CN219144707U - Semiconductor laser assembly - Google Patents
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- CN219144707U CN219144707U CN202320104844.5U CN202320104844U CN219144707U CN 219144707 U CN219144707 U CN 219144707U CN 202320104844 U CN202320104844 U CN 202320104844U CN 219144707 U CN219144707 U CN 219144707U
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Abstract
The utility model provides a semiconductor laser component, which comprises a laser chip, an electrode, a heat sink, a cathode, a gold wire connected with the laser chip and the cathode, a SAC array lens, a crescent lens, an array lens and a shell, wherein the SAC array lens, the crescent lens, the array lens and the shell are sequentially arranged at the front ends of the laser chip, the electrode and the heat sink; the crescent lens is concave on the surface opposite to the SAC array lens, and convex on the surface opposite to the array lens, and the front end of the shell is provided with an installation hole of the array lens; laser output by the laser chip is output to the crescent lens for fast axis collimation after being subjected to slow axis collimation by the SAC array lens, and then lattice laser output is formed by the array lens. According to the utility model, the SAC array lens, the crescent lens and the array lens are combined and applied, so that the energy of each point of the lattice laser emitted by the laser is uniform, and the uniformity of the output of the laser is greatly improved; the laser component has the advantages of simple preparation process, good welding effect, low thermal resistance of the laser module, good heat dissipation performance of products and easy mass production.
Description
Technical Field
The utility model relates to the technical field of lasers, in particular to a semiconductor laser component.
Background
The semiconductor laser has the advantages of small volume, light weight, high reliability, long service life and low power consumption, and is widely applied to various fields of national economy, such as pumping, medical treatment and industrial processing fields.
However, the popularization and application of the current semiconductor laser are limited by the beam quality, so that the improvement of the output uniformity of the semiconductor laser is an important research direction.
Disclosure of Invention
The utility model provides a semiconductor laser component, which aims at solving the problem of improving the output uniformity of a semiconductor laser, and the energy of each point of lattice laser emitted by the laser is uniform by combining and applying a SAC array lens, a crescent lens and an array lens, so that the output uniformity of the laser is greatly improved; the laser component has the advantages of simple preparation process, good welding effect, low thermal resistance of the laser module, good heat dissipation performance of products and easy mass production.
The utility model provides a semiconductor laser component, which comprises a laser chip, an electrode and a heat sink which are sequentially arranged from top to bottom, a cathode arranged on the other side of the top of the heat sink, a gold wire connected with the laser chip and the cathode, a SAC array lens, a crescent lens, an array lens and a shell arranged outside the SAC array lens, the crescent lens and the array lens which are sequentially arranged at the front ends of the laser chip, the electrode and the heat sink;
the SAC array lens is fixed on a laser output light path of the laser chip, one surface of the crescent lens, which is opposite to the SAC array lens, is a concave surface, the surface of the crescent lens, which is opposite to the array lens, is a convex surface, and the front end of the shell is provided with an installation hole of the array lens;
laser output by the laser chip is output to the crescent lens for fast axis collimation after being subjected to slow axis collimation by the SAC array lens, and then lattice laser output is formed by the array lens.
In the semiconductor laser assembly, the shell comprises a first shell, a second shell and a third shell which are sequentially arranged from front to back, wherein the first shell and the second shell are of hollow structures, the third shell is of a plate-shaped structure which is connected to the bottom of the second shell and extends backwards, and the bottom of the heat sink is fixedly connected with the bottom of the third shell or the outer side of the rear part of the second shell.
According to the semiconductor laser component, as an optimal mode, the first shell and the second shell are in axisymmetric structures, the first shell is of a front small and rear large round platform structure, the front end of the first shell is provided with an opening, the array lens is embedded into the opening, the crescent lens is fixed in the front end of the second shell, and the SAC array lens is fixed at the rear end of the second shell;
the first shell, the second shell and the third shell are all made of plastics.
According to the semiconductor laser component, as a preferred mode, the laser chip, the electrode and the heat sink are sequentially welded and fixed, the laser chip is a semiconductor chip outputting laser with the wave band of 300-3000nm, the electrode is insulating heat dissipation ceramic with CTE matched with the laser chip, the heat sink is made of metal, and the negative electrode is of a plate-shaped structure.
According to the semiconductor laser component, as a preferable mode, the laser chip is made of gallium arsenide, the length of the laser chip is 0.1-100 mm, the width of the laser chip is 0.1-100 mm, the height of the laser chip is 0.1-10 mm, and the length of the electrode is 0.1-100 mm, the width of the electrode is 0.1-100 mm, and the height of the electrode is 0.1-100 mm.
According to the semiconductor laser component, as an optimal mode, the SAC array lens is connected to the front ends of the laser chip, the electrode and the heat sink;
the SAC array lens is coated glass or non-coated organic light-transmitting material with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60 mm.
According to the semiconductor laser component, as a preferable mode, the crescent lens is a film-coated cemented lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens is made of glass or an organic light-transmitting material.
According to the semiconductor laser component, as a preferable mode, the crescent lens is a film-plated integrated lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens is made of glass or an organic light-transmitting material.
The semiconductor laser component is characterized in that the array lens is made of coated glass or non-coated organic light-transmitting materials with the length of 1-1000 mm, the width of 1-1000 mm, the thickness of 0.1-30 mm, the curvature radius of 0.2-60mm and the number of dot matrixes of 1-1000.
In a preferred embodiment of the semiconductor laser assembly of the present utility model, the wavelength of the lattice laser is 1470nm or 1726nm.
A semiconductor laser assembly, the components comprising: laser unit (including 1 electrode and 1 chip), heat sink, negative pole, SAC array lens, crescent lens, array lens, plastic shell.
The heat sink is a metal material with good heat dissipation performance;
the electrode is made of materials matched with the chip in CTE (coefficient of thermal expansion) such as insulating heat dissipation ceramic, and the size is long: 0.1-100 mm wide by 0.1-100 mm high by 0.1-100 mm;
the chip is made of gallium arsenide, and the size is long: 0.1-100 mm wide by 0.1-100 mm high by 0.1-10 mm, and the wavelength comprises all semiconductor chips with wave bands of 300-3000 nm;
the SAC array lens is made of glass or light-transmitting material, and the surface of the SAC array lens can be coated with a film or not; the SAC array lens has the size of 1-1000 mm long, 1-1000 mm wide, 0.1-30 mm high and 0.2-60mm radius of curvature;
the crescent lens is made of glass or light-transmitting material, and the surface of the crescent lens can be coated with a film or not; a cemented lens may be used, or an integral lens may be used; the lens size is 1-1000 mm long, 1-1000 mm wide, 0.1-30 mm high and 0.2-60mm radius of curvature;
the array lens is made of glass or a light-transmitting material, and the surface of the array lens can be coated with a film or not coated with a film; SAC array lens size is 1-1000 mm long, 1-1000 mm wide, 0.1-30 mm thick, 0.2-60mm radius of curvature, array lens lattice number is 1-1000;
the utility model only needs two welding steps, the first step prepares the laser unit (comprising 1 electrode and 1 chip), the second step adopts the frock to package the laser unit into an integral laser module, and the third step increases the optical part.
The utility model can be applied to skin treatment.
The utility model has the following advantages:
(1) The laser component makes the energy of each point of the lattice laser output by the laser uniform by combining and applying the SAC array lens, the crescent lens and the array lens, thereby greatly improving the output uniformity of the laser;
(2) The laser component has the advantages of simple preparation process, good welding effect, low thermal resistance of the laser module, good heat dissipation performance of products and easy mass production.
Drawings
FIG. 1 is a schematic diagram of a semiconductor laser assembly;
FIG. 2 is a schematic diagram of a laser module structure of a semiconductor laser assembly;
FIG. 3 is a vertical optical path diagram of a semiconductor laser assembly;
FIG. 4 is a horizontal optical path diagram of a semiconductor laser assembly;
fig. 5 is a graph showing the light emitting effect of a semiconductor laser assembly.
Reference numerals:
1. a laser chip; 2. an electrode; 3. a heat sink; 4. a negative electrode; 5. gold wire; 6. SAC array lens; 7. a crescent lens; 8. an array lens; 9. a housing; 91. a first housing; 92. a second housing; 93. and a third housing.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.
Example 1
As shown in fig. 1 to 4, a semiconductor laser assembly comprises a laser chip 1, an electrode 2, a heat sink 3, a cathode 4, a metal wire 5, a SAC array lens 6, a crescent lens 7, an array lens 8 and a shell 9, wherein the laser chip 1, the electrode 2 and the heat sink 3 are sequentially arranged from top to bottom, the cathode 4 is arranged on the other side of the top of the heat sink 3, the metal wire 5 is connected with the laser chip 1 and the cathode 4, and the SAC array lens 6, the crescent lens 7 and the array lens 8 are sequentially arranged at the front ends of the laser chip 1, the electrode 2 and the heat sink 3;
the SAC array lens 6 is fixed on a laser output light path of the laser chip 1, one surface of the crescent lens 7 opposite to the SAC array lens 6 is a concave surface, the surface opposite to the array lens 8 is a convex surface, and the front end of the shell 9 is provided with an installation hole of the array lens 8;
as shown in fig. 5, laser output from the laser chip 1 is output to the crescent lens 7 for fast axis collimation after being subjected to slow axis collimation by the SAC array lens 6, and then is output to form lattice laser by the array lens 8;
as shown in fig. 1, the housing 9 includes a first housing 91, a second housing 92 and a third housing 93 sequentially arranged from front to back, the first housing 91 and the second housing 92 are hollow structures, the third housing 93 is a plate-shaped structure connected to the bottom of the second housing 92 and extending backward, and the bottom of the heat sink 3 is fixedly connected with the bottom of the third housing 93 or the rear outer side of the second housing 92;
the first shell 91 and the second shell 92 are in axisymmetric structures, the first shell 91 is of a front small and rear large round platform structure, the front end of the first shell is provided with an opening, the array lens 8 is embedded into the opening, the crescent lens 7 is fixed inside the front end of the second shell 92, and the SAC array lens 6 is fixed at the rear end of the second shell 92;
the first housing 91, the second housing 92 and the third housing 93 are all made of plastic;
the laser chip 1, the electrode 2 and the heat sink 3 are sequentially welded and fixed, the laser chip 1 is a semiconductor chip outputting laser with the wave band of 300-3000nm, the electrode 2 is insulating heat dissipation ceramic with the CTE matched with that of the laser chip 1, the heat sink 3 is made of metal, and the negative electrode 4 is of a plate-shaped structure;
the laser chip 1 is made of gallium arsenide, the length of the laser chip 1 is 0.1-100 mm, the width is 0.1-100 mm, the height is 0.1-10 mm, the length of the electrode 2 is 0.1-100 mm, the width is 0.1-100 mm, and the height is 0.1-100 mm;
the SAC array lens 6 is connected to the front ends of the laser chip 1, the electrode 2 and the heat sink 3;
the SAC array lens 6 is coated glass or non-coated organic light-transmitting material with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm;
the crescent lens 7 is a film-coated cemented lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens 7 is glass or an organic light-transmitting material;
the crescent lens 7 is a film-coated integrated lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens 7 is made of glass or organic light-transmitting materials;
the array lens 8 is a film coated glass or an organic light-transmitting material which is not coated with film, and has the length of 1-1000 mm, the width of 1-1000 mm, the thickness of 0.1-30 mm, the curvature radius of 0.2-60mm and the number of dot matrixes of 1-1000;
the wavelength of the lattice laser is 1470nm or 1726nm.
Example 2
As shown in fig. 1 to 5, a semiconductor laser assembly, the components of which include: the laser unit (comprising 1 electrode 2 and 1 laser chip 1), heat sink 3, negative electrode 4, SAC array lens 86, crescent lens 7, array lens 8, plastic shell 9.
The heat sink 3 is made of copper material with good heat dissipation performance;
the electrode 2 is insulating heat dissipation ceramic, and the size is long: 4mm wide by 4mm high by 0.3mm;
the laser chip 1 is made of gallium arsenide, and has the following dimensions: 6mm, 1.5mm wide and 0.1mm high;
the SAC array lens 6 is made of glass material, and the surface of the SAC array lens is coated with a film; SAC array lens 86 is 6mm long, 6mm wide, 2mm high and 3mm radius of curvature;
the crescent lens 7 is made of glass material, and the surface of the crescent lens is coated with a film; a cemented lens may be used, or an integral lens may be used; the lens size is 6mm long, 6mm wide, 3mm high and 3mm radius of curvature;
the array lens 8 is made of glass material, and the surface of the array lens is coated with a film; the SAC array lens 86 has the dimensions of 6mm long, 6mm wide, 0.5mm thick, 3mm radius of curvature and 36 array lenses 8 lattice numbers;
the plastic housing 9 is made of all plastic materials.
Example 3
As shown in fig. 1 to 5, a semiconductor laser assembly, the components of which include: the laser unit (comprising 1 electrode 2 and 1 laser chip 1), heat sink 3, negative pole 4, SAC array lens 86, crescent lens 7, array lens 8, plastic shell 9;
the laser chip 1 is made of gallium arsenide, and has the following dimensions: 6mm, 1.5mm wide and 0.1mm high;
the electrode 2 is insulating heat dissipation ceramic, and the size is long: 4mm wide by 4mm high by 0.3mm;
the heat sink 3 is made of copper material with good heat dissipation performance;
the SAC array lens 6 is made of organic light-transmitting material, and the surface of the SAC array lens is not coated with a film; SAC array lens 86 is 6mm long, 6mm wide, 2mm high and 3mm radius of curvature;
the crescent lens 7 is made of organic light-transmitting material, the surface of the crescent lens is not coated with a film, and a cemented lens or an integrated lens can be adopted; the lens size is 6mm long, 6mm wide, 3mm high and 3mm radius of curvature;
the array lens 8 is made of organic light-transmitting material, and the surface of the array lens is not coated with a film; the SAC array lens 86 has the dimensions of 6mm long, 6mm wide, 0.5mm thick, 3mm radius of curvature and 24 array lenses 8;
the plastic housing 9 is made of all plastic materials.
The preparation methods of examples 1 to 3 are:
the preparation method of the laser module comprises the following steps: by adopting a tooling design, a proper amount of soldering paste is smeared on the welding surface of each material or a solder piece is adopted for welding, and the materials such as a laser unit, insulating heat dissipation ceramic, a heat sink 3 and the like are all clamped by the tooling, and the specific steps are as follows:
1. the chip 1 is soldered to the electrode 2 to form a chip unit.
2. Solder paste is applied under the chip unit. The solder paste coated chip unit is placed on the laser heat sink 3.
3. And limiting the laser unit by using a tool, and positioning the laser unit above the chip 1 by using a pressing block.
4. After all materials are confirmed and clamped, the whole tool is placed on a heating table to be heated, after the solder is melted, the heating is stopped, and the whole tool is cooled to the room temperature.
5. And adding a cathode 4 part and beating gold wires.
6. And (5) preparing the laser module.
The method for assembling the optical part comprises the following steps:
1. and adding an SAC array lens 6 at the front end of the laser module to perform slow axis collimation of the chip luminous point.
2. A crescent lens 7 is added in a plastic housing 9 for fast axis collimation.
3. An array lens 8 is added to enable the fast and slow axis light to form lattice laser.
The foregoing is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical scheme of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.
Claims (10)
1. A semiconductor laser assembly, characterized by: the LED lamp comprises a laser chip (1), an electrode (2) and a heat sink (3) which are sequentially arranged from top to bottom, a cathode (4) arranged on the other side of the top of the heat sink (3), a gold wire (5) connected with the laser chip (1) and the cathode (4), an SAC array lens (6), a crescent lens (7), an array lens (8) and a shell (9) arranged outside the array lens (8) which are sequentially arranged on the laser chip (1), the electrode (2) and the front end of the heat sink (3);
the SAC array lens (6) is fixed on a laser output light path of the laser chip (1), one surface of the crescent lens (7) opposite to the SAC array lens (6) is a concave surface, one surface of the crescent lens opposite to the array lens (8) is a convex surface, and the front end of the shell (9) is provided with a mounting hole of the array lens (8);
laser output by the laser chip (1) is output to the crescent lens (7) for fast axis collimation after being subjected to slow axis collimation by the SAC array lens (6), and then lattice laser output is formed by the array lens (8).
2. A semiconductor laser assembly as claimed in claim 1, wherein: the shell (9) comprises a first shell (91), a second shell (92) and a third shell (93) which are sequentially arranged from front to back, the first shell (91) and the second shell (92) are of hollow structures, the third shell (93) is of a plate-shaped structure which is connected to the bottom of the second shell (92) and extends backwards, and the bottom of the heat sink (3) is fixedly connected with the bottom of the third shell (93) or the outer side of the rear part of the second shell (92).
3. A semiconductor laser assembly according to claim 2, wherein: the first shell (91) and the second shell (92) are of axisymmetric structures, the first shell (91) is of a front small and rear large round platform structure, an opening is formed in the front end of the first shell, the array lens (8) is embedded into the opening, the crescent lens (7) is fixed inside the front end of the second shell (92), and the SAC array lens (6) is fixed at the rear end of the second shell (92);
the first shell (91), the second shell (92) and the third shell (93) are all made of plastics.
4. A semiconductor laser assembly as claimed in claim 1, wherein: the laser chip (1), the electrode (2) and the heat sink (3) are sequentially welded and fixed, the laser chip (1) is a semiconductor chip outputting laser with the wave band of 300-3000nm, the electrode (2) is insulating heat dissipation ceramic with the CTE matched with the laser chip (1), the heat sink (3) is made of metal, and the negative electrode (4) is of a plate-shaped structure.
5. A semiconductor laser assembly as defined in claim 4, wherein: the laser chip (1) is made of gallium arsenide, the length of the laser chip (1) is 0.1-100 mm, the width of the laser chip is 0.1-100 mm, the height of the laser chip is 0.1-10 mm, and the length of the electrode (2) is 0.1-100 mm, the width of the electrode is 0.1-100 mm, and the height of the electrode is 0.1-100 mm.
6. A semiconductor laser assembly as claimed in claim 1, wherein: the SAC array lens (6) is connected to the front ends of the laser chip (1), the electrode (2) and the heat sink (3);
the SAC array lens (6) is coated glass or an organic light-transmitting material which is not coated, wherein the length of the coated glass is 1-1000 mm, the width of the coated glass is 1-1000 mm, the height of the coated glass is 0.1-30 mm, and the curvature radius of the coated glass is 0.2-60 mm.
7. A semiconductor laser assembly as claimed in claim 1, wherein: the crescent lens (7) is a film-coated cemented lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens (7) is made of glass or an organic light-transmitting material.
8. A semiconductor laser assembly as claimed in claim 1, wherein: the crescent lens (7) is a film-coated integrated lens with the length of 1-1000 mm, the width of 1-1000 mm, the height of 0.1-30 mm and the curvature radius of 0.2-60mm, and the crescent lens (7) is made of glass or an organic light-transmitting material.
9. A semiconductor laser assembly as claimed in claim 1, wherein: the array lens (8) is coated glass or an organic light-transmitting material without coating, wherein the length of the coated glass is 1-1000 mm, the width of the coated glass is 1-1000 mm, the thickness of the coated glass is 0.1-30 mm, the curvature radius of the coated glass is 0.2-60mm, and the number of the dot matrixes is 1-1000.
10. A semiconductor laser assembly according to any one of claims 1 to 9, wherein: the wavelength of the lattice laser is 1470nm or 1726nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320104844.5U CN219144707U (en) | 2023-02-03 | 2023-02-03 | Semiconductor laser assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320104844.5U CN219144707U (en) | 2023-02-03 | 2023-02-03 | Semiconductor laser assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219144707U true CN219144707U (en) | 2023-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320104844.5U Active CN219144707U (en) | 2023-02-03 | 2023-02-03 | Semiconductor laser assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219144707U (en) |
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2023
- 2023-02-03 CN CN202320104844.5U patent/CN219144707U/en active Active
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