JPS6042298A - 鉛ビスマス酸バリウム単結晶薄膜の製造方法 - Google Patents

鉛ビスマス酸バリウム単結晶薄膜の製造方法

Info

Publication number
JPS6042298A
JPS6042298A JP58146702A JP14670283A JPS6042298A JP S6042298 A JPS6042298 A JP S6042298A JP 58146702 A JP58146702 A JP 58146702A JP 14670283 A JP14670283 A JP 14670283A JP S6042298 A JPS6042298 A JP S6042298A
Authority
JP
Japan
Prior art keywords
thin film
single crystal
substrate
sputtering
porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58146702A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6253479B2 (enrdf_load_stackoverflow
Inventor
Minoru Suzuki
実 鈴木
Toshiaki Murakami
敏明 村上
Yoshikazu Hidaka
日高　義和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58146702A priority Critical patent/JPS6042298A/ja
Publication of JPS6042298A publication Critical patent/JPS6042298A/ja
Publication of JPS6253479B2 publication Critical patent/JPS6253479B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58146702A 1983-08-12 1983-08-12 鉛ビスマス酸バリウム単結晶薄膜の製造方法 Granted JPS6042298A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146702A JPS6042298A (ja) 1983-08-12 1983-08-12 鉛ビスマス酸バリウム単結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146702A JPS6042298A (ja) 1983-08-12 1983-08-12 鉛ビスマス酸バリウム単結晶薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6042298A true JPS6042298A (ja) 1985-03-06
JPS6253479B2 JPS6253479B2 (enrdf_load_stackoverflow) 1987-11-10

Family

ID=15413614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146702A Granted JPS6042298A (ja) 1983-08-12 1983-08-12 鉛ビスマス酸バリウム単結晶薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6042298A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61215296A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano ＢａＰｂ↓１−ｘＢｉｘＯ↓３単結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61215296A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano ＢａＰｂ↓１−ｘＢｉｘＯ↓３単結晶の製造方法
US4731153A (en) * 1985-03-18 1988-03-15 Shinichi Hirano Method to manufacture BaPb1-x BIx O3 single crystal

Also Published As

Publication number Publication date
JPS6253479B2 (enrdf_load_stackoverflow) 1987-11-10

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