JPS59149072A - Light-emitting semiconductor device - Google Patents
Light-emitting semiconductor deviceInfo
- Publication number
- JPS59149072A JPS59149072A JP58022762A JP2276283A JPS59149072A JP S59149072 A JPS59149072 A JP S59149072A JP 58022762 A JP58022762 A JP 58022762A JP 2276283 A JP2276283 A JP 2276283A JP S59149072 A JPS59149072 A JP S59149072A
- Authority
- JP
- Japan
- Prior art keywords
- emitting element
- cap
- optical fiber
- light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
Description
【発明の詳細な説明】 本発明は光フアイバー付発光半導体装置に関する。[Detailed description of the invention] The present invention relates to a light emitting semiconductor device with an optical fiber.
光通信に用いる光通信用装置の一つとして、従来第１図
に示すような光ファイ、バー付近赤外発光タイオード装
置（工ＲＢＤ）が開発されている。As one of the optical communication devices used in optical communication, an optical fiber near-bar infrared emitting diode device (RBD) as shown in FIG. 1 has been developed.
この装置は、図示のように、金属製のステム１の主面中
央に平面型の発光素子２會上面に固定したサプマウン）
３′ｔ−固定した構造となっている。As shown in the figure, this device consists of a flat light emitting element 2 fixed to the top surface of a metal stem 1 at the center of the main surface.
3't-fixed structure.
また、ステム１にはガラス４を介して２本のり一ド５が
貫通固定されている。どれらリード５はワイヤ６を介し
てサブマウント３０図示しない雷、極および発光素手２
の上部電極７と電気的に接続される。また、サブマウン
ト３の電極は発光素子２の下部電極８と導通状態となっ
ている。一方、ステム１の主面には金属製のキャップ９
が増シ付けられている。このキャップ９はフランジ１０
を有する帽子型構造となっていて、フランジ１０の下面
に設けたプロジェクション１１を介してリングウェルド
によってステム１に気密的に固定されている。また、キ
ャップ９の中央上部にはセラミ”）クスリーブ１２が挿
嵌づれるとともに、このセラミヅクスリーブ１２のガイ
ド孔１３の延畏下方部分には、キャップ９を穿設した挿
入孔１４が設けられている。そして、これらガイド孔１
３および挿入孔１４共は１本の光ファイバー１５が挿入
され、かつ挿入孔１ｊＫ注入した半田１６によってキャ
ップ９に固定されている。また、光フアイバー１５０内
端は半球状の先球部１７とな９、発光素子２から発光さ
れた光を取り込み、光ファイバ−１５を介して外部に取
シ出すようになっている。Further, two glue rods 5 are fixed to the stem 1 through a glass 4. The leads 5 are connected to the submount 30 via wires 6 to lightning, poles, and light emitting hands 2 (not shown).
It is electrically connected to the upper electrode 7 of. Furthermore, the electrode of the submount 3 is electrically connected to the lower electrode 8 of the light emitting element 2. On the other hand, a metal cap 9 is attached to the main surface of the stem 1.
is added. This cap 9 has a flange 10
It has a cap-shaped structure, and is airtightly fixed to the stem 1 by a ring weld via a projection 11 provided on the lower surface of the flange 10. A ceramic sleeve 12 is inserted into the upper center of the cap 9, and an insertion hole 14 into which the cap 9 is inserted is provided in the lower part of the guide hole 13 of the ceramic sleeve 12. These guide holes 1
One optical fiber 15 is inserted into both the insertion hole 1jK and the insertion hole 14, and is fixed to the cap 9 by solder 16 injected into the insertion hole 1jK. Further, the inner end of the optical fiber 150 has a hemispherical tip portion 17 9, which takes in the light emitted from the light emitting element 2 and outputs it to the outside via the optical fiber 15.
ところで、この装置の組立にあっては、発光素子２を取
り付けたステム１と、光ファイバー１５を取シ付けたキ
ャップ９とを、それぞれ用意した後、ステム１上にキャ
ップ９を重ね、キャップ９をステム１に対して相対的に
水平移動させ、発光素子２から発光された光の光ファイ
バー１５に取シ込む光量が最大とがった位置で停止させ
、その後、リングウェルドによってプロジェクション１
１會潰して気密封止を行なうことによって組み立てる。By the way, in assembling this device, after preparing the stem 1 to which the light emitting element 2 is attached and the cap 9 to which the optical fiber 15 is attached, the cap 9 is stacked on the stem 1, and the cap 9 is placed on top of the stem 1. The projection 1 is moved horizontally relative to the stem 1 and stopped at a point where the amount of light emitted from the light emitting element 2 entering the optical fiber 15 is maximum.
Assemble by crushing and airtightly sealing.
しかし、この構造の光ファイバー付工ＲＫＤは光取込効
率が低い不良が多々生じる欠点がある。However, the optical fiber-attached RKD having this structure has the drawback of low light intake efficiency and frequent defects.
本発明者は光取込効惠が最も高い状態下でリングウェル
ドするにも拘わらず、このような光取込不艮が生じる原
因について調べたところつぎのようなことを知った。す
なわち、リングウェルド時にはキャップ９はステム１に
押し付けられた状態で抵抗溶接がなされ、フランジ１０
の下部のプロジェクション１１が溶けて押し潰される。The inventor of the present invention investigated the cause of such failure of light uptake despite ring welding under conditions where the light uptake efficiency is highest, and found the following. That is, during ring welding, resistance welding is performed while the cap 9 is pressed against the stem 1, and the flange 10
The projection 11 at the bottom of the is melted and crushed.
このプロジェクション１１の軟化時のキャップ９の下降
時にキャップ９は真直には降下することは少なく、横方
向にずれて降下することが多い。この横方向のずれはプ
ロジェクションの断面形状によっても異るが、たとえば
最大で±２０μｍと本なる。こねに対して、平面型発光
素子のニア−フィールドパターンは第２図に示すように
、釉峻な山状パｌ−ンとカリ、光フアイバー人力（光出
力）が半分になる位置はニア−フィールドパターンのピ
ーク位置から±５１ｚｍの位置となる。したがって、キ
セ、ツブ９會ヌテム１にリングウェルドした際、キャッ
プ９のずれを±５μｍ以内にすることは極めて難しいこ
とがわかる。When the cap 9 descends when the projection 11 softens, the cap 9 rarely descends straight, but often shifts laterally. This lateral deviation varies depending on the cross-sectional shape of the projection, but is, for example, ±20 μm at most. In contrast, the near-field pattern of a planar light emitting element is a sharply glazed mountain-like pattern and a potion, as shown in Figure 2, and the position where the optical fiber's power (light output) is halved is near-field. The position is ±51 zm from the peak position of the field pattern. Therefore, it can be seen that it is extremely difficult to keep the displacement of the cap 9 within ±5 μm when ring-welding the cap 9 to the nut 1.
一方、光通信用には使用されてい々いが、同様に近赤外
光を発光する発光素子として、第３図の原理図で示すよ
うに、光放出面を半球面１８とし、半球体の中心近傍位
置に位置する発光部１９からの光２０ｉ前方に発光する
いわゆるドーム型発光素子２１が知られている。このド
ーム型発光素子２１のニアフィールドパターンは、第４
図で示すように緩やかな山状パターンを描く、そして、
光フアイバー人力（光出力）が半分になる位置は、エア
ーフィールドパターンのピーク位置から±２５μｍとな
る。この数値はリングウェルドの際のキャップ９の最大
ずれ値よりも大きいことになる。On the other hand, although it is often used for optical communication, as a light emitting element that similarly emits near-infrared light, the light emitting surface is a hemispherical surface 18, as shown in the principle diagram of FIG. A so-called dome-shaped light emitting element 21 that emits light 20i forward from a light emitting section 19 located near the center is known. The near field pattern of this dome-shaped light emitting element 21 is the fourth
Draw a gentle mountain-like pattern as shown in the figure, and
The position where the optical fiber power (light output) is halved is ±25 μm from the peak position of the air field pattern. This value is larger than the maximum deviation value of the cap 9 during ring welding.
そこで、本発明者は、このドーム型発光素子を用いて光
ファイバー付工ＲＦｊＩｌ−組み立てることを考え、本
発明を成した。Therefore, the inventor of the present invention considered assembling an optical fiber attached RFjIl using this dome-shaped light emitting element, and accomplished the present invention.
したがって、本発明の目的は組立が容易でかつ光ファイ
バーへの光取込効高が常に高車となる構造の光フアイバ
ー付発光半導体装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a light emitting semiconductor device with an optical fiber that is easy to assemble and has a structure in which the efficiency of light intake into the optical fiber is always high.
以下、本発明を実施例によシ説明する。The present invention will be explained below using examples.
第５図は本発明の一実施例による光フアイバー付近赤外
発光ダイオード（工１ｔＥ Ｄ ）ｙ示す断面図である
。FIG. 5 is a sectional view showing an infrared light emitting diode (ED) near an optical fiber according to an embodiment of the present invention.
この装置は、図示のように、金属製のステム１の主面中
央にサブマウント３を介してドーム型発光素子２１を固
定した構造となっている。すなわち、ドーム型発光素子
２１は下面にカソード電極２２およびアノードを極２３
を有し、上面は半球面１８と力る構造をしていて、フェ
イスダウンボンディングによってサブマウント３に固定
される。As shown in the figure, this device has a structure in which a dome-shaped light emitting element 21 is fixed to the center of the main surface of a metal stem 1 via a submount 3. That is, the dome-shaped light emitting element 21 has a cathode electrode 22 and an anode electrode 23 on the bottom surface.
The upper surface has a hemispherical surface 18 and is fixed to the submount 3 by face-down bonding.
サブマウント３はたとえば薄いシリコン板から寿ってい
て、上面に絶縁膜を介して配線層（図示せず）を有して
いる。そして、この配線層部分に前記カソード電極２２
およびアノード電極２３は接続される。サブマウント３
はドーム型発光素子２１を固定した状態でステム１の主
面に接合材（図示ゼず）を介して固定される。The submount 3 is made of, for example, a thin silicon plate, and has a wiring layer (not shown) on its upper surface with an insulating film interposed therebetween. Then, the cathode electrode 22 is placed on this wiring layer portion.
and anode electrode 23 are connected. submount 3
is fixed to the main surface of the stem 1 via a bonding material (not shown) with the dome-shaped light emitting element 21 fixed therein.
一方、ステム１には２本のり一ド５がガラス４を介して
貫通固定されている。これらリード５はサブマウント３
の配線層部分とそれぞれワイヤ６を介して接続され、両
リード５に所定の電圧が印加されるとドーム型発光素子
２１が近赤外光を発光するようになっている。On the other hand, two glue sticks 5 are fixed to the stem 1 through a glass 4. These leads 5 are submount 3
The dome-shaped light emitting element 21 emits near-infrared light when a predetermined voltage is applied to both leads 5, respectively, through wires 6.
他方、ステム１の主面にはドーム型発光素子２１、リー
ド５等會被う金属製のキャップ９が取シ付けられている
。このキャップ９はフランジ１０全下部周縁に有する帽
子型構造となっていて、７ランジ１０の下面に設けたプ
ロジェクション１１を介してリングウェルドによってス
テムＩＫ気密的に固定されている。ｆた、キャップ９の
中央上部にはセラミックスリーブ１２が挿嵌されるとと
もに、このセラＳ＋７クスリープ１２のガイド７Ｌ１３
の延長下方部分には、キャップ９を穿設した挿入孔１４
が設けられている。そして、これらガイド孔１３および
挿入孔１４には１本の光ファイバー１５が挿入され、か
つ挿入孔１４に注入した半田１６（耐湿性は劣るがレジ
ン等の接合体でもよい。On the other hand, a metal cap 9 is attached to the main surface of the stem 1 to cover the dome-shaped light emitting element 21, the lead 5, etc. This cap 9 has a hat-shaped structure around the entire lower periphery of the flange 10, and is airtightly fixed to the stem IK by a ring weld via a projection 11 provided on the lower surface of the 7 flange 10. In addition, a ceramic sleeve 12 is inserted into the upper center of the cap 9, and a guide 7L13 of the ceramic sleeve 12 is inserted into the upper center of the cap 9.
An insertion hole 14 in which a cap 9 is bored is provided in the extended lower part of the
is provided. A single optical fiber 15 is inserted into the guide hole 13 and the insertion hole 14, and solder 16 injected into the insertion hole 14 (a bonded body of resin or the like may be used, although its moisture resistance is poor).
）によってキャップ９に固定されている。また、光ファ
イバー１５の内端は半球状の先球部１７とな９、ドーム
型発光素子２１から発光された光を取り込み、光ファイ
バー１５を介して外部に取シ出すようになっている。) is fixed to the cap 9. The inner end of the optical fiber 15 has a hemispherical tip 17 9, which takes in the light emitted from the dome-shaped light emitting element 21 and outputs it to the outside via the optical fiber 15.
このような装置は、その組立にシいて、ドーム型発光素
子２１取り付けたステム１に、光ファイバー１５を取シ
付けたキャップ９を重ね、キャップ９をステム１に対し
て相対的に水平移動させ、ドーム型発光素子２１から発
光された光の光ファイバー１５に取り込む光量が最大と
なった位置で停止させ、その状態でリングウェルドを行
なって、プロジェクション１１を溶かしてステム１にキ
ャップ９を気密的に固定する。この際、プロジェクショ
ン１１が溶けて潰れる際、キャップ９は横方向にずれる
が、そのずれは最大でも±２０μｍ稈度である。これに
灼して、ドーム型発光素子２１の光分布は第４図でも示
すように光出力のピーク位置から外れた±２５ｐｒｎの
位置でも出力は最大出力の半分程度となるだけであシ、
±２０μｍ位置ずれした位置では光出力は最大光出力の
７０％前後と大きい。このため、本発明による工ＲＢＤ
は常に所望の光出力を有するように組み立てられる。ま
た、リングウェルド時の組立余裕度も大きいことから、
本発明の工ＲＥＤはその組立も容易とな如、作業性も高
い。また、本発明の工ＲＦｆＤは封止部分は金属、ガラ
スから々ることから、気密性が高い。When assembling such a device, the cap 9 to which the optical fiber 15 is attached is placed on the stem 1 to which the dome-shaped light emitting element 21 is attached, and the cap 9 is horizontally moved relative to the stem 1. The light emitted from the dome-shaped light emitting element 21 is stopped at the position where the amount of light that is taken into the optical fiber 15 is maximum, and in this state ring welding is performed to melt the projection 11 and fix the cap 9 to the stem 1 airtightly. do. At this time, when the projection 11 melts and collapses, the cap 9 shifts in the lateral direction, but the shift is ±20 μm at most. In addition, as shown in FIG. 4, the light distribution of the dome-shaped light emitting element 21 is such that even at a position of ±25prn away from the peak position of the light output, the output is only about half of the maximum output.
At a position shifted by ±20 μm, the optical output is as large as around 70% of the maximum optical output. For this reason, the engineering RBD according to the present invention
are always assembled to have the desired light output. In addition, since there is a large assembly margin during ring welding,
The RED of the present invention is easy to assemble and has high workability. Furthermore, the RFfD of the present invention has high airtightness because the sealing portion is made of metal or glass.
したがって、本発明によれば組立が容易で光ファイバー
への光取込効率が高く、かつ信頼度が高い光フアイバー
付発光半導体装置を提供することができる。Therefore, according to the present invention, it is possible to provide a light-emitting semiconductor device with an optical fiber that is easy to assemble, has high efficiency of light introduction into the optical fiber, and has high reliability.
第１図は従来の光フアイバー付発光半導体装置の断面図
、
第２図は平面型発光素子の光出力１示すグラフ、第３図
は平面型発光素子の原理図、
第４図はドーム型発光素子の光出力を示すグラフ、
第５図は本発明の一実施例による光フアイバー付発光半
導体装置の断面図である。
１・・・ステム、２・・・発光緊子、３・・・サブマウ
ント、４・・・リード、９・・・キャップ、１０・・・
フランジ、１１・・・プロジェクション、１２・・・セ
ラミックスリーフ’、１５・・・光ファイバー、１６・
・・半田、１７・・・先球部、１８・・・生球面、１９
・・・発光部、２１・・・ドーム型発光素子。
−３４・Figure 1 is a cross-sectional view of a conventional light emitting semiconductor device with optical fibers, Figure 2 is a graph showing the optical output of a flat light emitting element, Figure 3 is a principle diagram of a flat light emitting element, and Figure 4 is a dome type light emitting element. A graph showing the light output of the device. FIG. 5 is a sectional view of a light emitting semiconductor device with an optical fiber according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Stem, 2...Light-emitting element, 3...Submount, 4...Lead, 9...Cap, 10...
Flange, 11... Projection, 12... Ceramic leaf', 15... Optical fiber, 16...
...Solder, 17...Top ball part, 18...Raw ball surface, 19
...Light emitting section, 21...Dome-shaped light emitting element. -34・
Claims (1)
子を被うように形成されたキャップと、このキャップに
貫通固定されかつ内端を前記発光素子に灼面さゼた光フ
ァイバーと、會有する光フアイバー付発光半導体装置に
おいて、前記発光素子はドーム型発光素子からなってい
ることを特徴とする光フアイバー付発光半導体装置。1. A stem having a light emitting element attached to its main surface, a cap formed to cover the light emitting element, an optical fiber fixed through the cap and having an inner end attached to the light emitting element. 1. A light emitting semiconductor device with an optical fiber, wherein the light emitting element is a dome-shaped light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022762A JPS59149072A (en) | 1983-02-16 | 1983-02-16 | Light-emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022762A JPS59149072A (en) | 1983-02-16 | 1983-02-16 | Light-emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59149072A true JPS59149072A (en) | 1984-08-25 |
Family
ID=12091686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58022762A Pending JPS59149072A (en) | 1983-02-16 | 1983-02-16 | Light-emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59149072A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132450U (en) * | 1986-02-14 | 1987-08-21 | ||
| JPS63113408A (en) * | 1986-10-30 | 1988-05-18 | Nippon Hoso Kyokai <Nhk> | Light emitting module |
| JPS63168410U (en) * | 1987-04-20 | 1988-11-02 | ||
| WO1994011929A2 (en) * | 1992-11-06 | 1994-05-26 | Bt&D Technologies Ltd. | Optoelectronic devices |
| US7968980B2 (en) * | 2006-03-02 | 2011-06-28 | Nichia Corporation | Support member for mounting a semiconductor device, conductive materials, and its manufacturing method |
-
1983
- 1983-02-16 JP JP58022762A patent/JPS59149072A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132450U (en) * | 1986-02-14 | 1987-08-21 | ||
| JPS63113408A (en) * | 1986-10-30 | 1988-05-18 | Nippon Hoso Kyokai <Nhk> | Light emitting module |
| JPS63168410U (en) * | 1987-04-20 | 1988-11-02 | ||
| WO1994011929A2 (en) * | 1992-11-06 | 1994-05-26 | Bt&D Technologies Ltd. | Optoelectronic devices |
| WO1994011929A3 (en) * | 1992-11-06 | 1994-07-21 | Bt & D Technologies Ltd | Optoelectronic devices |
| US7968980B2 (en) * | 2006-03-02 | 2011-06-28 | Nichia Corporation | Support member for mounting a semiconductor device, conductive materials, and its manufacturing method |
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