JPS60247969A - 自己消弧形半導体素子 - Google Patents

自己消弧形半導体素子

Info

Publication number
JPS60247969A
JPS60247969A JP59104132A JP10413284A JPS60247969A JP S60247969 A JPS60247969 A JP S60247969A JP 59104132 A JP59104132 A JP 59104132A JP 10413284 A JP10413284 A JP 10413284A JP S60247969 A JPS60247969 A JP S60247969A
Authority
JP
Japan
Prior art keywords
layer
anode
gate
base region
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59104132A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025016B2 (enExample
Inventor
Yutaka Kawamura
豊 川村
Kimihiro Muraoka
公裕 村岡
Yoshinobu Otsubo
大坪　義信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Denki Seizo KK, Toyo Electric Manufacturing Ltd filed Critical Toyo Denki Seizo KK
Priority to JP59104132A priority Critical patent/JPS60247969A/ja
Publication of JPS60247969A publication Critical patent/JPS60247969A/ja
Publication of JPH025016B2 publication Critical patent/JPH025016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP59104132A 1984-05-23 1984-05-23 自己消弧形半導体素子 Granted JPS60247969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59104132A JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59104132A JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Publications (2)

Publication Number Publication Date
JPS60247969A true JPS60247969A (ja) 1985-12-07
JPH025016B2 JPH025016B2 (enExample) 1990-01-31

Family

ID=14372580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59104132A Granted JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Country Status (1)

Country Link
JP (1) JPS60247969A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
US4821083A (en) * 1986-09-30 1989-04-11 Kabushiki Kaisha Toshiba Thyristor drive system
US4977438A (en) * 1986-03-20 1990-12-11 Bbc Brown, Boveri Ltd. Turn-off semiconductor component and use thereof
US5132767A (en) * 1986-09-30 1992-07-21 Kabushiki Kaisha Toshiba Double gate GTO thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
US4977438A (en) * 1986-03-20 1990-12-11 Bbc Brown, Boveri Ltd. Turn-off semiconductor component and use thereof
US4821083A (en) * 1986-09-30 1989-04-11 Kabushiki Kaisha Toshiba Thyristor drive system
US5132767A (en) * 1986-09-30 1992-07-21 Kabushiki Kaisha Toshiba Double gate GTO thyristor

Also Published As

Publication number Publication date
JPH025016B2 (enExample) 1990-01-31

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term