JPS57202732A - Fine pattern formation - Google Patents

Fine pattern formation

Info

Publication number
JPS57202732A
JPS57202732A JP8779681A JP8779681A JPS57202732A JP S57202732 A JPS57202732 A JP S57202732A JP 8779681 A JP8779681 A JP 8779681A JP 8779681 A JP8779681 A JP 8779681A JP S57202732 A JPS57202732 A JP S57202732A
Authority
JP
Japan
Prior art keywords
particle beams
pattern
fine pattern
aimed
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8779681A
Other languages
Japanese (ja)
Inventor
Masahiro Yoneda
Tadashi Nishimura
Hideaki Arima
Hayaaki Fukumoto
Katsuhiro Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8779681A priority Critical patent/JPS57202732A/en
Priority to DE19823221004 priority patent/DE3221004A1/en
Publication of JPS57202732A publication Critical patent/JPS57202732A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To apply etching to an irradiated place only by a method wherein a substrate is installed in specific gas atmosphere and extremely constricted energy beams are aimed at the substrate and radical and reactive ions are generated in plasma.
CONSTITUTION: When Si is installed in CF4 and charged particle beams are aimed at a desired place, the CF4 is dissociated into excited F atom or reactive ion F+ or the like and the irradiated place only is reacted and etched and the Si is physically etched by the collision of the charged particles as well. Therefore, a pattern can be formed by directly lithographing the pattern by the charged particle beams and a fine pattern can easily be formed by beam diameter. Laser, X-rays, ultraviolet rays can be used instead of charge particle beams.
COPYRIGHT: (C)1982,JPO&Japio
JP8779681A 1981-06-05 1981-06-05 Fine pattern formation Pending JPS57202732A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8779681A JPS57202732A (en) 1981-06-05 1981-06-05 Fine pattern formation
DE19823221004 DE3221004A1 (en) 1981-06-05 1982-06-03 Plasma etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8779681A JPS57202732A (en) 1981-06-05 1981-06-05 Fine pattern formation

Publications (1)

Publication Number Publication Date
JPS57202732A true JPS57202732A (en) 1982-12-11

Family

ID=13924936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8779681A Pending JPS57202732A (en) 1981-06-05 1981-06-05 Fine pattern formation

Country Status (2)

Country Link
JP (1) JPS57202732A (en)
DE (1) DE3221004A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041229A (en) * 1983-08-17 1985-03-04 Fujitsu Ltd Manufacture of semiconductor device and manufacturing equipment thereof
JPS6065534A (en) * 1983-09-20 1985-04-15 Nec Corp Forming method for pattern
JPS60126836A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Dry etching method
JPS613410A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Dry etching method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920004171B1 (en) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 Dry etching apparatus
DE3615361C2 (en) * 1986-05-06 1994-09-01 Santos Pereira Ribeiro Car Dos Device for the surface treatment of workpieces

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041229A (en) * 1983-08-17 1985-03-04 Fujitsu Ltd Manufacture of semiconductor device and manufacturing equipment thereof
JPH0478005B2 (en) * 1983-08-17 1992-12-10 Fujitsu Ltd
JPS6065534A (en) * 1983-09-20 1985-04-15 Nec Corp Forming method for pattern
JPS60126836A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Dry etching method
JPS613410A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Dry etching method

Also Published As

Publication number Publication date
DE3221004A1 (en) 1982-12-23

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