JPS6043825A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6043825A
JPS6043825A JP15185883A JP15185883A JPS6043825A JP S6043825 A JPS6043825 A JP S6043825A JP 15185883 A JP15185883 A JP 15185883A JP 15185883 A JP15185883 A JP 15185883A JP S6043825 A JPS6043825 A JP S6043825A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
aluminum layer
developed
etching
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15185883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0263292B2 (cg-RX-API-DMAC7.html
Inventor
Atsutoshi Satou
佐藤 篤利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP15185883A priority Critical patent/JPS6043825A/ja
Publication of JPS6043825A publication Critical patent/JPS6043825A/ja
Publication of JPH0263292B2 publication Critical patent/JPH0263292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP15185883A 1983-08-19 1983-08-19 半導体装置の製造方法 Granted JPS6043825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15185883A JPS6043825A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15185883A JPS6043825A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6043825A true JPS6043825A (ja) 1985-03-08
JPH0263292B2 JPH0263292B2 (cg-RX-API-DMAC7.html) 1990-12-27

Family

ID=15527785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15185883A Granted JPS6043825A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6043825A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPH0263292B2 (cg-RX-API-DMAC7.html) 1990-12-27

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