JPS60262427A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60262427A
JPS60262427A JP59117768A JP11776884A JPS60262427A JP S60262427 A JPS60262427 A JP S60262427A JP 59117768 A JP59117768 A JP 59117768A JP 11776884 A JP11776884 A JP 11776884A JP S60262427 A JPS60262427 A JP S60262427A
Authority
JP
Japan
Prior art keywords
resist
resist film
film
fine
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59117768A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518253B2 (cg-RX-API-DMAC10.html
Inventor
Hitoshi Tsuji
均 辻
Chiharu Kato
千晴 加藤
Kazuyuki Saito
斉藤　和行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59117768A priority Critical patent/JPS60262427A/ja
Publication of JPS60262427A publication Critical patent/JPS60262427A/ja
Publication of JPH0518253B2 publication Critical patent/JPH0518253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/202—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP59117768A 1984-06-08 1984-06-08 半導体装置の製造方法 Granted JPS60262427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59117768A JPS60262427A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59117768A JPS60262427A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60262427A true JPS60262427A (ja) 1985-12-25
JPH0518253B2 JPH0518253B2 (cg-RX-API-DMAC10.html) 1993-03-11

Family

ID=14719839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59117768A Granted JPS60262427A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60262427A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2105950A1 (en) * 2008-03-27 2009-09-30 United Radiant Technology Corp. Thin film etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2105950A1 (en) * 2008-03-27 2009-09-30 United Radiant Technology Corp. Thin film etching method

Also Published As

Publication number Publication date
JPH0518253B2 (cg-RX-API-DMAC10.html) 1993-03-11

Similar Documents

Publication Publication Date Title
JPH04115515A (ja) パターン形成方法
JPS60262427A (ja) 半導体装置の製造方法
US4612274A (en) Electron beam/optical hybrid lithographic resist process in acoustic wave devices
JPS63246821A (ja) パタ−ン形成方法
JPS5914888B2 (ja) パタ−ン形成方法
JPS63246822A (ja) パタ−ン形成方法
JPH02140914A (ja) 半導体装置の製造方法
JPH06186728A (ja) ホトマスクの製造方法
JPH0544169B2 (cg-RX-API-DMAC10.html)
JPH02238457A (ja) 厚膜フォトレジストパターンの形成方法
JPS62245251A (ja) レジストパタ−ン形成方法
JP2712407B2 (ja) ２層フォトレジストを用いた微細パターンの形成方法
JPH0451151A (ja) 位相シフトレチクルの製作方法
JPS6321831A (ja) パタ−ン形成方法
JPS6148704B2 (cg-RX-API-DMAC10.html)
JPH01239928A (ja) パターン形成方法
JPS58101427A (ja) 半導体装置の製造方法
JPS58219738A (ja) 半導体装置の製造方法
JPH09213609A (ja) 半導体装置の製造方法
JPH0253060A (ja) 半導体装置の製造方法
JP2666420B2 (ja) 半導体装置の製造方法
JPH0471331B2 (cg-RX-API-DMAC10.html)
JPS6335010B2 (cg-RX-API-DMAC10.html)
JPS62183449A (ja) パタ−ン形成方法
JPS6154629A (ja) フオト・レジストパタ−ンの形成方法