JPS60255697A - 炭化珪素単結晶の不純物濃度制御方法 - Google Patents

炭化珪素単結晶の不純物濃度制御方法

Info

Publication number
JPS60255697A
JPS60255697A JP59112569A JP11256984A JPS60255697A JP S60255697 A JPS60255697 A JP S60255697A JP 59112569 A JP59112569 A JP 59112569A JP 11256984 A JP11256984 A JP 11256984A JP S60255697 A JPS60255697 A JP S60255697A
Authority
JP
Japan
Prior art keywords
silicon carbide
single crystal
impurity concentration
carbide single
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59112569A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0343240B2 (enrdf_load_html_response
Inventor
Masaki Furukawa
勝紀 古川
Akira Suzuki
彰 鈴木
Mitsuhiro Shigeta
光浩 繁田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59112569A priority Critical patent/JPS60255697A/ja
Publication of JPS60255697A publication Critical patent/JPS60255697A/ja
Publication of JPH0343240B2 publication Critical patent/JPH0343240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP59112569A 1984-05-31 1984-05-31 炭化珪素単結晶の不純物濃度制御方法 Granted JPS60255697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59112569A JPS60255697A (ja) 1984-05-31 1984-05-31 炭化珪素単結晶の不純物濃度制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59112569A JPS60255697A (ja) 1984-05-31 1984-05-31 炭化珪素単結晶の不純物濃度制御方法

Publications (2)

Publication Number Publication Date
JPS60255697A true JPS60255697A (ja) 1985-12-17
JPH0343240B2 JPH0343240B2 (enrdf_load_html_response) 1991-07-01

Family

ID=14589984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59112569A Granted JPS60255697A (ja) 1984-05-31 1984-05-31 炭化珪素単結晶の不純物濃度制御方法

Country Status (1)

Country Link
JP (1) JPS60255697A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1178132A3 (en) * 2000-08-02 2003-06-25 Tokai Carbon Company, Ltd. SiC material and method for manufacturing same
KR100450316B1 (ko) * 2000-08-10 2004-09-30 호야 가부시키가이샤 탄화 규소 및 이의 제조 방법
CN109576784A (zh) * 2017-09-29 2019-04-05 上海新昇半导体科技有限公司 一种SiC外延层的制备方法及装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104488A (en) * 1978-02-03 1979-08-16 Sharp Corp Production of silicon carbide crystal layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104488A (en) * 1978-02-03 1979-08-16 Sharp Corp Production of silicon carbide crystal layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1178132A3 (en) * 2000-08-02 2003-06-25 Tokai Carbon Company, Ltd. SiC material and method for manufacturing same
KR100450316B1 (ko) * 2000-08-10 2004-09-30 호야 가부시키가이샤 탄화 규소 및 이의 제조 방법
CN109576784A (zh) * 2017-09-29 2019-04-05 上海新昇半导体科技有限公司 一种SiC外延层的制备方法及装置

Also Published As

Publication number Publication date
JPH0343240B2 (enrdf_load_html_response) 1991-07-01

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