JPS6075588A - Spattering and etching apparatus furnished with heating mechanism - Google Patents

Abstract

PURPOSE:To obtain the titled apparatus capable of heating efficiently and uniformly a material to be treated and carrying out the uniform etching in a short time by constitution wherein the material to be treated held on an electrode plate is heated by radiation through holes or meshes which are provided to another electrode plate opposite to the material. CONSTITUTION:A jig 20 for holding a material to be treated on an electrode plate 3 is fixed in a preceding treating chamber 10 which is a hermetic reaction chamber, and a high-frequency voltage is impressed between the electrode plate 3 and an opposite electrode plate 15 with a high-frequency electric power source 6. A gas is introduced from a gas introducing port 8, and the inside of the chamber 10 is evacuated from a gas discharge port 9 to reduce the pressure. Said material to be treated is then etched as the pretreatment for the spattering in a spattering chamber 11. In this case, said electrode 15 is made meshy or perforated, and a heating lamp 7 is provided there-under with a protective quartz plate 16 in-between. The material to be treated which is held opposite to said electrode 15 is heated through the meshes or holes of the electrode 15. The material to be treated is heated rapidly and uniformly in this way, and the uniform spattering and etching can be carried out in a short time.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] Processed object by the fumumonryoshatsuta ettender device -1-
A1 This is a sputter etching apparatus equipped with a heating mechanism that is suitable for efficiently and uniformly heating the object to be processed and thereby achieving an even surface etching state when etching a small object.

Sputter etching is performed at a vacuum level of 10 Pa to 1
0 Pa, a high-frequency wave is applied between two electrodes installed inside the gas to turn the gas into plasma, and ions accelerated by an electric field generated near the target electrode where the object to be processed is placed are incident on the object to be processed. Let me show you the nigage device.

Two plate-shaped electrodes are arranged facing each other, and a workpiece 5 is placed on one electrode plate 3 to perform sputter etching. At this time, the object to be processed 5 is heated for the purpose of releasing gas molecules adhering to the object to be processed 5 and improving the etching rate.

Conventionally, a flat electrode plate used in a sputter etching apparatus is a plate-like plate without holes, etc., and is placed between an electrode plate 3 and a counter electrode plate 4. In order to heat the heated object 5, the entire reaction chamber 1 must be heated, or even parts that do not need to be heated, such as the electrode plate 3 and the holder jig on which the object 5 is mounted, are heated. This requires a long heating time, and it is difficult to heat the etched surface sufficiently. In addition, 2 is a heater, 6 is a high frequency power supply, 8 is a gas inlet, 9 is an exhaust port, arrow A is a gas introduction direction, and arrow B is an exhaust direction. There is also a method of heating between the electrode plates with a heat lamp T, etc., as shown in Figure 2, but the distance between the electrode plates is generally several meters to several tens of meters, and if the electrode plates are large. However, it has disadvantages such as a temperature difference between the center and the outer periphery.

Figure 3 shows the relationship between the temperature of the object to be processed (wafer temperature) and the etching rate. The results show that the temperature of the silicon wafer is kept constant and the temperature of the silicon wafer is changed, and etching is performed with oxygen.It can be seen that the etching rate has a very high temperature dependence. Therefore, the uniformity of etching was very poor in the conventional apparatus which caused a temperature difference in the object to be processed. In addition, the residue generated when the object to be processed is etched adheres to the counter electrode plate, and is sputtered onto the object again, turning into foreign matter and turning the object into a defective product (2). It is desirable to provide a sputter etching device with a heating mechanism that shortens the heating time and improves the uniformity of etching by uniformly heating. This is thought to be because the electrode plates placed in between were interfering with the heating of the object to be processed.

In order to heat the object to be processed efficiently and uniformly, it is sufficient to place a heater near the object to heat it directly, but placing the heater between the electrode plates This makes etching difficult, and the heater is also etched. Also, heating from the back side of the electrode plate = 3- is inefficient.

Therefore, the present invention solves the problems of the conventional method by focusing on the fact that most of the heating effect on objects in vacuum is due to radiation.

First, a heater for heating the object to be processed is provided in parallel with the electrode plate on the opposite side of the object.

At this time, the object to be processed can be heated efficiently and uniformly by making the electrode plate mesh-like or in a shape with holes so that the radiant heat from the heater can directly propagate to the object to be processed. With an umbrella, the result will be uniform.

In this example, a light-receiving component of an optical sensor is manufactured, and heating and etching are performed as pre-treatments when forming an amorphous silicon film on a glass substrate by sputtering.

The characteristics of an amorphous silicon film are the cleanliness and temperature of the surface of the glass substrate during sputtering.

It largely depends on the quality of the vacuum. Therefore, 4- As a pre-treatment, the FC glass substrate is heated and uniformly etched for the purpose of stabilizing the film quality and degassing various gas molecules attached to the substrate surface that deteriorate the quality of the vacuum during sputtering. is required to do so.

In this embodiment, the present invention is applied to a sputter etching unit of a sputtering apparatus equipped with a pretreatment sputter etching apparatus.

This embodiment is comprised of three chambers: a pretreatment chamber 10 for heating and sputter etching, a sputtering chamber 11, and a take-out chamber 12, and each chamber is connected via a gate pulp 13, 14. The holder jig 20 is loaded with a glass substrate (not shown) as an object to be processed, and is transported to the preprocessing chamber 10 by a transport mechanism (not shown). After being sequentially sent to the sputtering chamber 11 and subjected to various treatments, it is taken out from the take-out chamber 12. gate valve 13,
141 is used to completely shut off each chamber, and opens and closes when the holder jig 2° passes.

The pretreatment chamber 10 is comprised of an electrode plate 3 for sputter etching, a high frequency power source 6, a mesh counter electrode plate 15, a heating run rough 1 quartz plate 16 for heating the glass substrate, and the like. The holder jig 20 carrying the glass substrate is attached to the electrode plate 3 with the surface to be sputtered facing downward.

The electrode placed opposite the electrode plate 3 is a mesh-shaped counter electrode plate 15, and a heating lamp 7 is provided below this plate facing the glass substrate. The heating 2 pump 7 can heat the glass substrate through the mesh-like holes of the mesh-like counter electrode plate 15.

A quartz plate 1 is placed between the mesh counter electrode plate 15 and the heating lamp 70.
6 is placed to prevent etching and contamination of the heating lamp I, and to prevent leftovers from falling onto the heating lamp T during etching of the glass substrate. Furthermore, the quartz plate 16 can be easily slid in and out. In addition,
1T is a cylinder target, 18 is a substrate electrode plate, 19 is a target electrode plate, and arrow C is a holder jig conveyance direction.

As described above, according to the present invention, the sputter etching surface, which is also the surface to be spattered, of the glass substrate can be heated efficiently and uniformly through the counter electrode plate, thereby improving the color and thereby achieving uniform etching. Most of the residue generated during etching passes through the mesh counter electrode plate 9 and falls onto the quartz plate 18, so the probability that the residue will be sputtered onto the glass substrate again is reduced. Also, quartz plate I
The remaining pickles that have accumulated on B can be easily removed, resulting in excellent maintainability.

In this embodiment, the counter electrode plate is mesh-shaped, but good results can also be obtained by using a plate-shaped electrode plate with holes for transmitting the light from the heating lamp. In addition, in order to equalize the amount of heating and simp light after passing through the electrode plate, the processing surface of the workpiece placed on one side of the hole made at each position of the electrode plate is placed on the other side opposite to this. Since direct heating can be performed using a heat lamp installed to heat through the mesh or holes of the electrode plate with holes, the object to be processed can be heated efficiently and uniformly in a short time. 7- This has the effect of improving etching uniformity.

[Brief explanation of drawings]

Fig. 1 is a front sectional view of a conventional sputter etching device with a heating mechanism, Fig. 2 is a front sectional view of a conventional sputter etching device with a heating mechanism using a heating lamp, and Fig. 3 is a diagram showing changes in etching temperature and etching speed. A graph showing the relationship, FIG. 4, is a front sectional view of a sputtering apparatus with a sputter etching apparatus for pretreatment according to an embodiment of the present invention. 3: electrode plate, 5: 9 object to be processed, 6: φ high frequency power supply, T: ◆heating lamp, 8: gas inlet, 9: gas exhaust port, 10...Pretreatment chamber, 11s
--- Sputtering chamber, 12... Take-out chamber, 15... Fist/mesh counter electrode plate, 16. Banlong medium quartz plate, 20 Fist...
・Holder jig. 8- Figure 1 Figure 2

Claims (1)

[Claims] Inside the sealed reaction chamber, there is a PA machine r4 for heating the vIJ to be processed, and two planar electrode plates placed opposite each other. After evacuating the room while heating, etching gas is introduced and when the pressure reaches a predetermined level, a voltage is applied between the electrode plates to etch the object. One of the electrode plates is an electrode plate with a mesh shape or holes, and an object to be processed is placed facing the electrode plate with a mesh shape or holes on a flat electrode plate placed opposite to this electrode plate. A sputter etching apparatus with a heating mechanism, characterized in that the heating mechanism is installed at a position where heating can be performed through the mesh or holes of an electrode plate having a mesh shape or holes.