coupled to the optical fiber 84 by the lenses 78 and 81. Such a semiconductor laser module can output high power because the Peltier element 72 constantly cools the semiconductor laser element 74 to reduce heat generation of the semiconductor laser element 74. Heat generated by the semiconductor laser element 74 and the Peltier element 72 is radiated to the outside by a heat sink (not shown) attached to the lower surface of the bottom plate 70.

In the package of the semiconductor laser module having the above configuration, the metal frame 60 is made of an iron-nickel-cobalt alloy (hereinafter abbreviated as Kovar).
It has a role as a base for storing internal components and joining terminals and optical fibers. Further, the metal bottom plate 70 has a function of efficiently radiating heat generated inside to the outside. This function is extremely important because the characteristics of the semiconductor laser element 74 to be mounted maintain the temperature dependence, and it is necessary to maintain the semiconductor laser element 74 at a constant temperature.
It is made of a copper-tungsten material having good heat dissipation (thermal conductivity).

The semiconductor laser module package 60 as described above is formed on a frame 61 and a bottom plate 70 in advance, and the frame 61 and the bottom plate 70 are integrated by brazing with a brazing material. You. However, the airtightness of the package is not enough just by brazing the parts, and as a result, moisture enters the package and dew condensation occurs,
There are problems such as deterioration of the semiconductor laser element 74 and deterioration of the characteristics of the Peltier element 72.

[0011]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the hermeticity of a package for a semiconductor laser module and to reduce a change in optical characteristics due to a change in an ambient temperature of the semiconductor laser module.

[0012]

According to a first aspect of the present invention, there is provided a package for a semiconductor laser module, comprising: a bottom plate on which a semiconductor laser element is mounted; and a frame joined to the bottom plate. Wherein the bottom plate and the frame are made of a material consisting of copper and tungsten or copper and molybdenum, and the surface of the bottom plate and / or the frame is plated with electroless nickel. The bottom plate and the frame are integrally formed using a brazing material, either directly or via a seal ring. Further, in the package for a semiconductor laser module according to claim 2 of the present invention, the electroless nickel plating is performed by electroless nickel-phosphorus plating, electroless nickel-boron plating, or electroless nickel plating and electrolytic copper plating or electroless plating. It is one of mixed plating of copper plating. In the package for a semiconductor laser module according to a third aspect of the present invention, the bottom plate and / or the frame are formed by an infiltration method or a metal powder injection molding. Also, claim 4 of the present invention
The method for manufacturing a package for a semiconductor laser module according to the present invention is a method for manufacturing a package for a semiconductor laser module including a bottom plate on which a semiconductor laser element is mounted via a cooling element and a frame joined to the bottom plate. After forming copper powder and tungsten powder or copper powder and molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration method or metal powder injection molding, a bottom plate forming step of sintering the formed body and frame forming A plating step of performing electroless nickel plating on the surface of the bottom plate and / or the frame, and brazing the bottom plate formed in the bottom plate forming step and the frame formed in the frame forming step. ,
And a fixing step of integrally joining them directly or via a seal ring. Also, claim 5 of the present invention
The method for manufacturing a package for a semiconductor laser module according to the present invention is a method for manufacturing a package for a semiconductor laser module including a bottom plate on which a semiconductor laser element is mounted via a cooling element and a frame joined to the bottom plate. After forming copper powder and tungsten powder or copper powder and molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration method or metal powder injection molding, a bottom plate forming step of sintering the formed body and frame forming A step of plating the surface of the bottom plate and / or the frame by electroless nickel plating, and brazing the bottom plate and the frame formed by the bottom plate and the frame forming process directly or through a seal ring. And a step of brazing a member comprising a ceramic terminal and a lead wire to the frame body. It is. And claim 6 of the present invention
The method for manufacturing a package for a semiconductor laser module according to the present invention is a method for manufacturing a package for a semiconductor laser module comprising a bottom plate on which a semiconductor laser element is mounted and a frame joined to the bottom plate, comprising copper powder and tungsten powder. Alternatively, after forming copper powder and molybdenum powder into a predetermined bottom plate shape by infiltration method or metal powder injection molding, a bottom plate forming step of sintering the formed body, and mixing of iron-nickel-cobalt alloy powder with a binder added thereto After molding the material into a predetermined frame shape by metal powder injection molding, a frame forming step of sintering the formed body, a plating step of applying electroless nickel plating to the bottom plate surface, and brazing a lead wire to the bottom plate. Attaching the bottom plate formed in the bottom plate forming step and the frame formed in the frame forming step directly by brazing. Through the seal ring is one that includes a fixing step of integrally bonded.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
1 and 2 are views showing a butterfly type package of a semiconductor laser module package according to the present invention. Semiconductor laser module package 10 of this example
Has a notch 12 formed at a pair of upper ends of a frame 11 made of a copper-tungsten alloy, and a light extraction window 14 formed at one of the other side walls. A ridge-shaped projection 15 is formed on the peripheral edge at the lower end. The protrusions 15 are formed in the grooves 1 formed in the bottom plate 16.
7. At both ends of the bottom plate 16, mounting portions 18, 18 are formed, respectively.
These are formed with screw holes 19,19.

On the surfaces of the ridge-shaped protrusions 15 and the grooves 17,
Electroless nickel plating is applied, and after fitting the protrusion 15 to the groove 17, the fitting portion is brazed with a brazing material. The notch 12 is also electrolessly nickel-plated, and a ceramic terminal 21 in which a lead wire 20 made of Kovar is brazed with silver wax is brazed to the notch 12 with silver wax. Then
A ring 22 made of Kovar and an airtight cover 23 are brazed to form a butterfly-type semiconductor laser module package 10.

The frame 11 and the bottom plate 16 made of a copper-tungsten alloy are formed by the following method. First, 20 parts by weight of a spherical copper powder having a particle size of 25 μm or less (average particle size of 5 μm) and a particle size of 25 μm or less (average particle size of 5 μm)
45 parts by volume of a binder is added to the mixed powder of 80 parts by weight of the spherical tungsten powder described above, and the mixture is kneaded at 165 ° C. for 1 hour using a pressure kneader to obtain a molding composition. The binder component is prepared by appropriately adding polystyrene, an acrylic resin, APP, polypropylene, polyacetal, paraffin wax and the like, and the lubricant is appropriately added with stearic acid. Next, the molding composition was pelletized at a die temperature of 150 ° C.
After injection molding at 40 ° C. and a mold temperature of 40 ° C., a green body is formed.

Next, the green body is placed in an atmosphere in which nitrogen is flowing at a rate of 1 l / min, and under a pressure of 1 atm (normal pressure) at a rate of temperature increase of 0.5 ° C./min.
Heat to ° C. to remove the binder to give a brown body.
The brown body is placed in a sintering furnace, heated at a heating rate of 5 ° C./min to 1200 to 1500 ° C., and then sintered at this temperature for 2 hours to obtain a sintered body. The atmosphere at this time is an argon-hydrogen atmosphere with a hydrogen concentration of 0.1 to 100% by volume and sintering while flowing this mixed gas at 1 l / min.

Next, the frame 11 formed as described above is used.
Notch 12, protrusion 15, groove 17 of bottom plate 16
Then, a pretreatment for performing electroless plating is performed. The method of the pretreatment includes degreasing with a solvent, washing, or helium reduction treatment on the surface to be plated.

Next, the notched portion 1 which has been subjected to the pre-processing
2. Electroless nickel plating is applied to the protrusion 15 and the groove 17. The electroless nickel plating used in this example is electroless nickel-phosphorus plating, electroless nickel-boron plating, or a mixed plating of electroless nickel plating and electrolytic copper plating or electroless copper plating, and the plating thickness is , 0.5 to 3 μm is preferred. Plating thickness is 0.5
If the thickness is less than μm, the plating will form a solid solution in the copper-tungsten alloy upon heat treatment, and the brazing material will not adhere during brazing. On the other hand, if it exceeds 3 μm, the thermal expansion of the plating increases, and the airtightness of the joint decreases.

Here, an example of the composition of the plating bath used in the plating method is shown below. The composition of the electroless nickel-phosphorus plating is as follows: phosphorus content: 3 to 15% by weight, nickel sulfate, sodium hypophosphite and sodium citrate;
It is composed of sodium acetate, ammonium chloride and the like. The composition of the electroless nickel-boron plating includes a boron content of 3 to 15% by weight, nickel chloride, a boron hydroxide compound (sodium borohydride, diethylamine borane, diethylborazane, etc.), a pH adjuster (sodium hydroxide, ammonia Water), complexing agent (ethylenediamine,
Citric acid, tartaric acid, and the like to prevent white precipitation of nickel hydroxide). The plating method used for the semiconductor laser module package of the present invention may be a sputtering method. Further, the surface 13 where the ring 22 and the airtight cover 23 are joined to the frame 11 may be plated.

The ring 22 made of Kovar and the airtight cover 23 are formed by the following method. Ring 22
Is formed by punching or cutting Kovar, and the airtight cover 23 is formed by squeezing or cutting.

Next, an airtightness test was performed on the butterfly type semiconductor laser module package 10 manufactured as described above. The airtightness test will be described with reference to FIG. A through hole 52 is provided in a wall 51 separating the two chambers of the airtightness test chamber 50. Semiconductor laser module package 10 for measuring airtightness
Is placed in the through hole 52 so as to be sealed via an O-ring 53, and the chamber 54 is once evacuated. Helium was introduced into the chamber 55, and the amount of helium leaked into the chamber 54 was measured. Table 1 shows the results.

FIG. 3 shows another example of a package for a semiconductor laser module. Package 3 of this type
0 and a butterfly type package 10 shown in FIGS.
Is that the bottom plate 35 is provided with an unformed portion 36. The unformed portion 36 is formed by a core method, and has a function of placing a Peltier element on this portion and efficiently radiating heat generated inside to the outside. The core 39 fitted into the unformed portion 36 is formed by metal powder injection molding and sintering, like the frame 11 and the bottom plate 16 of the butterfly package 10 described above.

The frame 31 and the bottom plate 35 of the package of this example
Is formed in the same manner as in the previous example. Then, plating is performed on the surface of the joint between the frame body 31 and the bottom plate 35, the notch 32, the side wall of the unformed portion 36 of the bottom plate 35, and the portion where the core 39 is joined to the side wall of the unformed portion 36. Preprocessing is performed. Next, electroless nickel plating is applied to the pre-processed portion, an airtight cover is provided, and each joint is brazed with a brazing material to produce a semiconductor laser module package 30.

Next, an airtightness test was performed on the semiconductor laser module package 30 manufactured as described above. The airtightness test was performed by the method shown in FIG. 6 similarly to the butterfly type. Table 1 shows the results.

4 and 5 show a stem type semiconductor laser module package. Stem 41
Is equivalent to a butterfly-type bottom plate, and is formed by metal powder injection molding and sintering, like the frame 11 and the bottom plate 16 of the butterfly-type package.

Next, the stem 41 is washed with an acid or the like in order to perform a pretreatment for plating. Then stem 4
1 is subjected to a heat treatment to form a copper-rich layer on the surface of the stem 41, and electrolytic nickel plating is performed to a plating thickness of 1 to 2 μm.
Apply so that Further, a heat treatment is performed to diffuse nickel into the copper-tungsten alloy of the stem 41. At this time, if there is a plating defect, plating swelling or the like occurs. Next, the lead wire 42 is formed by a hermetic seal, the ground wire 43 is formed by a silver wax, and the stem 41 is formed.
Fixed to. Further, the semiconductor laser element 44 and the light receiving element 45 are soldered with gold-tin solder. And FIG.
As shown in the figure, a seam ring 46 made of Kovar is
The stem 41 is brazed with silver wax. Then, the cap 47 made of Kovar is welded by resistance welding to produce a stem type semiconductor laser module package 40.

Next, an air tightness test was performed on the stem type semiconductor laser module package manufactured as described above. The airtightness test was performed by the method shown in FIG. 6 similarly to the butterfly type. Table 1 shows the results.

[0028]

[Table 1]

From the results shown in Table 1, the semiconductor laser module packages 10, 30, and 40 were subjected to electroless nickel plating on their brazed portions, so that the amount of helium leaking out in the airtightness test was 10 ^-8. atm · cc /
It was confirmed to be less than a second.

As described above, the following effects can be obtained in the semiconductor laser module package of this embodiment. After electroless nickel plating is applied to the surface of the brazing portion of each member constituting the package for the semiconductor laser module, and then brazing is performed, a package with good airtightness can be obtained. Therefore, the semiconductor laser modules mounted in these packages are:
Optical characteristics do not deteriorate due to changes in the ambient temperature.

[0031]

As described above, the package for a semiconductor laser module according to the present invention is a package for a semiconductor laser module comprising a bottom plate on which a semiconductor laser element is mounted and a frame joined to the bottom plate. The bottom plate and the frame are made of a material made of copper and tungsten or copper and molybdenum; the surface of the bottom plate and / or the frame is plated with electroless nickel; and the bottom plate and the frame are made of a brazing material. Therefore, since it is formed integrally directly or via a seal ring, a package for a semiconductor laser module which is easy to manufacture and inexpensive can be obtained.

The package for a semiconductor laser module according to the present invention is characterized in that the electroless nickel plating is formed by electroless nickel-phosphorus plating, electroless nickel-boron plating, electroless nickel plating and electrolytic copper plating or electroless copper plating. Since it is one of the mixed plating, the adhesion of the brazing material used for joining the members is improved.

In the package for a semiconductor laser module according to the present invention, since the bottom plate and / or the frame is formed by infiltration or metal powder injection molding, it is easy to manufacture these molded products. Become.

The method of manufacturing a semiconductor laser module package according to the present invention is directed to a semiconductor laser module package comprising a bottom plate on which a semiconductor laser element is mounted via a cooling element, and a frame joined to the bottom plate. A manufacturing method, after forming a copper powder and a tungsten powder or a copper powder and a molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration method or metal powder injection molding,
A bottom plate forming step and a frame forming step of sintering the formed body, a plating step of applying electroless nickel plating to the surface of the bottom plate and / or the frame, a bottom plate formed by the bottom plate forming step, and a frame forming step And a fixing step of integrally joining the frame formed by the method directly or through a seal ring by brazing, so that a semiconductor laser module package having good airtightness can be obtained.

The method of manufacturing a semiconductor laser module package according to the present invention is directed to a semiconductor laser module package comprising a bottom plate on which a semiconductor laser element is mounted via a cooling element, and a frame joined to the bottom plate. A manufacturing method, after forming a copper powder and a tungsten powder or a copper powder and a molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration method or metal powder injection molding,
A bottom plate forming step and a frame forming step of sintering the formed body, a plating step of subjecting the surface of the bottom plate and / or the frame to electroless nickel plating, and a bottom plate and a frame formed by the bottom plate and the frame forming step And a bonding step of integrally joining, directly or via a seal ring, by brazing,
A step of brazing a member comprising a ceramic terminal and a lead wire to the frame body, so that the lead wire can be easily brazed and the semiconductor laser module package can maintain good airtightness. it can.

The method of manufacturing a semiconductor laser module package according to the present invention is a method of manufacturing a semiconductor laser module package including a bottom plate on which a semiconductor laser element is mounted and a frame joined to the bottom plate. After forming copper powder and tungsten powder or copper powder and molybdenum powder into a predetermined bottom plate shape by infiltration or metal powder injection molding, a bottom plate forming step of sintering the formed body;
After forming a mixed material obtained by adding a binder to iron-nickel-cobalt alloy powder into a predetermined frame shape by metal powder injection molding, a frame forming step of sintering the formed body, and electroless nickel plating on the bottom plate surface Plating step, a step of brazing a lead wire to the bottom plate, a bottom plate formed by the bottom plate forming step, and a frame formed by the frame forming step by brazing, directly or through a seal ring. Since it is provided with the fixing step of integrally joining, the adhesion between the frame and the bottom plate made of different materials is improved, and a semiconductor laser module package with high airtightness can be obtained.

[Brief description of the drawings]

FIG. 1 is a view showing an example of a package for a semiconductor laser module of the present invention.

FIG. 2 is a view showing an example of a package for a semiconductor laser module of the present invention.

FIG. 3 is a view showing another example of the semiconductor laser module package of the present invention.

FIG. 4 is a view showing another example of the semiconductor laser module package of the present invention.

FIG. 5 is a view showing another example of the semiconductor laser module package of the present invention.

FIG. 6 is a schematic diagram showing an airtightness test of a package for a semiconductor laser module of the present invention.

FIG. 7 is a cross-sectional view showing a conventional semiconductor laser module package.

[Explanation of symbols]

11, 31 ... frame, 12, 32 ... notch, 14,
33 ... light extraction window, 15 ... projection, 16, 35 ... bottom plate, 17 ... groove, 20, 42 ... lead wire, 21 ... ceramic terminal, 22 ... ring 23, airtight cover, 36, unformed part, 39, core, 41, stem, 43, ground wire, 44, semiconductor laser element, 45
... Light receiving element, 46 ... Seam ring, 47 ... Cap, 52 ... Through hole, 53 ... O-ring

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Katsuhiko Kosugi Inventor F-term (reference) 2H037 AA01 BA03 DA03 DA04 DA05 DA06 DA16 DA36 DA38 5F073 BA01 FA15 FA22 FA25 FA29

Claims (6)

[Claims] 1. A semiconductor laser module package comprising a bottom plate on which a semiconductor laser element is mounted and a frame joined to the bottom plate, wherein the bottom plate and the frame are made of copper and tungsten or copper and molybdenum. The bottom plate and / or the surface of the frame are electrolessly nickel-plated, and the bottom plate and the frame are integrally formed using a brazing material, either directly or via a seal ring. A package for a semiconductor laser module, comprising: 2. The method according to claim 1, wherein the electroless nickel plating is “electroless nickel-phosphorous plating”, “electroless nickel-boron plating”, or “mixed plating of electroless nickel plating and electrolytic copper plating or electroless copper plating”. 2. The package for a semiconductor laser module according to claim 1, wherein the package is any one of the above. 3. The semiconductor laser module package according to claim 1, wherein said bottom plate and / or frame is formed by infiltration or metal powder injection molding. 4. A method of manufacturing a semiconductor laser module package comprising a bottom plate on which a semiconductor laser element is mounted via a cooling element, and a frame joined to the bottom plate, wherein copper powder and tungsten powder or After forming the copper powder and the molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration or metal powder injection molding, a bottom plate forming step and a frame forming step of sintering the formed body; and A plating step of applying electroless nickel plating to the surface of the frame, and a bottom plate formed in the bottom plate forming step and a frame formed in the frame forming step, which are directly or sealed by brazing. And a fixing step of integrally joining the semiconductor laser module and the semiconductor laser module package. 5. A method for manufacturing a package for a semiconductor laser module, comprising: a bottom plate on which a semiconductor laser element is mounted via a cooling element; and a frame joined to the bottom plate, wherein copper powder and tungsten powder or After forming the copper powder and the molybdenum powder into a predetermined bottom plate shape and a predetermined frame shape by infiltration or metal powder injection molding, a bottom plate forming step and a frame forming step of sintering the formed body; and And / or a plating step in which the surface of the frame body is subjected to electroless nickel plating; and the bottom plate and the frame formed in the frame body forming step and the frame body are integrally joined by brazing, directly or via a seal ring. And a step of brazing a member consisting of a ceramic terminal and a lead wire to the frame body. Method of manufacturing a package. 6. A method for manufacturing a package for a semiconductor laser module, comprising a bottom plate on which a semiconductor laser element is mounted and a frame joined to the bottom plate, comprising copper powder and tungsten powder, or copper powder and molybdenum powder. Forming a bottom plate shape by infiltration or metal powder injection molding and then sintering the formed body; metal powder injection molding of a mixed material obtained by adding a binder to iron-nickel-cobalt alloy powder After molding into a predetermined frame shape, a frame molding step of sintering the molded body, a plating step of applying electroless nickel plating to the bottom plate surface, and a step of brazing a lead wire to the bottom plate, The bottom plate formed in the bottom plate forming step and the frame formed in the frame forming step are integrally joined by brazing, directly or via a seal ring. Method of manufacturing a package for a semiconductor laser module is characterized in that a fixing step that.