JPS60218846A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS60218846A
JPS60218846A JP7406884A JP7406884A JPS60218846A JP S60218846 A JPS60218846 A JP S60218846A JP 7406884 A JP7406884 A JP 7406884A JP 7406884 A JP7406884 A JP 7406884A JP S60218846 A JPS60218846 A JP S60218846A
Authority
JP
Japan
Prior art keywords
light
vacuum container
transmitting
end point
transmitting plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7406884A
Other languages
Japanese (ja)
Inventor
Yuichiro Yamada
雄一郎 山田
Masuo Tanno
丹野 益男
Kazuyuki Tomita
和之 富田
Shinichi Mizuguchi
水口 信一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7406884A priority Critical patent/JPS60218846A/en
Publication of JPS60218846A publication Critical patent/JPS60218846A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a reaction product or the like from adhering on a light- transmitting plate of a light-transmitting window and to enable the detection or radiation of light to be performed with good reproducibility, by interposing a cooling trap between the light-transmitting plate and the reaction chamber. CONSTITUTION:When etching is carried out in a reaction chamber consisting of a vacuum container 11, any reaction product or the like produced thereby is adsorbed, before it reaches the inner face of a light-transmitting plate (glass) 13, by a cooling trap 14 in which cooling fluid flows and which is provided midway to a light-transmitting window 12, so that the inner face of the light-transmitting plate 13 is not contaminated by such a product. Accordingly, the light transmittance of the plate 13 is maintained constant, and therefore detection or radiation of light can be carried out stably. In the end point detection by spectro-chemical analysis, the end point spectral strength is maintained constant thereby the end point detection is enabled to be performed with good reproducibility and high reliability.

Description

【発明の詳細な説明】 産業上の利用分野 この発明はドライエツチング装置に関するものである。[Detailed description of the invention] Industrial applications This invention relates to a dry etching device.

従来例の構成とその問題点 従来のドライエツチング装置は、第1図にその具体的構
成を示すように、真空容器1に図示されない処理ガス供
給手段がガス導入口2をもって連結され、また図示され
ない排気手段が排気口3をもって連結され、上記真空容
器1の内部には、上部電極4と、試料6の支持台を兼ね
る下部電極6とが設けられて両電極間を反応室7とし、
両電極4.6のいずれか一方には高周波電源8が接続さ
れておシ、試料6をエツチング中のプラズマに対し、透
光窓9に設けられた透光板(ガラス)10を通して、プ
ラズマ光を検出して分光分析によるエツチングプロセス
のモニタリング、終点検出を行い、あるいは、透光板(
ガラス)1oを通してプラズマや試料6に光を照射する
ことによシ、プラズマ状態や試料6各面の状態を変化さ
せてエツチング特性の向上を図っていた。
Structure of the conventional example and its problems In the conventional dry etching apparatus, as shown in the concrete structure in FIG. An exhaust means is connected through an exhaust port 3, and inside the vacuum container 1, an upper electrode 4 and a lower electrode 6 which also serves as a support for a sample 6 are provided, and a reaction chamber 7 is formed between the two electrodes.
A high frequency power source 8 is connected to either one of the electrodes 4.6, and plasma light is transmitted to the plasma etching the sample 6 through a transparent plate (glass) 10 provided in a transparent window 9. can be used to monitor the etching process by spectroscopic analysis, to detect the end point, or to detect the etching process using a transparent plate (
By irradiating the plasma and the sample 6 with light through the glass 1o, the plasma state and the state of each surface of the sample 6 were changed to improve the etching characteristics.

しかしながら上記のような構成では、試料5をエツチン
グする際に生ずる反応生成物等が透光板(ガラス)10
の表面に付着堆積するため、透光板(ガラス)1oの光
の透過率が不安定かつ減少し、たとえば光を検出して分
光分析の上エッチング終点検出を行なう際や、光を照射
してエツチング機構を向上させる際に良好な再現性が得
られず、エツチング装置として信頼性に欠けるという欠
点を有していた。
However, in the above configuration, reaction products etc. generated when etching the sample 5 are transferred to the transparent plate (glass) 10.
As a result, the light transmittance of the light-transmitting plate (glass) 1o becomes unstable and decreases.For example, when detecting light and performing spectroscopic analysis to detect the end point of etching, or when irradiating light. When improving the etching mechanism, good reproducibility could not be obtained, and the etching apparatus had the drawback of lacking reliability.

発明の目的 この発明の目的は、エツチング中に生ずる反応生成物等
が透光窓の透光板に付着することを防ぎ、透光板を通し
て行なう光の検出や、光の照射を再現性良く行なえるド
ライエツチング装置を提供することである。
Purpose of the Invention The purpose of the present invention is to prevent reaction products generated during etching from adhering to the transparent plate of the transparent window, and to enable light detection and light irradiation through the transparent plate with good reproducibility. It is an object of the present invention to provide a dry etching device that allows for dry etching.

発明の構成 この発明のドライエツチング装置は、冷却トラップを、
透光板と反応室の間に挿入したことを特徴とし、透光板
表面に反応生成物が付着して光の透過率が減少かつ不安
定となることを防ぐ効果を有するものである。
Structure of the Invention The dry etching apparatus of the present invention includes a cooling trap,
It is characterized by being inserted between the light-transmitting plate and the reaction chamber, and has the effect of preventing reaction products from adhering to the surface of the light-transmitting plate and reducing the light transmittance and making it unstable.

実施例の説明 この発明の第1の実施例を第2図ないし第4図を用いて
説明する。第2図はドライエツチング装置の要部斜視図
である。11は真空容器であシ、この真空容器11には
外部に図示されない処理ガス供給手段と排気手段が連結
され、また真空容器11の内部には、図示されない上部
電極と下部電極が設けられ、両電極のいずれか一方に図
示されない高周波電源を接続することによシ、両電極間
は下部電極に設置された試料に対するエツチング反応室
と々る。12は真空容器11の一部に設けられた透光窓
、13は透光板(ガラス)、14は図示されない冷却手
段により冷却された冷却液が内部を流れるたとえばステ
ンレスパイプからなる冷却トラップである。反応室でエ
ツチングが行なわれている際、生じた反応生成物等は、
透光板(ガラス)13の内面に達する前に透光窓12の
途中に設けられた冷却トラップ14に吸着され、透光板
(ガラス)13の内面は汚されることがない。したがっ
て、本実施例によれば、透光板(ガラス)13の光の透
過率は一定に保たれるため、光の検出や照射を安定に再
現性良く行なうことが可能である。たとえば分光分析に
よる終点検出において、従来の構成では、第3図に示す
ように、同一材質試料のエツチングを連続的に行なうと
透光板(ガラス)13内面への反応生成物の付着量の増
加に伴ってエツチング終点のスペクトル強度は減少する
が(曲線ム参照)、本実施例によれば、第4図に示すよ
うに、反応生成物が冷却トラップ14に吸着される結果
透光板(ガラス)13内面への付着物はほとんどなく、
このため、終点のスペクトル強度は連続的なエツチング
に対して一定に保たれ(曲線B参照)、再現性良くかつ
信頼性の高い終点検出が可能である。ただし、第3,4
図においては、ムlエツチング条件として、処理ガスo
014.ガス流量20 SCCM 、真空度0.10T
Orr。
DESCRIPTION OF THE EMBODIMENTS A first embodiment of the present invention will be described with reference to FIGS. 2 to 4. FIG. 2 is a perspective view of essential parts of the dry etching apparatus. Reference numeral 11 denotes a vacuum container, and a processing gas supply means and an exhaust means (not shown) are connected to the outside of the vacuum container 11. Also, an upper electrode and a lower electrode (not shown) are provided inside the vacuum container 11, and both By connecting a high frequency power source (not shown) to either one of the electrodes, an etching reaction chamber for a sample placed on the lower electrode is created between the two electrodes. 12 is a transparent window provided in a part of the vacuum container 11, 13 is a transparent plate (glass), and 14 is a cooling trap made of, for example, a stainless steel pipe, through which a cooling liquid cooled by a cooling means (not shown) flows. . When etching is carried out in the reaction chamber, the reaction products generated are
Before reaching the inner surface of the light-transmitting plate (glass) 13, it is adsorbed by the cooling trap 14 provided halfway through the light-transmitting window 12, so that the inner surface of the light-transmitting plate (glass) 13 is not contaminated. Therefore, according to this embodiment, the light transmittance of the transparent plate (glass) 13 is kept constant, so that light detection and irradiation can be performed stably and with good reproducibility. For example, when detecting the end point by spectroscopic analysis, in the conventional configuration, as shown in FIG. The spectral intensity at the etching end point decreases as the etching ends (see curve). However, according to this embodiment, as shown in FIG. )13 There is almost no deposit on the inner surface,
Therefore, the spectral intensity at the end point is kept constant during continuous etching (see curve B), making it possible to detect the end point with good reproducibility and high reliability. However, the third and fourth
In the figure, the processing gas o
014. Gas flow rate 20 SCCM, vacuum degree 0.10T
Orr.

高周波電源パワー120Wとする。第3図において、T
、l T21 T31 ”41 T5は各試料ごとのエ
ツチング時間を示す。
The high frequency power supply power is 120W. In Figure 3, T
, l T21 T31 ''41 T5 indicates the etching time for each sample.

第6図は本発明の第2の実施例におけるドライエツチン
グ装置の要部斜視図である。11は真空容器、12は透
光窓、13は透光板(ガラス)、14はたとえばステン
レスからなる冷却トラップであシ、第2図と異なる点は
、冷却トラップ14の形状である。本実施例の冷却トラ
ップ14は中心部に光の通る中空穴を設け、外壁内部に
冷却水の流路を設けた形状を有しておシ、反応生成物は
透光板(ガラス)13の内面に達する前に、冷却トラッ
プ14の中空大表面に吸着される。
FIG. 6 is a perspective view of a main part of a dry etching apparatus according to a second embodiment of the present invention. 11 is a vacuum container, 12 is a transparent window, 13 is a transparent plate (glass), and 14 is a cooling trap made of, for example, stainless steel.The difference from FIG. 2 is the shape of the cooling trap 14. The cooling trap 14 of this embodiment has a hollow hole in the center through which light passes, and a cooling water flow path inside the outer wall. Before reaching the inner surface, it is adsorbed on the large hollow surface of the cooling trap 14.

第6図は本発明の第3の実施例におけるドライエツチン
グ装置の要部断面図である。11は真空容器、12は透
光窓、13は透光板(ガラス)、14はたとえばステン
レスからなる冷却トラップでsb、第5図と異なる点は
冷却トラップ14の外形を例えばフィン状にして吸着面
積を増加させ、反応生成物の吸着をよシ効果的にしだも
のである。
FIG. 6 is a sectional view of a main part of a dry etching apparatus according to a third embodiment of the present invention. 11 is a vacuum container, 12 is a transparent window, 13 is a transparent plate (glass), and 14 is a cooling trap made of, for example, stainless steel.The difference from FIG. It increases the area and makes the adsorption of reaction products more effective.

なお、上記第1.第2及び第3の実施例においては、冷
却トラップ14を内部に冷却液を流せるようにしたもの
としたが、冷却液の代わシに冷却ガスを流しても良い。
In addition, the above 1. In the second and third embodiments, the cooling trap 14 is configured so that a cooling liquid can flow therein, but instead of the cooling liquid, a cooling gas may be allowed to flow therein.

また冷却トラップ14には例えば液体窒素を充填する方
法をとっても良い。
Alternatively, the cooling trap 14 may be filled with liquid nitrogen, for example.

発明の効果 この発明のドライエツチング装置によれば、透元板を通
して行なう光検出や光照射等の再現性を高めることによ
り、信頼性の高いエツチングを行なえる効果が得られる
Effects of the Invention According to the dry etching apparatus of the present invention, the effect of highly reliable etching can be obtained by improving the reproducibility of light detection, light irradiation, etc. performed through the transparent plate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のドライエツチング装置の概略断面図、第
2図はこの発明の第1の実施例の要部斜視図、第3図は
従来例におけるエツチング終点検出用スペクトル強度図
、第4図は第1の実施例におけるエツチング終点検出用
スペクトル強度図である。第6図は第2の実施例の要部
斜視図、第6図は第3の実施例の要部断面図である。 4.6・・・・・・電極、7・・・・・・反応室、8・
・、・・・高周波電源、11・・・・・・真空容器、1
2・・・・・・透光窓、13・・・・・・透光板(ガラ
ス)、14・・・・・・冷却トラップ。 代理人の氏名 弁理土中尾敏男 線か1名 第2図 第3図 第4図 第5図
FIG. 1 is a schematic cross-sectional view of a conventional dry etching apparatus, FIG. 2 is a perspective view of essential parts of the first embodiment of the present invention, FIG. 3 is a spectrum intensity diagram for detecting the end point of etching in the conventional example, and FIG. 4 is a spectrum intensity diagram for detecting the end point of etching in the first embodiment. FIG. 6 is a perspective view of the main part of the second embodiment, and FIG. 6 is a sectional view of the main part of the third embodiment. 4.6... Electrode, 7... Reaction chamber, 8.
...High frequency power supply, 11...Vacuum container, 1
2...Transparent window, 13...Transparent plate (glass), 14...Cooling trap. Name of agent: Patent attorney Toshio Tsuchinakao line or one person Figure 2 Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】[Claims] 真空容器と、この真空容器に連接した処理ガス供給手段
と、前記真空容器に連接した排気手段と、前記真空容器
内で相対向配置した一対のジラズマ発生用電極と、これ
ら両電極間に高周波電圧を印加する高周波電源と、前記
真空容器に設けられ前記両電極間反応室からのプラズマ
光を採シ出すための透光板をもつ透光窓と、前記透光板
の前記反応室側に配設されて反応住成物の透光板への付
着を防止する冷却トラップとを備えたドライエツチング
装置。
A vacuum container, a processing gas supply means connected to the vacuum container, an exhaust means connected to the vacuum container, a pair of electrodes for generating zirazma that are arranged opposite to each other in the vacuum container, and a high frequency voltage between these electrodes. a high-frequency power supply for applying a high frequency power, a light-transmitting window provided in the vacuum container and having a light-transmitting plate for extracting plasma light from the reaction chamber between the two electrodes, and a light-transmitting window disposed on the reaction chamber side of the light-transmitting plate. A dry etching device equipped with a cooling trap to prevent reaction components from adhering to the transparent plate.
JP7406884A 1984-04-13 1984-04-13 Dry etching apparatus Pending JPS60218846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7406884A JPS60218846A (en) 1984-04-13 1984-04-13 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7406884A JPS60218846A (en) 1984-04-13 1984-04-13 Dry etching apparatus

Publications (1)

Publication Number Publication Date
JPS60218846A true JPS60218846A (en) 1985-11-01

Family

ID=13536492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7406884A Pending JPS60218846A (en) 1984-04-13 1984-04-13 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS60218846A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050059451A (en) * 2003-12-15 2005-06-21 삼성전자주식회사 Apparatus for detecting an endpoint in substrate manufacturing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050059451A (en) * 2003-12-15 2005-06-21 삼성전자주식회사 Apparatus for detecting an endpoint in substrate manufacturing process

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