JPS60255697A - 炭化珪素単結晶の不純物濃度制御方法 - Google Patents
炭化珪素単結晶の不純物濃度制御方法Info
- Publication number
- JPS60255697A JPS60255697A JP59112569A JP11256984A JPS60255697A JP S60255697 A JPS60255697 A JP S60255697A JP 59112569 A JP59112569 A JP 59112569A JP 11256984 A JP11256984 A JP 11256984A JP S60255697 A JPS60255697 A JP S60255697A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- silicon carbide
- type
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 32
- 239000012535 impurity Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 7
- 239000002019 doping agent Substances 0.000 claims abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000001294 propane Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000004804 winding Methods 0.000 abstract description 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59112569A JPS60255697A (ja) | 1984-05-31 | 1984-05-31 | 炭化珪素単結晶の不純物濃度制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59112569A JPS60255697A (ja) | 1984-05-31 | 1984-05-31 | 炭化珪素単結晶の不純物濃度制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60255697A true JPS60255697A (ja) | 1985-12-17 |
| JPH0343240B2 JPH0343240B2 (enrdf_load_stackoverflow) | 1991-07-01 |
Family
ID=14589984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59112569A Granted JPS60255697A (ja) | 1984-05-31 | 1984-05-31 | 炭化珪素単結晶の不純物濃度制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60255697A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1178132A3 (en) * | 2000-08-02 | 2003-06-25 | Tokai Carbon Company, Ltd. | SiC material and method for manufacturing same |
| KR100450316B1 (ko) * | 2000-08-10 | 2004-09-30 | 호야 가부시키가이샤 | 탄화 규소 및 이의 제조 방법 |
| CN109576784A (zh) * | 2017-09-29 | 2019-04-05 | 上海新昇半导体科技有限公司 | 一种SiC外延层的制备方法及装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54104488A (en) * | 1978-02-03 | 1979-08-16 | Sharp Corp | Production of silicon carbide crystal layer |
-
1984
- 1984-05-31 JP JP59112569A patent/JPS60255697A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54104488A (en) * | 1978-02-03 | 1979-08-16 | Sharp Corp | Production of silicon carbide crystal layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1178132A3 (en) * | 2000-08-02 | 2003-06-25 | Tokai Carbon Company, Ltd. | SiC material and method for manufacturing same |
| KR100450316B1 (ko) * | 2000-08-10 | 2004-09-30 | 호야 가부시키가이샤 | 탄화 규소 및 이의 제조 방법 |
| CN109576784A (zh) * | 2017-09-29 | 2019-04-05 | 上海新昇半导体科技有限公司 | 一种SiC外延层的制备方法及装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0343240B2 (enrdf_load_stackoverflow) | 1991-07-01 |
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