CN208521130U - Combine mask plate - Google Patents
Combine mask plate Download PDFInfo
- Publication number
- CN208521130U CN208521130U CN201821269953.8U CN201821269953U CN208521130U CN 208521130 U CN208521130 U CN 208521130U CN 201821269953 U CN201821269953 U CN 201821269953U CN 208521130 U CN208521130 U CN 208521130U
- Authority
- CN
- China
- Prior art keywords
- pattern
- light
- microns
- mask plate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The utility model discloses a kind of combination mask plate, the combination mask plate includes the first sub- mask plate and the second sub- mask plate, the first light mask pattern is formed on first sub- mask plate, the second light mask pattern is formed on second sub- mask plate, the first light mask pattern and the second light mask pattern have the interaction insert row figure to overlap in same exposure area.Complicated mask pattern is decomposed into two simple sub- mask patterns by the utility model, is transferred in substrate in an etching processing procedure, is simplified etching technics and improve alignment precision.
Description
Technical field
The utility model relates to field of semiconductor manufacture, in particular to semiconductor integrated circuit field, more particularly to one kind
Combine mask plate.
Background technique
Currently, integrated circuit (IC) manufacture craft of semiconductors manufacture, mainly in the chip of silicon substrate (wafer) device
The thousands of chips (chip) with same semiconductor device structure are made on face simultaneously, it is well known that according to being made
The semiconductor device structure of work needs, and metallization medium layer is distinguished in wafer device side, makes half respectively in different medium layer
Each component part of conductor device structure largely will be by lithography and etching step with shape for every layer of dielectric layer
At specific semiconductor device structure, such as grid, through-hole etc..Particularly, first in the wafer device side with front layer
For one dielectric layer of upper deposition as current layer, so-called front layer is exactly the dielectric layer for having made semiconductor device structure, is then held
Row lithography step forms photoengraving pattern above current layer, finally passes through etch step on current layer by exposure mask of photoengraving pattern
Form specific semiconductor device structure.Lithography step is exactly the photoetching that mask pattern is transferred to current layer surface coating
Glue, and form the process of photoengraving pattern, alignment precision (overlay), which just refers to, to be made in the photoengraving pattern and front layer of current layer
Overlay precision between semiconductor devices.
Photoetching carries out in photoetching equipment, and alignment precision is one of important performance indexes of photoetching equipment and photoetching skill
An art pith in need of consideration.As photoetching technique is continuously improved, the characteristic size of semiconductor device structure is also continuous
Diminution, have higher requirement to alignment precision.Advanced scanning projecting photoetching machine is generallyd use now as photoetching equipment, institute
Advanced scanning projecting photoetching machine is called, is exactly to be exposed every time only for a chip in wafer device side, passes through mask plate
With the movement of chip relative position, successively all chips in stepper exposure wafer device side.If the alignment precision of photoetching is super
Cross the fault tolerance between current layer and front layer, then the circuit designed between the two layers may because of displacement generate open circuit or
Short circuit, to influence the product yield and performance of semiconductors manufacture.
Chinese patent (notification number: CN101661224A) discloses a kind of method for improving photoetching alignment precision, including such as
Lower step: step 1 forms current layer pattern on having the silicon wafer for being aligned layer pattern with photoetching process；Step 2, in silicon wafer
Upper spin coating refractive index is greater than 1 filled layer, and at least the figure for being aligned layer is completely covered for the filled layer；Step 3, measurement is simultaneously
The alignment precision for calculating current layer and being aligned between layer；Step 4, exposure and/or development, remove filled layer.The invention passes through
One filled layer of spin coating on silicon wafer increases the refractive index n of graphics environment, enhances strength of figure, to guarantee silicon wafer multilayer
Alignment precision when photoetching between layers, this method is related to complicated calculating and measurement process, complicated for operation.
It is stable that Chinese patent (notification number: CN103019042A) discloses a kind of improvement alignment precision of high-transparency mask plate
The method of property, this method invert high transparency positive photoresist mask plate transmission region, obtain transmission region with it is described
The opposite low-transmittance mask plate of positive photoresist mask plate transmission region, and the low-transmittance exposure mask to be obtained after the reversion
Plate is exposure mask plate, is exposed development to wafer using negative photoresist.To effectively reduce in exposure process
The heated energy of lens, reduces the degree in the rear lens expanded by heating of continuous exposure wafer, so that alignment precision
It keeps stablizing, improves the yields and production efficiency of wafer.Requirement of this method to exposure mask plate is too high, no
Conducive to popularization.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of combination mask plates, and complicated mask pattern is decomposed into
Two simple mask plates, are transferred in substrate by once etching processing procedure, are simplified etching technics and are improved alignment precision.For reality
Existing above-mentioned technical purpose, the specific technical solution that the utility model is taken are as follows:
A kind of combination mask plate, including the first sub- mask plate and the second sub- mask plate are formed on the first sub- mask plate
Have the first light mask pattern, be formed with the second light mask pattern on the second sub- mask plate, first light mask pattern and
Second light mask pattern has the interaction insert row figure to overlap in same exposure area.
As an improved technical scheme, first light mask pattern and second light mask pattern are not attached to and equidistantly
It is staggered.
As an improved technical scheme, the width of the described first sub- mask plate is between 35 microns~40 microns, described first
Light mask pattern has the zhou duicheng tuxing for being divided into two sides, is covered by symmetry axis to first light of first light mask pattern
The distance of the two sides width edge of film pattern is between 75 microns~85 microns.
As an improved technical scheme, the width of the described second sub- mask plate is between 35 microns~40 microns, described second
Light mask pattern has the zhou duicheng tuxing for being divided into two sides, is covered by symmetry axis to second light of second light mask pattern
The distance of the two sides width edge of film pattern is between 75 microns~85 microns.
As an improved technical scheme, first light mask pattern and second light mask pattern have equal length
The dimension of picture equal with width.
As an improved technical scheme, first light mask pattern includes according to intermediate symmetry axis two sides distribution and phase
The the first photomask alignment bar and the second photomask alignment bar to connect, to form twill pattern, the first photomask alignment
The pitch of pitch and the second photomask alignment bar between item is equal, the first photomask alignment bar and second light
Any one acute angle formed between symmetry axis of mask alignment item is between 40 degree~50 degree.
As an improved technical scheme, second light mask pattern includes according to intermediate symmetry axis two sides distribution and phase
The third photomask alignment bar and the 4th photomask alignment bar to connect, to form twill pattern, the third photomask alignment
The pitch of pitch and the 4th photomask alignment bar between article is equal, the third photomask alignment bar and the 4th light
Any one acute angle formed between symmetry axis of mask alignment item is between 40 degree~50 degree.
As an improved technical scheme, the pitch of adjacent the first photomask alignment bar is between 6 microns~7 microns,
The pitch of adjacent the second photomask alignment bar is between 6 microns~7 microns.
As an improved technical scheme, the pitch of the adjacent third photomask alignment bar is between 6 microns~7 microns,
The pitch of adjacent the 4th photomask alignment bar is between 6 microns~7 microns.
As an improved technical scheme, the first photomask alignment bar and the second photomask alignment bar are upward
The pattern item convexed to form.
As an improved technical scheme, the third photomask alignment bar and the 4th photomask alignment bar are upward
The pattern item convexed to form.
As an improved technical scheme, the first photomask alignment bar and the second photomask alignment bar are downward
Be recessed the pattern slot formed.
As an improved technical scheme, the third photomask alignment bar and the 4th photomask alignment bar are downward
Be recessed the pattern slot formed.
Beneficial effect
The utility model is decomposed into two relatively simple sons by providing a kind of combination mask plate, by complicated mask pattern
Mask pattern, respectively the first light mask pattern and the second light mask pattern, the first light mask pattern and the second light mask pattern
With the interaction insert row figure in same exposure area of overlapping, the first light mask pattern and the second light mask pattern be not attached to and
Equidistantly it is staggered.The utility model is in a photo-etching processes first by a light mask pattern exposure development to material layer
On, material layer needed for another redeposited light mask pattern exposure development and exposure development another light mask pattern, this reality
With novel method, by complicated mask pattern, exposure development and etching in a lithographic process are transferred in substrate, this is practical new
Type improves alignment precision while simplifying etching technics.
Detailed description of the invention
Fig. 1, which is painted in the utility model embodiment, combines mask plate patterns.
Fig. 2 is painted the first light mask pattern in the utility model embodiment.
Fig. 3 is painted the second light mask pattern in the utility model embodiment.
Fig. 4 is painted the cross-section diagram of the structure in the utility model embodiment after step S1.
Fig. 5 is painted the cross-section diagram of the structure in the utility model embodiment after step S2.
Fig. 6 is painted the cross-section diagram of the structure in the utility model embodiment after step S2.
Fig. 7 is painted the cross-section diagram of the structure in the utility model embodiment after step S3.
Fig. 8 is painted the cross-section diagram of the structure in the utility model embodiment after step S4.
Fig. 9 is painted the cross-section diagram of the structure in the utility model embodiment after step S5.
Figure 10 is painted the cross-section diagram of the structure in the utility model embodiment after step S6.
Figure 11 is painted the cross-section diagram of the structure in the utility model embodiment after step S7.
Figure 12 is painted the cross-section diagram of the structure after etching the first carbon-coating in the utility model embodiment.
Figure 13 is painted the cross-section diagram of the structure in the utility model embodiment after step S8.
In figure, 1, combination mask plate；2, the first light mask pattern；21, the first photomask alignment bar；22, the second photomask
Alignment bar；3, the second light mask pattern；31, third photomask alignment bar；32, the 4th photomask alignment bar；100, mask layer is pushed up；
101, substrate；102, bottom mask layer；103, the first carbon-coating；104, reticule layer；104A, the first reticule item；104B,
Two reticule items；105, intermediate cover layer；105A, intermediate cover strip；106, the first dielectric antireflective coatings；107, the second light
Photoresist layer 108, top carbon-coating；109, dielectric antireflective coatings are pushed up；110, the first photoresist layer.
Specific embodiment
To keep the purpose and technical solution of the utility model embodiment clearer, implement below in conjunction with the utility model
The technical solution of the utility model is clearly and completely described in example.Obviously, described embodiment is the utility model
A part of the embodiment, instead of all the embodiments.Based on described the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained under the premise of being not necessarily to creative work, belongs to the model of the utility model protection
It encloses.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific term) there is meaning identical with the general understanding of those of ordinary skill in the utility model fields.Also
It should be understood that those terms such as defined in the general dictionary should be understood that have in the context of the prior art
The consistent meaning of meaning will not be explained in an idealized or overly formal meaning and unless defined as here.
The method of photoengraving generally comprises the steps:
Firstly, coating photoresist (PR) in substrate 101, the method for coating can be spin coating.
Then, apply mask plate on the substrate 101 coated with PR.
Finally, being exposed, developing, to form photoengraving pattern in substrate 101.
As it can be seen that the precision of reticle pattern directly determines the precision of photoengraving pattern, if reticle pattern precision by
It influences, then directly affects the precision of photoengraving pattern.In order to improve the precision of photoengraving pattern, the utility model provides a kind of raising quarter
The lithographic method for losing precision, includes the following steps:
S1: as shown in Figure 1, providing a combination mask plate 1, which includes the first sub- mask plate and the second son
Mask plate, as shown in Fig. 2, the first light mask pattern 2 is formed on the first sub- mask plate, as shown in figure 3, in the second sub- exposure mask
The second light mask pattern 3 is formed in version；First light mask pattern 2 and the second light mask pattern 3, which have, to overlap in same exposure
Interaction insert row figure in region.One grapheme of the first light mask pattern 2 is located at two neighbor maps of the second light mask pattern 3
Between shape unit, also, a grapheme of the second light mask pattern 3 also is located at two adjacent patterns of the first light mask pattern 2
Between unit, the first light mask pattern 2 and the second light mask pattern 3 are not attached to and are equidistantly staggered.First sub- mask plate
Width is between 35 microns~40 microns, preferably 38 microns.First light mask pattern 2 has the zhou duicheng tuxing for being divided into two sides,
By the first light mask pattern 2 symmetry axis to the first light mask pattern 2 two sides width edge distance it is micro- between 75 microns~85
Rice.Preferably 80 microns.
The width of second sub- mask plate is between 35 microns~40 microns, preferably 38 microns.Second light mask pattern 3 has
Be divided into the zhou duicheng tuxing of two sides, by the second light mask pattern 3 symmetry axis to second light mask pattern 3 two sides width edge
Distance is between 75 microns~85 microns, preferably 80 microns.
First light mask pattern 2 and the second light mask pattern 3 have equal length and the equal dimension of picture of width.
First light mask pattern 2 includes according to intermediate symmetry axis two sides distribution and the first photomask interconnected is aligned
Item 21 and the second photomask alignment bar 22, pitch and the second light to form twill pattern, between the first photomask alignment bar 21
The pitch of mask alignment item 22 is equal, any one and symmetry axis of the first photomask alignment bar 21 and the second photomask alignment bar 22
Between the acute angle that is formed between 40 degree~50 degree, preferably 45 degree.
Second light mask pattern 3 includes according to intermediate symmetry axis two sides distribution and third photomask interconnected is aligned
Articles 31 and the 4th photomask alignment bar 32, pitch and the 4th light to form twill pattern, between third photomask alignment bar 31
The pitch of mask alignment item 32 is equal, any one and symmetry axis of third photomask alignment bar 31 and the 4th photomask alignment bar 32
Between the acute angle that is formed between 40 degree~50 degree, preferably 45 degree.
The production of mask plate may comprise steps of in the utility model: (1) figure that mask plate designs being passed through meter
Calculation machine aid in treatment is converted to the electronic data file of mask plate exposure sources identification；(2) it will be walked by mask plate exposure sources
Suddenly the electronic data file that (1) obtains carries out laser direct-write photoetching operation on exposure mask board raw material；(3) exposure mask board raw material is carried out
Development treatment；(4) exposure mask board raw material is etched；(5) mask plate is removed from exposure mask board raw material and it is cleaned；
(6) mask plate protective film is fitted on the surface of mask plate.
Photoresist coating equipment includes: plummer in the utility model, is suitable for placing substrate 101, and drive 101 turns of substrate
It is dynamic；Jet-coating photoresit system, including photoresist supply source；First feeding pipe, one end are connected with photoresist supply source；Photoetching
Glue nozzle is connected far from one end of photoresist supply source positioned at the top at plummer center, and with the first feeding pipe, is suitable for
Basad 101 centre of surface sprays photoresist；And barrier layer paint finishing, including blocking agent supply source；Second feeding pipe,
One end is connected with exposure blocking agent supply source；Blocking agent nozzle, positioned at the top of plummer, and it is separate with the second feeding pipe
One end of blocking agent supply source is connected, and the fringe region suitable for basad 101 sprays barrier layer.The photoresist coating equipment exists
The substrate 101 is placed in the lower section of combination mask plate 1, is formed in substrate 101 by even spread photoresist in substrate 101
Material layer to be patterned, material layer successively include bottom mask layer 102, reticule layer 104, top mask layer 100 from top to bottom
And first photoresist layer 110, bottom mask layer 102 may include oxide skin(coating), reticule layer 104 may include that interlevel dielectric is anti-
Reflectance coating, top mask layer 100 may include top carbon-coating 108 and top dielectric antireflective coatings 109.As shown in figure 4, S1 step packet
It includes: by 2 exposure development of the first light mask pattern to the first photoresist layer 110 formed on the first sub- mask plate, forming first
Photoetching agent pattern；The utility model by providing a kind of combination mask plate 1, by complicated mask pattern be decomposed into two it is relatively simple
Sub- mask pattern, respectively the first light mask pattern 2 and the second light mask pattern 3 make 2 He of the first light mask pattern respectively
Second light mask pattern 3 reduces alignment and occurs the probability of overlay error in the process.Mask plate may include in the utility model
Quartz base plate and its photomask material chromium metal layer covered above, chromium metal layer are formed with light mask pattern, the first photomask
Figure 2 and the second light mask pattern 3 can be raised upward by photomask material to be formed, and the first light mask pattern 2 and the second light are covered
Film pattern 3 can also be recessed downwards by photomask material and be formed.
As shown in Figure 5,6, S2 step includes: and forms top using the first photoetching agent pattern as mask etching top mask layer 100 and cover
Film pattern；
S3: as shown in fig. 7, to push up reticule layer 104 of the exposure mask layer pattern as mask etching, when intermediate mask layer 104
Etch thicknesses when reaching 60% or more of 104 overall thickness of reticule layer, stop etching, form multiple first reticule items
104A, the first reticule 104A close to form the first reticule layer pattern, between the first adjacent reticule 104A
Be equidistant and between 6 microns~7 microns；Preferably, when the etch thicknesses of intermediate mask layer 104 reach reticule layer
104 overall thickness 60%~70% when, stop etching, formed the first reticule layer pattern.First reticule layer pattern
Height can be the half of 105 thickness of intermediate cover layer.
S4: as shown in figure 8, be sequentially depositing from top to bottom on the first reticule layer pattern to be formed intermediate cover layer 105,
First dielectric antireflective coatings 106 and the second photoresist layer 107, the second light mask pattern 3 that will be formed on the second sub- mask plate
On exposure development to the second photoresist layer 107, the second photoetching agent pattern is formed；
S5: as shown in figure 9, using the second photoetching agent pattern as the first dielectric antireflective coatings of mask etching 106, first is formed
Dielectric antireflective coatings pattern；
S6: it as shown in Figure 10, using the first dielectric antireflective coatings pattern as mask etching intermediate cover layer 105, is formed more
A intermediate cover strip 105A, intermediate cover strip 105A combine to form intermediate cover layer pattern, and intermediate cover strip 105A is arranged in
Gap between one reticule 104A, the pitch between adjacent intermediate cover strip 105A is equal, the first reticule item
The pitch of 104A is between 6 microns~7 microns, and the pitch of adjacent intermediate cover strip 105A between 6 microns~7 microns, cover by centre
Pitch is between 3 microns~3.5 microns between cover fillet 105A and the first adjacent reticule 104A；
S7: as shown in figure 11, using the first reticule layer pattern and intermediate cover layer pattern as mask etching it is remaining in
Between mask layer 104 so that reticule layer 104 is formed as the total pattern of reticule layer, the total pattern of reticule layer is by first
Between mask strip 104A and multiple second reticule 104B composition, the second reticule 104B by intermediate cover layer pattern turn
It sets and is formed, the first reticule 104A is interspersed to be arranged in the second reticule 104B, and the first reticule item is made
104A and the second reticule 104B includes the parallel lines portion being not connected with；And state the first reticule 104A and second
Reticule 104B is formed in same structure layer, the first reticule 104A and adjacent the second reticule item
Pitch between 104B is between 3 microns~3.5 microns；First reticule 104A and the second reticule 104B can be
Raise upward the pattern item to be formed.First reticule 104A and the second reticule 104B can be recess downwards
The pattern slot of formation.
As shown in figure 13, S8: the total pattern of reticule layer is transferred on bottom mask layer 102, it is whole to form more alignment marks
Close pattern.
Also deposition forms the first carbon-coating 103 between bottom mask layer 102 and reticule layer 104.As shown in figure 12, in step
Before rapid S8 further include: using the total pattern of reticule layer as the first carbon-coating of mask etching 103, form the first carbon artwork.Such as Fig. 5
Shown, step S2 includes forming top dielectric reflection using the first photoetching agent pattern as mask etching top dielectric antireflective coatings 109
Coating patterns.As shown in fig. 6, step S2 further includes being formed using pushing up dielectric antireflective coatings pattern as mask etching top carbon-coating 108
Push up exposure mask layer pattern.
The utility model is first transferred a light mask pattern by exposure development and etching in an etching technics
To material layer, material layer needed for another redeposited light mask pattern exposure development simultaneously passes through exposure development and etching transmitting
Complicated mask pattern is transferred to substrate 101 in a lithographic process by another light mask pattern, the utility model method
On, simplify etching technics and improves alignment precision.In the present invention, the height for pushing up dielectric antireflective coatings 109 can be with
It is the half of 105 height of intermediate cover layer.It is high that the height of top dielectric antireflective coatings 109 can be reticule layer 104
The one third of degree.The height of top carbon-coating 108 can be 2/3rds of 103 height of the first carbon-coating.
The above is only the embodiments of the present invention, and the description thereof is more specific and detailed, but can not therefore understand
For a limitation on the scope of the patent of the present invention.It should be pointed out that for those of ordinary skill in the art, not taking off
Under the premise of from the utility model design, various modifications and improvements can be made, these belong to the protection of the utility model
Range.
Claims (13)
1. a kind of combination mask plate, which is characterized in that including the first sub- mask plate and the second sub- mask plate, the first sub- exposure mask
It is formed with the first light mask pattern in version, the second light mask pattern is formed on the second sub- mask plate, first light is covered
Film pattern and second light mask pattern have the interaction insert row figure to overlap in same exposure area.
2. combination mask plate according to claim 1, which is characterized in that first light mask pattern and second light
Mask pattern is not attached to and is equidistantly staggered.
3. combination mask plate according to claim 1, which is characterized in that the width of the first sub- mask plate is micro- between 35
Rice~40 microns, first light mask pattern has the zhou duicheng tuxing for being divided into two sides, by first light mask pattern
Symmetry axis to first light mask pattern two sides width edge distance between 75 microns~85 microns.
4. combination mask plate according to claim 1, which is characterized in that the width of the second sub- mask plate is micro- between 35
Rice~40 microns, second light mask pattern has the zhou duicheng tuxing for being divided into two sides, by second light mask pattern
Symmetry axis to second light mask pattern two sides width edge distance between 75 microns~85 microns.
5. combination mask plate according to claim 1, which is characterized in that first light mask pattern and second light
The mask pattern dimension of picture equal with equal length and width.
6. combination mask plate according to claim 3, which is characterized in that first light mask pattern includes according in one
Between the distribution of symmetry axis two sides and the first photomask alignment bar interconnected and the second photomask alignment bar, to form twill figure
The pitch of case, pitch and the second photomask alignment bar between the first photomask alignment bar is equal, first light
Mask alignment item and any one acute angle formed between symmetry axis of the second photomask alignment bar are between 40 degree~50 degree.
7. combination mask plate according to claim 4, which is characterized in that second light mask pattern includes according in one
Between the distribution of symmetry axis two sides and third photomask alignment bar interconnected and the 4th photomask alignment bar, to form twill figure
The pitch of case, pitch and the 4th photomask alignment bar between the third photomask alignment bar is equal, the third light
Any one acute angle formed between symmetry axis of mask alignment article and the 4th photomask alignment bar is between 40 degree~50 degree.
8. combination mask plate according to claim 6, which is characterized in that the section of adjacent the first photomask alignment bar
Away between 6 microns~7 microns, the pitch of adjacent the second photomask alignment bar is between 6 microns~7 microns.
9. combination mask plate according to claim 7, which is characterized in that the section of the adjacent third photomask alignment bar
Away between 6 microns~7 microns, the pitch of adjacent the 4th photomask alignment bar is between 6 microns~7 microns.
10. combination mask plate according to claim 6, which is characterized in that the first photomask alignment bar and described
Two photomask alignment bars are the pattern item to be formed that raises upward.
11. combination mask plate according to claim 7, which is characterized in that the third photomask alignment bar and described
Four photomask alignment bars are the pattern item to be formed that raises upward.
12. combination mask plate according to claim 6, which is characterized in that the first photomask alignment bar and described
Two photomask alignment bars are the pattern slot that downward recess is formed.
13. combination mask plate according to claim 7, which is characterized in that the third photomask alignment bar and described
Four photomask alignment bars are the pattern slot that downward recess is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821269953.8U CN208521130U (en) | 2018-08-08 | 2018-08-08 | Combine mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821269953.8U CN208521130U (en) | 2018-08-08 | 2018-08-08 | Combine mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208521130U true CN208521130U (en) | 2019-02-19 |
Family
ID=65332914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821269953.8U Active CN208521130U (en) | 2018-08-08 | 2018-08-08 | Combine mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208521130U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223917A (en) * | 2019-05-09 | 2019-09-10 | 上海华力集成电路制造有限公司 | The method for reducing influence of the chemomechanical copper grinding to rear end alignment precision |
| CN116224709A (en) * | 2023-05-08 | 2023-06-06 | 长鑫存储技术有限公司 | Photomask assembly and method for manufacturing semiconductor structure |
-
2018
- 2018-08-08 CN CN201821269953.8U patent/CN208521130U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223917A (en) * | 2019-05-09 | 2019-09-10 | 上海华力集成电路制造有限公司 | The method for reducing influence of the chemomechanical copper grinding to rear end alignment precision |
| CN116224709A (en) * | 2023-05-08 | 2023-06-06 | 长鑫存储技术有限公司 | Photomask assembly and method for manufacturing semiconductor structure |
| CN116224709B (en) * | 2023-05-08 | 2023-09-26 | 长鑫存储技术有限公司 | Photomask assembly and method for manufacturing semiconductor structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110824847B (en) | Etching method for improving overlay accuracy | |
| CN103777462B (en) | Display device manufacture photomask and pattern transfer-printing method | |
| CN208521130U (en) | Combine mask plate | |
| CN103995438B (en) | The optimization method of exposing wafer layout | |
| CN101382728B (en) | Gray level mask plate structure | |
| CN107193184A (en) | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern | |
| CN104765088B (en) | Linear variable-area wave zone plate with feature of long focal length | |
| CN107490932A (en) | The modification method of mask plate patterns | |
| CN101957555B (en) | Mask picture modification method, mask manufacturing method and optical proximity correction method | |
| CN110764364B (en) | Manufacturing method of nano pattern, nano imprinting substrate and display substrate | |
| CN100437361C (en) | Method for making ultraviolet solidified nano impression formboard | |
| KR101271371B1 (en) | Gray tone mask for fabricating flat panel display and method for fabricating the same | |
| CN110865514B (en) | Mask plate thermal effect compensation method | |
| CN104157556B (en) | Metal hard mask opening lithographic method | |
| CN108107497A (en) | Preparing grating method | |
| JPS63216052A (en) | Exposing method | |
| CN210776174U (en) | Combined light shield | |
| CN104252098A (en) | Phase shifting mask and manufacture method thereof, and array substrate and manufacture method thereof | |
| CN105607308A (en) | Measurement scale, manufacturing method and using method | |
| JP3959212B2 (en) | Mask pattern correction method and exposure mask using the same | |
| KR20080070350A (en) | Semiconductor device and method for fabricating the same | |
| CN103698973A (en) | Preparation method of flexible photoetching mask plate | |
| CN109164674A (en) | A kind of integrated circuit phase shifting mask manufacturing method | |
| JPS57138638A (en) | Photoetching mask | |
| CN114355736B (en) | Method for preparing micron-sized double-layer structure in one step by using mask lithography technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |