JPS6159833A - Plasma treater - Google Patents
Plasma treaterInfo
- Publication number
- JPS6159833A JPS6159833A JP18051084A JP18051084A JPS6159833A JP S6159833 A JPS6159833 A JP S6159833A JP 18051084 A JP18051084 A JP 18051084A JP 18051084 A JP18051084 A JP 18051084A JP S6159833 A JPS6159833 A JP S6159833A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- electrode
- plasma
- absorbent material
- discharge space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、プラズマ処理袋に1こ係り、特にエツチング
ガスに塩素を含んだガスを用いて試料をプラズマエツチ
ングするのに好適なプラズマ処理装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a plasma processing bag, and particularly to a plasma processing apparatus suitable for plasma etching a sample using a gas containing chlorine as an etching gas. It is something.
エツチングガス番こ塩素を含んだガスを用いて試料をプ
ラズマエツチングするプラズマ処理袋Uとしては、例え
ば、特開昭57−185985号公報に記載のような、
試料が首れる複数の凹部を一つの面に有する石英プレー
トと、試料と同じ材質から作られ凹部のおのおのの中に
ユかれ石英プレートの面のレベルよりも低く、かつ試料
と同じか若しくは大きな寸法を有する円板と、試料と同
じ材料から作られ石英プレートの周辺部に置かれた縁部
材とより成る電極を備えた装置が知られている。As the plasma processing bag U for plasma etching a sample using a gas containing chlorine, for example, a plasma processing bag U such as that described in Japanese Patent Application Laid-open No. 185985/1985 is used.
A quartz plate that has multiple recesses on one surface in which the specimen can be placed, and a quartz plate that is made of the same material as the specimen and that is located in each of the recesses and is lower than the level of the surface of the quartz plate and has dimensions that are the same or larger than the specimen. A device is known which comprises an electrode consisting of a disc having a quartz plate and a rim made of the same material as the sample and placed around the periphery of the quartz plate.
この装置は.エッチングガスの均一性を改善することを
目的としたもので、サイドエツチングの抑制については
認識を有していない。This device is. The purpose is to improve the uniformity of etching gas, and there is no awareness of suppressing side etching.
本発明の目的は.エッチングガスに塩素を含んだガスを
使用して試料をプラズマエツチングする際に生じるサイ
ドエツチングを抑制できるプラズマ処理装匝を提供する
ことにある。The purpose of this invention is. It is an object of the present invention to provide a plasma processing cassette capable of suppressing side etching that occurs when plasma etching a sample using a gas containing chlorine as an etching gas.
本発明は、塩素を含んだガスのガスプラズマにさらされ
る場所に塩素ラジカル吸収材を設けたことを特徴とする
もので、サイドエ・Iチング後のガスプラズマ中の塩素
ラジカル(以下、Crと略)濃度の増加を抑制すること
でサイドエ・ノチングな抑制しようとしたものである。The present invention is characterized in that a chlorine radical absorber is provided at a location exposed to gas plasma of a chlorine-containing gas, and chlorine radicals (hereinafter abbreviated as Cr) in gas plasma after side etching are ) This is an attempt to suppress side etching by suppressing the increase in concentration.
本発明の一実施例を第1図、第2図により説明する。 An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
第1図で、処理室10には、この場合、対向電極11と
電極12とが放電空間13を有し上下方向に対向して平
行に内設されている。対向1111内部には、ガス分散
室14が形成されると共に、放電空間13にm8図して
ガス放出孔15が多数穿設されている。エツチングガス
源(図示省略)に一端を連結されたガス供給管16の他
端は、ガス分散室14#二連通して対向IE極1工に連
結されている。対向電極11は、この場合、接地されて
いる。ガス供給管16には、バルブ17が設けられてい
る。電極12の放電空間13側面には、例えば、石英プ
レート1Bが載置されていいる。電極121こは、電源
、例えば、高周波電源19が接続され高周波電源19は
接地されている。m1図、f52図暑こ示すように、ガ
スプラズマにさらされる場所、この場合は、電極12の
放電空間13側面にCla吸収吸収材膜けられている。In FIG. 1, in this case, a counter electrode 11 and an electrode 12 are provided in a processing chamber 10, having a discharge space 13, and facing each other in the vertical direction in parallel. A gas dispersion chamber 14 is formed inside the opposing portion 1111, and a large number of gas discharge holes 15 are formed in the discharge space 13 at a distance of m8. One end of the gas supply pipe 16 is connected to an etching gas source (not shown), and the other end thereof communicates with the gas dispersion chamber 14#2 and is connected to the opposing IE electrode 1. The counter electrode 11 is grounded in this case. The gas supply pipe 16 is provided with a valve 17 . For example, a quartz plate 1B is placed on the side surface of the discharge space 13 of the electrode 12. A power source, for example, a high frequency power source 19 is connected to the electrode 121, and the high frequency power source 19 is grounded. As shown in Figures M1 and F52, a Cla absorbing material film is formed on the area exposed to gas plasma, in this case, on the side of the discharge space 13 of the electrode 12.
Cr吸収材mの形状は、この場合、円板であり、電極1
2の中心を略中心として設けられている。Cr吸収材加
の面のレベルは石英プレート18の面のレベルと略同−
である。CJ’吸収材頒は、Crを吸収しやすい、例え
ば、Si、 M、 C等で形成され、この場合は、S
iで形成されている。なお、処理室10には、真空排気
系21が連結されている。In this case, the shape of the Cr absorber m is a disk, and the shape of the electrode 1
It is provided approximately centered on the center of 2. The level of the surface of the Cr absorbing material is approximately the same as the level of the surface of the quartz plate 18.
It is. The CJ' absorbing material is made of materials that easily absorb Cr, such as Si, M, and C. In this case, S
It is formed by i. Note that a vacuum evacuation system 21 is connected to the processing chamber 10.
第1図、第2図で、処理室10内Iこは、外部より公知
の搬送手段(図示省略)により、この場合は、8枚の試
料、例丸ば、AJ、 All −1〜2チSi、 IJ
−3’It Co −1〜2%8i 等で形成された
試料nが搬入され、それぞれ電極120戦置位置に被処
理面を上向きとして載置される。その後、例えば、処理
室10内は、真空排気系211こより所定圧力まで減圧
排気される。その後.エッチングガス源からガス供給管
16.バルブ17を介してガス分散室14に所定流量で
供給されたCCj?、、 BC!’、、 C!!、等の
塩素を含んだガスがガス放出孔15より放電空flrJ
13に試料xに向って放出される。この放出されたエツ
チングガスは真空排気系21により所定流量で処理室1
0外へ排気され、これにより処理室lO内は、所定の工
、チング圧力に調節される。その後、高周波電源19よ
り所定の高周波電力なgtiuに印加することで放電空
間13には、グロー放電が生じ、これによりエツチング
ガスはプラズマ化される。このガスプラズマにより試料
nの被処理面は、エツチングされる。ジャストエッチ後
、被エツチング材がな(なるため、ガスプラズマ中のc
l”i度が増加しようとすA、 L/かし、この場合は
、Cr吸収材加に吸収されるためガスプラズマ中のcI
!”a度の増加は抑制され、逆に減少するようになる。In FIGS. 1 and 2, the inside of the processing chamber 10 is transported from the outside by a known conveying means (not shown), in this case eight samples, for example, round, AJ, All-1 to 2 samples. Si, IJ
Samples n formed of -3'It Co -1 to 2% 8i or the like are carried in and placed at the positions where the electrodes 120 are placed, with the surface to be treated facing upward. Thereafter, for example, the inside of the processing chamber 10 is evacuated to a predetermined pressure by the evacuation system 211. after that. Gas supply pipe 16 from etching gas source. CCj? supplied to the gas distribution chamber 14 via the valve 17 at a predetermined flow rate. ,, BC! ',, C! ! , etc. are discharged from the gas discharge hole 15 into the discharge space flrJ.
13, it is emitted toward the sample x. This released etching gas is pumped into the processing chamber 1 at a predetermined flow rate by the vacuum exhaust system 21.
As a result, the inside of the processing chamber IO is adjusted to a predetermined processing pressure. Thereafter, by applying a predetermined high frequency power gtiu from the high frequency power supply 19, a glow discharge is generated in the discharge space 13, whereby the etching gas is turned into plasma. The surface of sample n to be processed is etched by this gas plasma. After just etching, there is no material to be etched.
In this case, the cI in the gas plasma increases because it is absorbed by the Cr absorber.
! ``The increase in a degree is suppressed, and on the contrary, it begins to decrease.
なお、Cr吸収材加を設けない場合は、試料nの周辺部
では、電界集中が強いため、エツチングされたパターン
側壁面に何日したC、 Si等が分解されてパターン側
壁面が露出し、c I!*と叉応鴨てサイドエッチが発
生するようになる。Note that when the Cr absorbing material is not added, the electric field concentration is strong in the peripheral area of sample n, so that C, Si, etc. that have remained on the etched pattern side wall surface are decomposed and the pattern side wall surface is exposed. C I! *In contrast, side etch will occur.
本実施例では次のような効果を得ることができる。In this embodiment, the following effects can be obtained.
(1) ジャストエッチ後パターン側壁面が露出して
もガスプラズマ中のCI!*濃度の増加が抑制されるた
め、サイドエツチングを抑制できる。(1) CI in gas plasma even if the pattern sidewall is exposed after just etching! *Since the increase in density is suppressed, side etching can be suppressed.
(2) サイドエツチングを抑制できるため、オーバ
エツチング時間を長々できSi残渣1M残渣を除去する
ことができる。(2) Since side etching can be suppressed, overetching time can be extended and 1M Si residue can be removed.
(3)サイドエツチングを抑制できるため、高周波電力
、エツチング圧力.エッチングガス流量等のエツチング
パラメータの最適条件範囲が広がる。(3) Side etching can be suppressed by using high frequency power and etching pressure. The range of optimal conditions for etching parameters such as etching gas flow rate is expanded.
なお、本実施例では、Cr吸収材を電極の放電空間側面
に設けているが、C!!*吸収材を設ける場所は、ガス
プラズマにさらされる場所であれば何所でも良(、例え
ば、対向電極の放電空間側面や、放電空間に対応する処
理室内壁や、場合によっては放電空間に設けても良い。In this example, the Cr absorbing material is provided on the side surface of the discharge space of the electrode, but C! ! *The absorbing material can be installed anywhere as long as it is exposed to gas plasma (for example, on the side of the discharge space of the counter electrode, on the wall of the processing chamber corresponding to the discharge space, or in some cases, it can be installed in the discharge space). It's okay.
本発明は、以上説明したように、塩素を含んだガスのガ
スプラズマにさらされる場所にCr吸収材を設けたこと
で、ジャストエッチ後のガスプラズマ中のCI!4濃度
の増加を抑制できるので、サイドエツチングを抑制でき
るという効果がある。As explained above, in the present invention, by providing a Cr absorbing material at a location exposed to gas plasma of a gas containing chlorine, the CI in the gas plasma after just etching is reduced. Since the increase in the 4 concentration can be suppressed, side etching can be suppressed.
第1図は、本発明によるプラズマ処理袋δの一実施例を
示す縦断面図、第2図は、m1図の電極の平面図である
。
13・・・・・・放電空間、加・・・・・・cl!”吸
収材才1図FIG. 1 is a longitudinal sectional view showing an embodiment of the plasma processing bag δ according to the present invention, and FIG. 2 is a plan view of the electrode shown in FIG. m1. 13...discharge space, addition...cl! ``Absorbent material size 1 figure
Claims (1)
をプラズマ化して試料をエッチングする装置において、
前記ガスプラズマにさらされる場所に塩素ラジカル吸収
材を設けたことを特徴とするプラズマ処理装置。1. In an apparatus that uses a gas containing chlorine as an etching gas and turns the gas into plasma to etch a sample,
A plasma processing apparatus characterized in that a chlorine radical absorber is provided at a location exposed to the gas plasma.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18051084A JPS6159833A (en) | 1984-08-31 | 1984-08-31 | Plasma treater |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18051084A JPS6159833A (en) | 1984-08-31 | 1984-08-31 | Plasma treater |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6159833A true JPS6159833A (en) | 1986-03-27 |
Family
ID=16084506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18051084A Pending JPS6159833A (en) | 1984-08-31 | 1984-08-31 | Plasma treater |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6159833A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489518A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Parallel flat board electrode type plasma etching device |
JPH01253238A (en) * | 1988-04-01 | 1989-10-09 | Hitachi Ltd | Plasma processor |
JPH07284871A (en) * | 1994-04-12 | 1995-10-31 | Matsumuragumi:Kk | Method and device for reinforcing bar cage |
WO1998006128A1 (en) * | 1996-08-07 | 1998-02-12 | Hitachi, Ltd. | Dry etching method and device used for the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846638A (en) * | 1981-09-14 | 1983-03-18 | Toshiba Corp | Reactive ion etching device |
JPS59121843A (en) * | 1982-12-27 | 1984-07-14 | Tokyo Daigaku | Dry etching method |
-
1984
- 1984-08-31 JP JP18051084A patent/JPS6159833A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846638A (en) * | 1981-09-14 | 1983-03-18 | Toshiba Corp | Reactive ion etching device |
JPS59121843A (en) * | 1982-12-27 | 1984-07-14 | Tokyo Daigaku | Dry etching method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489518A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Parallel flat board electrode type plasma etching device |
JPH01253238A (en) * | 1988-04-01 | 1989-10-09 | Hitachi Ltd | Plasma processor |
JPH07284871A (en) * | 1994-04-12 | 1995-10-31 | Matsumuragumi:Kk | Method and device for reinforcing bar cage |
WO1998006128A1 (en) * | 1996-08-07 | 1998-02-12 | Hitachi, Ltd. | Dry etching method and device used for the same |
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