JPS60262972A - プラズマcvd装置 - Google Patents
プラズマcvd装置Info
- Publication number
- JPS60262972A JPS60262972A JP11794084A JP11794084A JPS60262972A JP S60262972 A JPS60262972 A JP S60262972A JP 11794084 A JP11794084 A JP 11794084A JP 11794084 A JP11794084 A JP 11794084A JP S60262972 A JPS60262972 A JP S60262972A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrodes
- electrode
- metal electrode
- needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11794084A JPS60262972A (ja) | 1984-06-08 | 1984-06-08 | プラズマcvd装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11794084A JPS60262972A (ja) | 1984-06-08 | 1984-06-08 | プラズマcvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60262972A true JPS60262972A (ja) | 1985-12-26 |
JPH0561350B2 JPH0561350B2 (enrdf_load_stackoverflow) | 1993-09-06 |
Family
ID=14723984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11794084A Granted JPS60262972A (ja) | 1984-06-08 | 1984-06-08 | プラズマcvd装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60262972A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4915807A (en) * | 1988-09-29 | 1990-04-10 | Texas Instruments Incorporated | Method and apparatus for processing a semiconductor wafer |
JP2001098358A (ja) * | 1999-09-28 | 2001-04-10 | Ulvac Japan Ltd | カーボン薄膜の成膜装置、及びカーボン薄膜製造方法 |
JP2005293854A (ja) * | 2004-03-31 | 2005-10-20 | Hiroshi Takigawa | プラズマ生成用電源回路、プラズマ生成装置、プラズマ処理装置及び目的物 |
US20110000432A1 (en) * | 2008-06-12 | 2011-01-06 | Atomic Energy Council - Institute Of Nuclear Energy Research | One atmospheric pressure non-thermal plasma reactor with dual discharging-electrode structure |
-
1984
- 1984-06-08 JP JP11794084A patent/JPS60262972A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4915807A (en) * | 1988-09-29 | 1990-04-10 | Texas Instruments Incorporated | Method and apparatus for processing a semiconductor wafer |
JP2001098358A (ja) * | 1999-09-28 | 2001-04-10 | Ulvac Japan Ltd | カーボン薄膜の成膜装置、及びカーボン薄膜製造方法 |
JP2005293854A (ja) * | 2004-03-31 | 2005-10-20 | Hiroshi Takigawa | プラズマ生成用電源回路、プラズマ生成装置、プラズマ処理装置及び目的物 |
WO2005101927A1 (ja) * | 2004-03-31 | 2005-10-27 | Kurita Seisakusho Co., Ltd. | プラズマ生成用電源回路、プラズマ生成装置、プラズマ処理装置及び目的物 |
US7719198B2 (en) | 2004-03-31 | 2010-05-18 | Hirofumi Takikawa | Power supply circuit for plasma generation, plasma generating apparatus, plasma processing apparatus and plasma processed object |
US20110000432A1 (en) * | 2008-06-12 | 2011-01-06 | Atomic Energy Council - Institute Of Nuclear Energy Research | One atmospheric pressure non-thermal plasma reactor with dual discharging-electrode structure |
Also Published As
Publication number | Publication date |
---|---|
JPH0561350B2 (enrdf_load_stackoverflow) | 1993-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |