JPS6041229A - 半導体装置の製造方法及びその製造装置 - Google Patents

半導体装置の製造方法及びその製造装置

Info

Publication number
JPS6041229A
JPS6041229A JP14923783A JP14923783A JPS6041229A JP S6041229 A JPS6041229 A JP S6041229A JP 14923783 A JP14923783 A JP 14923783A JP 14923783 A JP14923783 A JP 14923783A JP S6041229 A JPS6041229 A JP S6041229A
Authority
JP
Japan
Prior art keywords
etching
etched
reaction chamber
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14923783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478005B2 (enrdf_load_stackoverflow
Inventor
Toshihiro Sugii
寿博 杉井
Takashi Ito
隆司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14923783A priority Critical patent/JPS6041229A/ja
Publication of JPS6041229A publication Critical patent/JPS6041229A/ja
Publication of JPH0478005B2 publication Critical patent/JPH0478005B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP14923783A 1983-08-17 1983-08-17 半導体装置の製造方法及びその製造装置 Granted JPS6041229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14923783A JPS6041229A (ja) 1983-08-17 1983-08-17 半導体装置の製造方法及びその製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14923783A JPS6041229A (ja) 1983-08-17 1983-08-17 半導体装置の製造方法及びその製造装置

Publications (2)

Publication Number Publication Date
JPS6041229A true JPS6041229A (ja) 1985-03-04
JPH0478005B2 JPH0478005B2 (enrdf_load_stackoverflow) 1992-12-10

Family

ID=15470874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14923783A Granted JPS6041229A (ja) 1983-08-17 1983-08-17 半導体装置の製造方法及びその製造装置

Country Status (1)

Country Link
JP (1) JPS6041229A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283129A (ja) * 1985-06-08 1986-12-13 Sony Corp エツチング方法
JPS62174969A (ja) * 1986-01-28 1987-07-31 Fujitsu Ltd 半導体装置の製造方法
JPS6365648A (ja) * 1986-09-05 1988-03-24 Fujitsu Ltd 半導体基板の製造方法
JPS63110726A (ja) * 1986-10-29 1988-05-16 Hitachi Ltd エツチング方法
JPH01103836A (ja) * 1987-07-02 1989-04-20 Toshiba Corp ドライエッチング方法およびドライエッチング装置
JPH01295424A (ja) * 1988-01-14 1989-11-29 Sanyo Electric Co Ltd 光励起エッチング方法
JPH02220438A (ja) * 1989-02-22 1990-09-03 Hitachi Ltd レーザ処理方法およびその装置
JPH0342825A (ja) * 1989-07-11 1991-02-25 Tokyo Electron Ltd アッシング方法
JP2021094711A (ja) * 2019-12-13 2021-06-24 Ｔｏｙｏ Ｔｉｒｅ株式会社 空気入りタイヤの製造装置及び製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149643A (en) * 1979-05-07 1980-11-21 Perkin Elmer Corp Method and device for chemically treating material to be treated
JPS57202732A (en) * 1981-06-05 1982-12-11 Mitsubishi Electric Corp Fine pattern formation
JPS5863136A (ja) * 1981-10-09 1983-04-14 Seiko Epson Corp 光ドライエツチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149643A (en) * 1979-05-07 1980-11-21 Perkin Elmer Corp Method and device for chemically treating material to be treated
JPS57202732A (en) * 1981-06-05 1982-12-11 Mitsubishi Electric Corp Fine pattern formation
JPS5863136A (ja) * 1981-10-09 1983-04-14 Seiko Epson Corp 光ドライエツチング装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283129A (ja) * 1985-06-08 1986-12-13 Sony Corp エツチング方法
JPS62174969A (ja) * 1986-01-28 1987-07-31 Fujitsu Ltd 半導体装置の製造方法
JPS6365648A (ja) * 1986-09-05 1988-03-24 Fujitsu Ltd 半導体基板の製造方法
JPS63110726A (ja) * 1986-10-29 1988-05-16 Hitachi Ltd エツチング方法
JPH01103836A (ja) * 1987-07-02 1989-04-20 Toshiba Corp ドライエッチング方法およびドライエッチング装置
JPH01295424A (ja) * 1988-01-14 1989-11-29 Sanyo Electric Co Ltd 光励起エッチング方法
JPH02220438A (ja) * 1989-02-22 1990-09-03 Hitachi Ltd レーザ処理方法およびその装置
JPH0342825A (ja) * 1989-07-11 1991-02-25 Tokyo Electron Ltd アッシング方法
JP2021094711A (ja) * 2019-12-13 2021-06-24 Ｔｏｙｏ Ｔｉｒｅ株式会社 空気入りタイヤの製造装置及び製造方法

Also Published As

Publication number Publication date
JPH0478005B2 (enrdf_load_stackoverflow) 1992-12-10

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