JPS6043820A - プラズマ気相反応方法およびその製造装置 - Google Patents

プラズマ気相反応方法およびその製造装置

Info

Publication number
JPS6043820A
JPS6043820A JP58151407A JP15140783A JPS6043820A JP S6043820 A JPS6043820 A JP S6043820A JP 58151407 A JP58151407 A JP 58151407A JP 15140783 A JP15140783 A JP 15140783A JP S6043820 A JPS6043820 A JP S6043820A
Authority
JP
Japan
Prior art keywords
substrate
electric field
reaction
electrodes
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151407A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0463537B2 (cg-RX-API-DMAC7.html
Inventor
Shunpei Yamazaki
舜平 山崎
Mamoru Tashiro
田代　衛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58151407A priority Critical patent/JPS6043820A/ja
Publication of JPS6043820A publication Critical patent/JPS6043820A/ja
Publication of JPH0463537B2 publication Critical patent/JPH0463537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Photovoltaic Devices (AREA)
JP58151407A 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置 Granted JPS6043820A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151407A JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151407A JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Publications (2)

Publication Number Publication Date
JPS6043820A true JPS6043820A (ja) 1985-03-08
JPH0463537B2 JPH0463537B2 (cg-RX-API-DMAC7.html) 1992-10-12

Family

ID=15517916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151407A Granted JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Country Status (1)

Country Link
JP (1) JPS6043820A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPH0463537B2 (cg-RX-API-DMAC7.html) 1992-10-12

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