JPS6041048U

JPS6041048U - semiconductor equipment

Info

Publication number: JPS6041048U
Application number: JP13447283U
Authority: JP
Inventors: 原山　政弘
Original assignee: 日本電気アイシーマイコンシステム株式会社
Priority date: 1983-08-26
Filing date: 1983-08-26
Publication date: 1985-03-23

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図ａは本考案の一実施例の平面図、同図すは図ａの
Ａ−Ａ断面図である。１・・・Ｎエミツタ層、２・・・Ｐベース層、３・・・
Ｎコレクタ層、４・・・Ｎ＋埋込層、５・・・Ｐ型絶縁
領域（基板）、５ａ・・・Ｐ型絶縁領域上のコンタクト
、６・・・エミッタ配線、６ａ・・・エミッタコンタク
ト、７・・・ベース配線、７ａ・・・ベースコンタクト
、８・・・コレクタ配線、８　ａ・・・コレクタコンタ
クト１．９・・・絶縁膜、１０・・・抵抗成分。FIG. 1a is a plan view of an embodiment of the present invention, and the same figure is a sectional view taken along the line AA in FIG. 1a. 1...N emitter layer, 2...P base layer, 3...
N collector layer, 4...N+ buried layer, 5...P type insulating region (substrate), 5a...contact on the P type insulating region, 6...emitter wiring, 6a...emitter contact , 7...Base wiring, 7a...Base contact, 8...Collector wiring, 8a...Collector contact 1.9...Insulating film, 10...Resistance component.

Claims

[Scope of utility model registration request]

Bipolar N formed by PN junction separation on a P-type substrate
In a semiconductor device including a PN transistor, the NP
N) A semiconductor device characterized in that a contact connected to the emitter of the transistor is provided in a band shape on the P-type insulating region along the PN junction.