JPS602947A - Method for coating resist - Google Patents
Method for coating resistInfo
- Publication number
- JPS602947A JPS602947A JP10924983A JP10924983A JPS602947A JP S602947 A JPS602947 A JP S602947A JP 10924983 A JP10924983 A JP 10924983A JP 10924983 A JP10924983 A JP 10924983A JP S602947 A JPS602947 A JP S602947A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- soln
- substrate
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
不発明はIC,LSIなどの半導体素子の製造工程で用
いるホトマスクに対するホトレジスト句イ11方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The technical field of the invention relates to a photoresist method for photomasks used in the manufacturing process of semiconductor devices such as ICs and LSIs.
従来技術と問題点
IC、LSI々fの製造には、その素子形成にホトリン
グラフィの技術が用いられている。そのu3合ホトマ“
スフが用いられるが、このホトマスクの製造にも素子裂
]1腎と同様にホトリングラフィの技術が用いられる。Prior Art and Problems In the manufacture of ICs and LSIs, photolithography technology is used to form the elements. That u3 go hotoma”
Although a fabric is used, photolithography technology is also used in the production of this photomask, similar to that used in the production of this photomask.
即ち、ガ2スノ、(板の上にスパッタによシ金趨クロム
AQ k形成し、その上にホトレジストk 亭布し、こ
のホトレジスト葡レチクル?r[1bて露光したのち現
イ2し、仄いて金部クロム膜全辺択エッナングして金J
(+クロムでバターニングしホトマスクイ〔作成するの
でめる。Namely, a metal chromium AQ layer was formed on a plate by sputtering, a photoresist layer was applied thereon, and the photoresist reticle was exposed to light. The gold part is etched on all sides of the chromium film and gold J is applied.
(+Create a photomask by buttering it with chrome.)
このよりlホトマスクの製造工程において、ホトレシス
トリQj布は従う16よpスピンコード法カ用いられて
いる。この方法は第1図の如く、回転#QI+1に固ν
ピされたチャック2にホトマスク/fl基孜3全金〃・
1クロム愈が上面となろより+c ;4V、、t7マレ
、その上にホトレジスト(Iイア;叉4′?r、滴下し
たのち、回転軸l金高速回転してホトレジスト溶液4を
金属クロム膜面上に拡は且つ余分な数音1・′l欣させ
て一様な〕9さの* ji’;% ’c−+i)るよシ
にしてbる。ところがこのJん合、ホトレジスト石J7
[叉C・てはろるイ呈1更の1占性があるため、基板周
辺までイσ布するためには滴下するホトレジスト溶液4
の牡を火除に基布される基よシはるかVこ多く1−る必
要が必ろ。このため、この方法はホトレジスト7’lN
il&かび民敢して無駄とな/)〜4゜が多いといり
欠点があった。葦たブ1−散したレジスト液が基板?、
侍面に何者するという欠点もめった。In the manufacturing process of this photomask, the photoresistive fabric Qj is used according to the 16p spin code method. This method is fixed at rotation #QI+1 as shown in Figure 1.
Photomask on pinned chuck 2 / fl base 3 all gold ・
1 chrome hole should be on the top surface +c; 4V, t7 male; after dropping photoresist (Iia; 4'?r) on top of it, rotate the rotating shaft at high speed to apply photoresist solution 4 to the metal chromium film surface. The expansion is extended upwards, and the extra few notes are made into a uniform] 9's *ji';% 'c-+i). However, in this case, photoresist stone J7
Due to the monopoly property, it is necessary to drop the photoresist solution 4 to spread it around the substrate.
It is necessary to have a lot of V 1- from the foundation that is based on the fire protection. Therefore, this method is suitable for photoresist 7'lN
There was a drawback that there were a lot of angles of ~4°. Reedab 1 - Is the sprayed resist liquid the substrate? ,
He also rarely had the disadvantage of wearing a samurai mask.
発明の目的
不発りJ4:J:土Be+ f’l=来の欠点に−み、
ホトレジスト溶液の無j憾の少ないレジスト((ゴij
’)j法をイ髭供すること?f:目的とするものでら
る。The purpose of the invention is to fail.
The photoresist solution has a very low level of resist ((goij
') To offer the J method? f: It is the purpose.
発明の41か成
そしてこの目的は本発明によれば、ホトマスク製造工4
’i VCおけるホトレジストの一一・;布方法であっ
て、−万の面に金&i !t!が形成された是板金、上
方よシ垂下した回伝憎に金わi ii5.i開が下方t
tC同くようにして取えテしたのち、該金属痕口jjを
レジスト溶液の液囲に」易融させて該雀pIr41−面
にレジスF rt4液金付着ざぜ、次いで11【)匠i
’lllをtto逗に1徹して今月h4面上の余分なレ
ジスト俗7iM ’CC成敗せ又除去すること金時hχ
とするレジストDjイ0方法′f:提供することによっ
て達成される。According to the present invention, the 41 features of the invention and this object are as follows:
'I One of the photoresists in VC; Cloth method, with gold &i on the surface of -10,000! T! This is the sheet metal that was formed, and it is the metal that hangs down from above.ii ii5. i opening is downward t
After removing it in the same manner, the metal trace is easily melted in the resist solution, and the resist F rt4 liquid gold is deposited on the surface of the resist solution.
'I'll do everything in my power to remove the extra resist vulgarity on the h4 page this month.
This can be achieved by providing a resist Dj i0 method'f.
発明の実施例
以下、不発りJ′:Ablil t”I企図面にLって
詳述する。Embodiments of the invention will be described in detail below.
第2図は本発明にょ旬レジスト(戸布方法を〜2明する
ための図でちり、同図において、10は高速回転かでさ
、且つ上方よシ垂下して設けらfした■に宿1bllは
その下91′h;に設けられた真望チャック、12はガ
ラス4反の一方の而に金か)クロム膜面上か形成きれた
ホトマスクJ旧、j、’ 、i云 13は容器、14は
レジスト溶液全それぞれ示している。Figure 2 is a diagram for explaining the present invention's new resist method. 1bll is the machining chuck installed under it at 91'h; 12 is the photomask J old, j, ', iyun, which has been formed on the chrome film surface on one side of the glass 4, and 13 is the container. , 14 indicate all resist solutions, respectively.
不実桶例は第21囚に示す如く、上方より垂下して設け
られた回転禮110の下端に固定された真全チャック1
1こホトマスク用基板12全取着させる。この場合ホト
マスク用基板12はその一方の面に形成された金属クロ
ム(jΔ12aが下に向くようにチャック11に取)7
1fする。次にこの全組りロム模り2a面にレジスト7
8液14の液面全接触させ、金属クロム膜面にレジスト
溶液全薄く付着させる。次いで該面勿しジスト浴j伎か
ら醸し、軸10を高速に自転して金属クロム719面上
の余分なレジスト溶液f ソiQ敗させ、残ったレジス
ト溶液を乾燥させて、粗金ねクロム膜面上に均一な厚さ
の薄いレジス) JI5i k形成するのである。As shown in the 21st prisoner, an example of a fuji-oke is a true chuck 1 fixed to the lower end of a rotating shaft 110 hanging down from above.
One photomask substrate 12 is completely attached. In this case, the photomask substrate 12 has metal chromium (mounted on the chuck 11 so that jΔ12a faces downward) 7 formed on one surface thereof.
1f. Next, resist 7 is applied to the 2a side of this complete ROM model.
The entire surface of the liquid 8 is brought into contact with the liquid 14, and the resist solution is completely thinly deposited on the surface of the metal chromium film. Next, the resist solution on the surface of the metal chromium 719 is removed by rotating the shaft 10 at high speed, and the remaining resist solution is dried to form a coarse gold chromium film. A thin resist with a uniform thickness is formed on the surface.
このようにレジスj HfAf形成する不笑確例は、ホ
トマスク用基板の全4クロム臆面にレジスト溶液金供給
する方法が、金piりpム膜面全下にしてレジスト溶液
に接触させ、一様な薄い族として付着させるのでその付
着−戚は基板の大きさが4’X4’乃至6j x s
Iの場合に1〜2 ccであり、従来の滴下方法では2
〜5 cc を安するのに比し外程度と少なくなる。葦
だ踏板の回転をレジスト塗布面が下になるようにしてい
るため飛散したレジスト溶液が基板裏m1に回ル込み付
着するCとも防止される。An unfavorable example of forming a resist layer HfAf in this way is that the method of supplying resist solution gold to all four chromium surfaces of a photomask substrate is such that the gold layer is brought into contact with the resist solution under the entire surface of the chromium film, and the resist solution is uniformly applied. Since it is deposited as a thin layer, the size of the substrate is 4' x 4' to 6j x s.
In the case of I, it is 1-2 cc, and in the conventional dripping method, it is 2 cc.
The amount is significantly less than ~5 cc. Since the reed treadle is rotated so that the resist coated surface is facing downward, the scattered resist solution is prevented from flowing around and adhering to the back side of the substrate m1.
発明の効呆
以上、詳細に説明したように本発明のレジスト塗布方法
はレジスト倹布面を下にしてスピンコードすることによ
ジ4共給するレジストン谷液が少Pgで良く、経済的で
あるといった効果大なるものである0Effects of the Invention As explained in detail above, the resist coating method of the present invention is economical because it spin-codes with the resist coating side facing down, so that the resist trough solution co-supplied with the diode 4 only requires a small amount of Pg. It has a great effect.0
第1図は従来のレジスト塗布方法を説り]するための図
、第2図は本発明によるレジスト塗布方法′:f:iI
兄ψ」するための図である。
南面において、10は回ij伝1浦、11は真全チャッ
ク、12はホトマスク用;・NKFj、14はレジスト
溶液をそれぞn示す。
T7j計出柘(人
富」τ)1力(1s式会社
!1ン許出願代理人
弁理± 1¥ 木 19J
升1゛P± 西舘オ゛11之
弁理士 内 出 ♀ 男
弁理士 山 口 Blづ 之Fig. 1 is a diagram for explaining the conventional resist coating method, and Fig. 2 is a diagram for explaining the resist coating method according to the present invention':f:iI.
This is a diagram for "brother ψ". On the south side, 10 indicates a total chuck, 11 indicates a full chuck, 12 indicates a photomask; NKFj, and 14 indicate a resist solution. T7j Keidetsu (human wealth) 1 power (1s type company! 1 patent application agent patent attorney ± 1 yen Thurs. 19J square 1゛P± Nishidate O゛11 Patent attorney Uchide ♀ Male patent attorney Yamaguchi Bl Zu no
Claims (1)
法で必って、一方の面に金属膜が形成された基Ifl金
、上方より545下した回法軸に金属itq而が下方に
向くようにして取>Q シたのら、粗金Ji4 j!’
f1面?レジスト浴液の液面に接励:させて該金属Q°
、−: t+ijにレジスト溶液を付所させ、次いで回
転’1tll f高通に回1法して金7:十・1土の余
分なレジスト溶液全飛散させて除去することeQテ敵と
するレジスト孕イ11方法。1. In the photoresist coating method in the photomask manufacturing process, the base Ifl gold, on which a metal film is formed on one side, must be mounted with the metal film facing downward on the rotation axis 545 degrees below the top. Q Shitanora, Kokin Ji4 j! '
F1 side? The surface of the resist bath liquid is exposed to the metal Q°.
, -: Apply the resist solution to t + ij, then rotate '1tll f Takamichi once to remove all the excess resist solution of gold 7: 1 soil and remove it. A11 method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10924983A JPS602947A (en) | 1983-06-20 | 1983-06-20 | Method for coating resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10924983A JPS602947A (en) | 1983-06-20 | 1983-06-20 | Method for coating resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS602947A true JPS602947A (en) | 1985-01-09 |
Family
ID=14505390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10924983A Pending JPS602947A (en) | 1983-06-20 | 1983-06-20 | Method for coating resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS602947A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6415650U (en) * | 1987-07-15 | 1989-01-26 | ||
US4860818A (en) * | 1987-09-21 | 1989-08-29 | Ube Industries, Ltd. | Die casting apparatus |
JPH0234263A (en) * | 1988-07-21 | 1990-02-05 | Nippon Denso Co Ltd | Apparatus and method for die casting |
US4997027A (en) * | 1988-06-10 | 1991-03-05 | Ube Industries, Ltd. | Pressing mechanism for casting apparatus |
-
1983
- 1983-06-20 JP JP10924983A patent/JPS602947A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6415650U (en) * | 1987-07-15 | 1989-01-26 | ||
US4860818A (en) * | 1987-09-21 | 1989-08-29 | Ube Industries, Ltd. | Die casting apparatus |
US4997027A (en) * | 1988-06-10 | 1991-03-05 | Ube Industries, Ltd. | Pressing mechanism for casting apparatus |
JPH0234263A (en) * | 1988-07-21 | 1990-02-05 | Nippon Denso Co Ltd | Apparatus and method for die casting |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4269935A (en) | Process of doping silver image in chalcogenide layer | |
US6656668B2 (en) | Process method of using excimer laser for forming micro spherical and non-spherical polymeric structure array | |
CN101430503B (en) | Method for removing double-layer glue for electron beam lithography stripping | |
CN110824847B (en) | Etching method for improving overlay accuracy | |
JPS602947A (en) | Method for coating resist | |
CN109119329A (en) | A kind of film plating process reducing silicon wafer warpage degree | |
CN208521130U (en) | Combine mask plate | |
JPS63216052A (en) | Exposing method | |
JPH0740543B2 (en) | Method for manufacturing semiconductor device | |
JPS6373522A (en) | Manufacture of semiconductor device | |
CN110676156A (en) | Photoetching semiconductor processing technology | |
JPH01142637A (en) | Photomask blank | |
JPH01142721A (en) | Positive type photosensitive pattern forming material and pattern forming method | |
JPS57100428A (en) | Method for photomechanical process | |
JPH02238457A (en) | Formation of thick-film resist pattern | |
JPS6236823A (en) | Resist pattern formation | |
JPS6074629A (en) | Formation of thin film pattern | |
JPS61263223A (en) | Manufacture of semiconductor device | |
JPS60160614A (en) | Resist coating method and apparatus therefor | |
SU1549366A1 (en) | Method of producing photographic mask | |
JPS58122726A (en) | Manufacture of semiconductor element by close control of resist dimension | |
Hopla et al. | A Novel, High Contrast Positive Photoresist System | |
JPS60142518A (en) | Method of correcting pinhole of hardmask | |
JPH03116725A (en) | Resist peel-off method | |
JPS62135821A (en) | Formation of pattern |