JPS60243272A - 化学的蒸着ウエーフアーボート - Google Patents
化学的蒸着ウエーフアーボートInfo
- Publication number
- JPS60243272A JPS60243272A JP60093957A JP9395785A JPS60243272A JP S60243272 A JPS60243272 A JP S60243272A JP 60093957 A JP60093957 A JP 60093957A JP 9395785 A JP9395785 A JP 9395785A JP S60243272 A JPS60243272 A JP S60243272A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- wafer
- range
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 claims description 103
- 238000005229 chemical vapour deposition Methods 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000011068 loading method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000015429 Mirabilis expansa Nutrition 0.000 description 3
- 244000294411 Mirabilis expansa Species 0.000 description 3
- 235000013536 miso Nutrition 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/607,065 US4582020A (en) | 1984-05-04 | 1984-05-04 | Chemical vapor deposition wafer boat |
| US607065 | 1984-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60243272A true JPS60243272A (ja) | 1985-12-03 |
| JPS6257709B2 JPS6257709B2 (https=) | 1987-12-02 |
Family
ID=24430661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60093957A Granted JPS60243272A (ja) | 1984-05-04 | 1985-05-02 | 化学的蒸着ウエーフアーボート |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4582020A (https=) |
| EP (1) | EP0161101B1 (https=) |
| JP (1) | JPS60243272A (https=) |
| AT (1) | ATE45393T1 (https=) |
| AU (1) | AU4195985A (https=) |
| CA (1) | CA1234972A (https=) |
| DE (1) | DE3572199D1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555545U (ja) * | 1991-12-25 | 1993-07-23 | 国際電気株式会社 | 縦型減圧ｃｖｄ装置用ボート |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4641604A (en) * | 1984-05-04 | 1987-02-10 | Anicon, Inc. | Chemical vapor deposition wafer boat |
| AU6519986A (en) * | 1985-11-18 | 1987-05-21 | Anicon Inc. | Quartz 'boat' for chemical vapor deposition of semiconductor wafers |
| JPS62134936A (ja) * | 1985-12-05 | 1987-06-18 | アニコン・インコ−ポレ−テツド | 腐食耐性をもつたウエ−フア−・ボ−ト及びその製造法 |
| JPH0736418B2 (ja) * | 1986-05-19 | 1995-04-19 | 富士通株式会社 | ウエーハキャリア |
| US4720395A (en) * | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
| JP3473715B2 (ja) * | 1994-09-30 | 2003-12-08 | 信越半導体株式会社 | 石英ガラス製ウェーハボート |
| US5618351A (en) * | 1995-03-03 | 1997-04-08 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
| US20070243317A1 (en) * | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
| JP5457043B2 (ja) * | 2009-01-30 | 2014-04-02 | 東洋炭素株式会社 | Ｃｖｄ方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5364676A (en) * | 1976-11-22 | 1978-06-09 | Hitachi Ltd | Treating apparatus in gas phase |
| US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4179326A (en) * | 1976-04-22 | 1979-12-18 | Fujitsu Limited | Process for the vapor growth of a thin film |
| DE2746427A1 (de) * | 1977-10-15 | 1979-04-19 | Itt Ind Gmbh Deutsche | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben |
| CA1158109A (en) * | 1981-01-14 | 1983-12-06 | George M. Jenkins | Coating of semiconductor wafers and apparatus therefor |
-
1984
- 1984-05-04 US US06/607,065 patent/US4582020A/en not_active Expired - Lifetime
-
1985
- 1985-04-25 CA CA000480118A patent/CA1234972A/en not_active Expired
- 1985-05-01 AT AT85303099T patent/ATE45393T1/de not_active IP Right Cessation
- 1985-05-01 EP EP85303099A patent/EP0161101B1/en not_active Expired
- 1985-05-01 DE DE8585303099T patent/DE3572199D1/de not_active Expired
- 1985-05-02 JP JP60093957A patent/JPS60243272A/ja active Granted
- 1985-05-03 AU AU41959/85A patent/AU4195985A/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
| JPS5364676A (en) * | 1976-11-22 | 1978-06-09 | Hitachi Ltd | Treating apparatus in gas phase |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555545U (ja) * | 1991-12-25 | 1993-07-23 | 国際電気株式会社 | 縦型減圧ｃｖｄ装置用ボート |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0161101B1 (en) | 1989-08-09 |
| US4582020A (en) | 1986-04-15 |
| AU4195985A (en) | 1985-11-07 |
| ATE45393T1 (de) | 1989-08-15 |
| JPS6257709B2 (https=) | 1987-12-02 |
| CA1234972A (en) | 1988-04-12 |
| EP0161101A2 (en) | 1985-11-13 |
| EP0161101A3 (en) | 1987-07-15 |
| DE3572199D1 (en) | 1989-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |