JPS6033366A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS6033366A
JPS6033366A JP14143283A JP14143283A JPS6033366A JP S6033366 A JPS6033366 A JP S6033366A JP 14143283 A JP14143283 A JP 14143283A JP 14143283 A JP14143283 A JP 14143283A JP S6033366 A JPS6033366 A JP S6033366A
Authority
JP
Japan
Prior art keywords
light
plasma
vacuum container
glass
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14143283A
Other languages
Japanese (ja)
Inventor
Yuichiro Yamada
雄一郎 山田
Masuo Tanno
丹野 益男
Toshimichi Ishida
敏道 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14143283A priority Critical patent/JPS6033366A/en
Publication of JPS6033366A publication Critical patent/JPS6033366A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To provide the titled apparatus capable of performing the detection or irradiation of light in good reproducibility, constituted so as to prevent the adhesion of a reaction product to a light pervious plate by providing a plasma resistant mesh material to a viewing port having the light pervious plate provided to a vacuum container. CONSTITUTION:In a dry etching apparatus wherein a vacuum container 11 is evacuated to supply treating gas and plasma is generated between a pair of electrodes arranged in opposed relationship to etch a specimen supported by one electrode, plasma light is detected through the glass 3 provided to one end of the viewing port 12 attached to the vacuum container 11 to perform the monitoring of an etching process or light is irradiated to perform the adjustment of a plasma state. A mesh material 14 comprising a plasma resistant material is inserted into the glass 3 of the above mentioned viewing port 2 in the side of the vacuum container 11 to prevent such a phenomenon that the transmissivity of light is reduced and becomes unstable by the adhesion of a reaction product to the surface of the glass 13.

Description

【発明の詳細な説明】 産業上の利用分野 この発明はドライエツチング装置に関するものである。[Detailed description of the invention] Industrial applications This invention relates to a dry etching device.

従来例の構成とその問題点 従来のドライエツチング装置は、第1図にその具体的構
成を示すように、真空容器1に図示されない処理ガス供
給手段がガス導入口2をもって連結され、また図示され
なh排気手段が排気口3をもって連結され、上記真空容
器lの内部には、上部電極4と、試料5の支持台を兼ね
る下部電極6とが設けられて両電極間を反応室7とし、
両電極4.6のいずれか一方には高周波電源8が接続さ
れテオシ、試料5をエツチング中のプラズマに対し、ビ
ューイングボート9に設けられたガラス1゜を通して、
プラズマ光を検出して分光分析によるエツチングプロセ
スのモニタリンy、R点検tfJ1r:行い、あるーは
、ガラス1oを通してプラズマや試料5に光を照射する
仁とにょシ、プラズマ状態や試料5各面の状態を変化さ
せてエツチング特性の向上を図っていた。
Structure of a conventional example and its problems In a conventional dry etching apparatus, as shown in FIG. An exhaust means is connected through an exhaust port 3, and inside the vacuum container 1, an upper electrode 4 and a lower electrode 6 which also serves as a support for the sample 5 are provided, and a reaction chamber 7 is formed between the two electrodes.
A high frequency power source 8 is connected to either one of the electrodes 4.6, and the plasma that is etching the sample 5 is passed through a glass 1° provided in the viewing boat 9.
Monitoring of the etching process by detecting plasma light and spectroscopic analysis. The etching characteristics were improved by changing the conditions.

しかしながら上記のような構成では、試料5をエツチン
グする際に生ずる反応生成物等がガラス10の表面に付
着堆積するため、ガラス1oの光の透過率が不安定かつ
減少し、たとえば光を検出して分光分析の上エツチング
終点検出を行なう際や、光を照射してエツチング機構を
向上させる際に良好な再現性が得られないという欠点を
有していた。
However, in the above configuration, reaction products generated when etching the sample 5 adhere to and accumulate on the surface of the glass 10, making the light transmittance of the glass 1o unstable and decreasing. This method has the disadvantage that good reproducibility cannot be obtained when detecting the etching end point using spectroscopic analysis or when improving the etching mechanism by irradiating light.

発明の目的 この発明の目的は、エツチング中に生ずる反応生成物等
がビューイングポートの透光板に付着することを防ぎ、
透光板を通して行なう光の検出や、光の照射を再現性良
く行なえるドライエツチング装置を提供することである
Purpose of the Invention The purpose of the present invention is to prevent reaction products generated during etching from adhering to the transparent plate of the viewing port;
An object of the present invention is to provide a dry etching device capable of detecting light through a transparent plate and irradiating light with good reproducibility.

発明の構成 この発明のドライエツチング装置は、耐プラズマ性材料
からなるメツシュ材を、透光板と反応室の間に挿入した
ことを特徴とし、透光板表面に反応生成物が付着して光
の透過率が減少かつ不安定となることを防ぐ効果を有す
るものである。
Structure of the Invention The dry etching apparatus of the present invention is characterized in that a mesh material made of a plasma-resistant material is inserted between the light-transmitting plate and the reaction chamber, so that reaction products adhere to the surface of the light-transmitting plate and prevent light. This has the effect of preventing the transmittance from decreasing and becoming unstable.

実施例の説明 この発明の一実施例を第2図ないし第4図を用いて説明
する。第2図はドライエツチング装置の要部斜視図であ
る。11は真空容器であシ、この真空容器11には外部
に図示されない処理ガス供給手段と排気手段が連結され
、また真空容器11の内部には、図示されない上部電極
と下部電極が設けられ、両、電極のいずれか一方に図示
されない高周波電源を接続することにより、両電極間は
下部電極に設置された試料に対するエツチング反応室と
なる。12は真空容器11の一部に設けられたビューイ
ングボート、13はガラス、14は耐プラズマ性を有す
るたとえばステンレス鋼からなるメツシュ材である。反
応室でエツチングが行なわれている際、生じた反応生成
物等は、ビューイングポート12の途中に設けられたメ
ツシュ材14に吸着され、ガラス13の内面は汚される
ことがない。したがって、本実施例によれば、ガラス1
3の光の透過率は一定に保たれるため、光の検出や照射
を安定に再現性良く行なうことが可能である。
DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 2 to 4. FIG. 2 is a perspective view of essential parts of the dry etching apparatus. Reference numeral 11 denotes a vacuum container, and a processing gas supply means and an exhaust means (not shown) are connected to the outside of the vacuum container 11. Also, an upper electrode and a lower electrode (not shown) are provided inside the vacuum container 11, and both By connecting a high frequency power source (not shown) to one of the electrodes, the space between the two electrodes becomes an etching reaction chamber for the sample placed on the lower electrode. 12 is a viewing boat provided in a part of the vacuum vessel 11, 13 is glass, and 14 is a mesh material having plasma resistance and made of stainless steel, for example. When etching is performed in the reaction chamber, reaction products and the like generated are adsorbed by the mesh material 14 provided midway through the viewing port 12, so that the inner surface of the glass 13 is not contaminated. Therefore, according to this embodiment, the glass 1
Since the light transmittance of No. 3 is kept constant, it is possible to stably perform light detection and irradiation with good reproducibility.

たとえば分光分析による終点検出において、従来の構成
では、第3図に示すように、同一材質試料のエツチング
を連続的に行なうとガラス13内面への反応生成物の付
着量の増加に伴ってエツチング終点のスペクトル強度は
減少するが(曲線へ参照)、本実施例によれば、第4図
に示すように、ガラス13内面への付着物はほとんどな
く、このため、終点のスペクトル強度は連続的なエツチ
ングに対して一定に保たれ(曲線B参照)、再現性良く
かつ信頼性の高い終点検出が可能である。ただし、第3
 、4図においては、Mエツチング条件として、処理ガ
スccz、 oガス流量208CCΔ(、真空度0.1
0 Torr 、高周波電源バ’7−120Wトーiル
。第3図において、Tよ、 ’T2 * T3 * T
4 e T5は各試料ごとのエツチング時間を示す。
For example, when detecting the end point by spectroscopic analysis, in the conventional configuration, as shown in FIG. However, according to this example, as shown in FIG. 4, there is almost no deposit on the inner surface of the glass 13, and therefore the spectral intensity at the end point is continuous. It is kept constant against etching (see curve B), allowing for highly reproducible and reliable end point detection. However, the third
, 4, the M etching conditions are processing gas ccz, o gas flow rate 208CCΔ(, degree of vacuum 0.1
0 Torr, high frequency power supply bar'7-120W Torr. In Figure 3, T, 'T2 * T3 * T
4e T5 indicates the etching time for each sample.

なお、上記実施例においては、メツシュ材14をビュー
イングボート12の途中に設けたが、ビューイングボー
ト12に真空保持用ガスケットを用する場合は、ガスケ
ット中心部をメツシー構造トシテ、上記メツシュ材14
の機能を持たせてもよ−。
In the above embodiment, the mesh material 14 was provided in the middle of the viewing boat 12, but when a vacuum holding gasket is used in the viewing boat 12, the mesh material 14 is provided at the center of the gasket with a mesh structure.
It is also possible to have this function.

発明の効果 この発明のドライエツチング装置によれば、透光板を通
して行なう光検出や光照射等の再現性を高めることがで
きるという効果が得られる。
Effects of the Invention According to the dry etching apparatus of the present invention, it is possible to obtain the effect that the reproducibility of light detection, light irradiation, etc. performed through a transparent plate can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

A1図は従来のドライエソナング装はの概略断面図、第
2図はこの発明の一′月柿例の・要部斜視図、第3図は
従来例におけるエツチング終点検出用スペクトル強度図
、第4図は本実施例におけるエツチング終点検出用スペ
クトル強度図である。
Figure A1 is a schematic cross-sectional view of a conventional dry etching device, Figure 2 is a perspective view of the main part of a persimmon example of the present invention, Figure 3 is a spectrum intensity diagram for detecting the end point of etching in the conventional example, and Figure 4. is a spectral intensity diagram for detecting the end point of etching in this example.

Claims (1)

【特許請求の範囲】[Claims] 真空容器と、この真空容器に連接した処理ガス供給手段
と、前記真空容器に連接した排気手段と、前記真空容器
内で相対向配置した一対のプラズマ発生用電極と、これ
ら両電極間に高周波i!王を印加する高周波電源と、前
記真空容器に設けられ前記両電極間反応室からのプラズ
マ光を採シ出すための透光板をもつビューイングボート
と、前記透光板の前記反応室側に配設されて反応生成物
の透光板への付着を防止する耐プラズマ性メツシュ材と
を備えたドライエツチング装置。
A vacuum vessel, a processing gas supply means connected to the vacuum vessel, an exhaust means connected to the vacuum vessel, a pair of plasma generation electrodes disposed opposite to each other within the vacuum vessel, and a high frequency i ! a viewing boat provided in the vacuum vessel and having a transparent plate for extracting plasma light from the reaction chamber between the electrodes; and a viewing boat provided on the reaction chamber side of the transparent plate. A dry etching device comprising a plasma-resistant mesh material disposed to prevent reaction products from adhering to a transparent plate.
JP14143283A 1983-08-01 1983-08-01 Dry etching apparatus Pending JPS6033366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14143283A JPS6033366A (en) 1983-08-01 1983-08-01 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14143283A JPS6033366A (en) 1983-08-01 1983-08-01 Dry etching apparatus

Publications (1)

Publication Number Publication Date
JPS6033366A true JPS6033366A (en) 1985-02-20

Family

ID=15291831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14143283A Pending JPS6033366A (en) 1983-08-01 1983-08-01 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS6033366A (en)

Similar Documents

Publication Publication Date Title
JP4162773B2 (en) Plasma processing apparatus and detection window
KR100545034B1 (en) Plasma processing apparatus and method for processing substrate
JP2000077395A5 (en)
JPS6056431B2 (en) plasma etching equipment
KR940010866A (en) Microwave Plasma Treatment System and Processing Method
KR20020013905A (en) Plasma processing device, window member for the plasma processing device and electrode plate for the plasma processing device
JP4303499B2 (en) Chemical agent detection device
JPS6033366A (en) Dry etching apparatus
JPS60218846A (en) Dry etching apparatus
JPS588743B2 (en) Gas/humidity sensor
JPS5615044A (en) Plasma cleaning method
JPS5946031A (en) Plasma treating device
JPH029121A (en) Plasma etching apparatus
US5545376A (en) Drying method and apparatus for infrared analysis of aqueous samples
JPS63142634A (en) Manufacture of semiconductor
JPS6236546A (en) Analyzer
JPS6075588A (en) Spattering and etching apparatus furnished with heating mechanism
JPH0430519A (en) Treating apparatus of surface of substrate
JPS62179117A (en) Plasma processor
JPH0837175A (en) Contamination measuring method
JPH09330917A (en) Plasma light detecting window for plasma treating apparatus
JPS6159833A (en) Plasma treater
JPH0241900B2 (en)
JPS635526A (en) Dry etching device
JPH02224330A (en) Peep hole of automatic etching termination detector