JPS60257532A - Heater-block for semiconductor die-bonder - Google Patents

Heater-block for semiconductor die-bonder

Info

Publication number
JPS60257532A
JPS60257532A JP11412584A JP11412584A JPS60257532A JP S60257532 A JPS60257532 A JP S60257532A JP 11412584 A JP11412584 A JP 11412584A JP 11412584 A JP11412584 A JP 11412584A JP S60257532 A JPS60257532 A JP S60257532A
Authority
JP
Japan
Prior art keywords
island
lead frame
block
heater
heater block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11412584A
Other languages
Japanese (ja)
Inventor
Katsuhiro Nishimura
勝博 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP11412584A priority Critical patent/JPS60257532A/en
Publication of JPS60257532A publication Critical patent/JPS60257532A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface

Abstract

PURPOSE:To improve adhesion between a heater-block and an island of a lead frame by installing a vacuum attracting aperture on the surface of the heat- block which makes a lead frame and island to adhere with each other. CONSTITUTION:In order to make an island 4a of a lead frame 4 to adhere with a heater-block 5, the island 4a of the lead frame 4 is placed on an adhered surface 5a of the heater-block 5, and a vacuum attracting aperture 6 is evacuated by vacuum source, then the vacuum pressure thereof is acted to the island 4a and is adhered to the adhered surface 5a. Thereafter, a semiconductor element 3 is die-bonded on the island 4a of the lead frame 4. Accordingly, it is possible that the island 4a is adhered surely to the heater-block 5, even through the lead frame 4 is a packaged small item.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体用ダイボンダーに使用するヒーターブロ
ックに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heater block used in a semiconductor die bonder.

〔従来技術とその問題点〕[Prior art and its problems]

半導体素子3をり・−ドフレーム4のアイランド(素子
固着部) 4aにグイボウント(以下、マウントという
)する際には、リードフレームのアイランドをヒーター
ブロックに密着させる必要がある。
When the semiconductor element 3 is mounted on the island (element fixing part) 4a of the lead frame 4, it is necessary to bring the island of the lead frame into close contact with the heater block.

従来の密着方法の一例を第2図(a) 、 (b)に示
す。
An example of the conventional adhesion method is shown in FIGS. 2(a) and 2(b).

第2図(a) 、 (b)に示すように従来は、リード
フレーム4のアイランド4aの両端2箇所を押え1,1
を使用して該アイランド4aをヒーターブロック5の上
面に密着させるのが一般的であった。この際、押え1.
1間の間隔りは半導体吸着コレット2の巾寸法Aとコレ
ット2によるスクラブ寸法(素子3をアイランド4aに
こすり付ける時の振幅寸法)との和よシ広く、しかもリ
ードフレーム4のアイランド段差部4b 、 4b間の
長さCより狭くする必要がある。
As shown in FIGS. 2(a) and 2(b), conventionally, two ends of the island 4a of the lead frame 4 are held down by pressers 1 and 1.
Generally, the island 4a was brought into close contact with the upper surface of the heater block 5 using a heater block. At this time, presser foot 1.
1 is wider than the sum of the width dimension A of the semiconductor adsorption collet 2 and the scrub dimension by the collet 2 (amplitude dimension when rubbing the element 3 against the island 4a), and is wider than the island stepped portion 4b of the lead frame 4. , 4b must be narrower than the length C between them.

ところが、最近パッケージの小型化に伴ない、リードフ
レーム4のDP寸寸法上アイランド4aの位置に近接し
、上記条件で押えることができなくなっている。Bは半
導体素子3の巾寸法である。
However, as packages have recently become smaller, the DP of the lead frame 4 has come closer to the position of the island 4a, making it impossible to hold it under the above conditions. B is the width dimension of the semiconductor element 3.

仮シに、リードフレーム4のDP寸寸法上シ広い外側の
位置を押え1,1を使用して押圧した場合には、第3図
に示すようにアイランド4aの段差部分4b 、 4b
を支点としてアイランド4aが上方に反り返ってリード
フレーム4のアイランド4aがヒーターブロック5の密
着面5aから離れてしまい、マラント性が極度に低下す
る結果になる。
When the lead frame 4 is pressed at a wider outer position in terms of DP dimension using the pressers 1, 1, the step portions 4b, 4b of the island 4a are pressed as shown in FIG.
The island 4a bends upward using the lead frame 4 as a fulcrum, and the island 4a of the lead frame 4 separates from the contact surface 5a of the heater block 5, resulting in extremely poor marant properties.

〔発明の目的〕[Purpose of the invention]

本発明は前記問題点を解消するもので、ヒーターブロッ
クとリードフレームのアイランドとを密着性を高めるこ
とにより、パッケージの小型化に伴なうダイボンドに対
処できる装置を提供するものである。
The present invention solves the above-mentioned problems, and provides an apparatus that can cope with die bonding that accompanies miniaturization of packages by increasing the adhesion between the heater block and the island of the lead frame.

〔発明の構成〕[Structure of the invention]

すなわち、本発明はヒーターブロックに密着させたリー
ドフレームのアイランドに半導体素子を該アイランドに
ダイボンドする半導体用グイボンダーにおいて、リード
フレームアイランドを密着させる前記ヒーターブロック
の面上に真空吸着用開口を設けたことを特徴とする半導
体ダイボンダー用ヒーターブロックである。
That is, the present invention provides a semiconductor bonder for die-bonding a semiconductor element to an island of a lead frame that is brought into close contact with a heater block, in which a vacuum suction opening is provided on the surface of the heater block that brings the lead frame island into close contact with the island. This is a heater block for semiconductor die bonders featuring the following.

〔実施例〕〔Example〕

以下に、本発明の一実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図(a)において、本発明はリードフレーム4のア
イランド4aを密着させるヒーターブロック5の密着面
5aに、リードフレーム4のアイランド4aを真空吸着
させる開口6を穿設したものである。
In FIG. 1(a), in the present invention, an opening 6 is formed in the adhesion surface 5a of a heater block 5 to which the island 4a of the lead frame 4 is brought into close contact with the island 4a of the lead frame 4 by vacuum suction.

本発明において、リードフレーム4のアイランド4aを
ヒーターブロック5に密着させるには、リードフレーム
4のアイランド4aをヒーターブロック5の密着面5a
に載置し、次に図示しない真空源により真空吸着用開口
6を真空引きしてその真空圧をアイランド4aに作用さ
せてこれを密着面5aに密着させる。その後、従来と同
様の方法により半導体素子3をリードフレーム4のアイ
ランド4a上にダイボンドする・したがって、第1図(
b)に示すパッケージ小型品のリードフレーム4であっ
ても、そのアイランド4aをヒーターブロック5に確実
に密着させることが可能になる・ 〔発明の効果〕 本発明は以上説明したように、リードフレームのアイラ
ンドを真空吸着を利用してこれをヒーターブロックに定
着させるようにしたので、従来のように押え機構でリー
ドフレームを押圧する必要がなく、パッケージの小型品
の場合にもリードフレームを変形させずにそのアイラン
ドをヒーターブロックに密着させることができ、ノくツ
ケージ小型品をリードフレームのアイランドに品質を低
下させることなくダイボンドすることができる効果を有
するものである。
In the present invention, in order to bring the island 4a of the lead frame 4 into close contact with the heater block 5, the island 4a of the lead frame 4 must be brought into close contact with the contact surface 5a of the heater block 5.
Next, the vacuum suction opening 6 is evacuated by a vacuum source (not shown), and the vacuum pressure is applied to the island 4a to bring it into close contact with the contact surface 5a. Thereafter, the semiconductor element 3 is die-bonded onto the island 4a of the lead frame 4 by a method similar to the conventional method.
Even with the lead frame 4 of the small package shown in b), it is possible to reliably bring the island 4a into close contact with the heater block 5. Since the island is fixed to the heater block using vacuum suction, there is no need to press the lead frame with a presser mechanism like in the past, and the lead frame can be deformed even in the case of small packages. This has the effect that the island can be brought into close contact with the heater block without any damage, and that a small piece of the socket cage can be die-bonded to the island of the lead frame without degrading quality.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の一実施例を示す断面図、第1図
(b)はパッケージ小型品のリードフレームの平面図、
第2図(a)は従来装置の一例を示す断面図、第2図(
b)はリードフレームの平面図、第3図は従来装置によ
りパッケージ小型品のダイボンドを示す断面図である。 5・・・ヒーターブロック、5a・・・密着面、6・・
・真空吸着用開口 特許出願人 九州日本電気株式会社 第1図 (Q) (b) 第2図 (Q)
FIG. 1(a) is a sectional view showing an embodiment of the present invention, FIG. 1(b) is a plan view of a lead frame of a small package product,
Figure 2(a) is a sectional view showing an example of a conventional device;
b) is a plan view of the lead frame, and FIG. 3 is a sectional view showing die bonding of a small package product using a conventional device. 5... Heater block, 5a... Close contact surface, 6...
・Vacuum suction opening patent applicant Kyushu NEC Co., Ltd. Figure 1 (Q) (b) Figure 2 (Q)

Claims (1)

【特許請求の範囲】[Claims] (1)ヒーターブロックに密着させたリードフレームの
アイランドに、半導体素子をダイボンドする半導体用ダ
イボンダーにおいて、リードフレームアイランドを密着
させる前記ヒーターブロックの面上に真空吸着用開口を
設けたことを特徴とする半導体ダイボンダー用ヒーター
ブロック。
(1) A semiconductor die bonder for die-bonding a semiconductor element to an island of a lead frame brought into close contact with a heater block, characterized in that a vacuum suction opening is provided on the surface of the heater block to which the lead frame island is brought into close contact. Heater block for semiconductor die bonder.
JP11412584A 1984-06-04 1984-06-04 Heater-block for semiconductor die-bonder Pending JPS60257532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11412584A JPS60257532A (en) 1984-06-04 1984-06-04 Heater-block for semiconductor die-bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11412584A JPS60257532A (en) 1984-06-04 1984-06-04 Heater-block for semiconductor die-bonder

Publications (1)

Publication Number Publication Date
JPS60257532A true JPS60257532A (en) 1985-12-19

Family

ID=14629757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11412584A Pending JPS60257532A (en) 1984-06-04 1984-06-04 Heater-block for semiconductor die-bonder

Country Status (1)

Country Link
JP (1) JPS60257532A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252183A (en) * 1993-03-01 1994-09-09 Nec Corp Semiconductor chip mounting stage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252183A (en) * 1993-03-01 1994-09-09 Nec Corp Semiconductor chip mounting stage

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