JPS6032993B2 - 半導体応力センサおよびその製造方法 - Google Patents

半導体応力センサおよびその製造方法

Info

Publication number
JPS6032993B2
JPS6032993B2 JP51119475A JP11947576A JPS6032993B2 JP S6032993 B2 JPS6032993 B2 JP S6032993B2 JP 51119475 A JP51119475 A JP 51119475A JP 11947576 A JP11947576 A JP 11947576A JP S6032993 B2 JPS6032993 B2 JP S6032993B2
Authority
JP
Japan
Prior art keywords
layer
region
piezoresistor
silicon
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51119475A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5245986A (en
Inventor
ジエームス・エフ・マーシヤル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS5245986A publication Critical patent/JPS5245986A/ja
Publication of JPS6032993B2 publication Critical patent/JPS6032993B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP51119475A 1975-10-06 1976-10-06 半導体応力センサおよびその製造方法 Expired JPS6032993B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61986675A 1975-10-06 1975-10-06
US619866 1984-06-12

Publications (2)

Publication Number Publication Date
JPS5245986A JPS5245986A (en) 1977-04-12
JPS6032993B2 true JPS6032993B2 (ja) 1985-07-31

Family

ID=24483643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51119475A Expired JPS6032993B2 (ja) 1975-10-06 1976-10-06 半導体応力センサおよびその製造方法

Country Status (7)

Country Link
JP (1) JPS6032993B2 (enrdf_load_stackoverflow)
CA (1) CA1088664A (enrdf_load_stackoverflow)
DE (1) DE2644638A1 (enrdf_load_stackoverflow)
FR (1) FR2327528A1 (enrdf_load_stackoverflow)
GB (1) GB1558815A (enrdf_load_stackoverflow)
IT (1) IT1073874B (enrdf_load_stackoverflow)
SE (1) SE414096B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211772B1 (en) 1995-01-30 2001-04-03 Hitachi, Ltd. Semiconductor composite sensor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844459A1 (de) * 1978-10-12 1980-04-24 Wacker Chemie Gmbh Verfahren zum erhoehen des schuettgewichts von siliciumdioxyd und eine verwendung des erfindungsgemaess behandelten siliciumdioxyds
JPS55102277A (en) * 1979-01-29 1980-08-05 Toshiba Corp Semiconductor pressure converter
JPS55112864U (enrdf_load_stackoverflow) * 1979-02-02 1980-08-08
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE102011006332A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211772B1 (en) 1995-01-30 2001-04-03 Hitachi, Ltd. Semiconductor composite sensor

Also Published As

Publication number Publication date
IT1073874B (it) 1985-04-17
FR2327528A1 (fr) 1977-05-06
SE414096B (sv) 1980-07-07
CA1088664A (en) 1980-10-28
JPS5245986A (en) 1977-04-12
SE7611020L (sv) 1977-04-07
DE2644638C2 (enrdf_load_stackoverflow) 1988-01-21
GB1558815A (en) 1980-01-09
FR2327528B1 (enrdf_load_stackoverflow) 1982-05-21
DE2644638A1 (de) 1977-04-07

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