ATE45393T1 - Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase. - Google Patents

Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase.

Info

Publication number
ATE45393T1
ATE45393T1 AT85303099T AT85303099T ATE45393T1 AT E45393 T1 ATE45393 T1 AT E45393T1 AT 85303099 T AT85303099 T AT 85303099T AT 85303099 T AT85303099 T AT 85303099T AT E45393 T1 ATE45393 T1 AT E45393T1
Authority
AT
Austria
Prior art keywords
hemicylinder
gas flow
flow passageways
zones
disc holder
Prior art date
Application number
AT85303099T
Other languages
German (de)
English (en)
Inventor
Arthur J Learn
Dale R Debois
Original Assignee
Anicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anicon Inc filed Critical Anicon Inc
Application granted granted Critical
Publication of ATE45393T1 publication Critical patent/ATE45393T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
AT85303099T 1984-05-04 1985-05-01 Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase. ATE45393T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/607,065 US4582020A (en) 1984-05-04 1984-05-04 Chemical vapor deposition wafer boat
EP85303099A EP0161101B1 (en) 1984-05-04 1985-05-01 Chemical vapor deposition wafer boat

Publications (1)

Publication Number Publication Date
ATE45393T1 true ATE45393T1 (de) 1989-08-15

Family

ID=24430661

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85303099T ATE45393T1 (de) 1984-05-04 1985-05-01 Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase.

Country Status (7)

Country Link
US (1) US4582020A (https=)
EP (1) EP0161101B1 (https=)
JP (1) JPS60243272A (https=)
AT (1) ATE45393T1 (https=)
AU (1) AU4195985A (https=)
CA (1) CA1234972A (https=)
DE (1) DE3572199D1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641604A (en) * 1984-05-04 1987-02-10 Anicon, Inc. Chemical vapor deposition wafer boat
AU6519986A (en) * 1985-11-18 1987-05-21 Anicon Inc. Quartz 'boat' for chemical vapor deposition of semiconductor wafers
JPS62134936A (ja) * 1985-12-05 1987-06-18 アニコン・インコ−ポレ−テツド 腐食耐性をもつたウエ−フア−・ボ−ト及びその製造法
JPH0736418B2 (ja) * 1986-05-19 1995-04-19 富士通株式会社 ウエーハキャリア
US4720395A (en) * 1986-08-25 1988-01-19 Anicon, Inc. Low temperature silicon nitride CVD process
JPH0555545U (ja) * 1991-12-25 1993-07-23 国際電気株式会社 縦型減圧ｃｖｄ装置用ボート
JP3473715B2 (ja) * 1994-09-30 2003-12-08 信越半導体株式会社 石英ガラス製ウェーハボート
US5618351A (en) * 1995-03-03 1997-04-08 Silicon Valley Group, Inc. Thermal processing apparatus and process
US20070243317A1 (en) * 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
JP5457043B2 (ja) * 2009-01-30 2014-04-02 東洋炭素株式会社 Ｃｖｄ方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179326A (en) * 1976-04-22 1979-12-18 Fujitsu Limited Process for the vapor growth of a thin film
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
JPS5364676A (en) * 1976-11-22 1978-06-09 Hitachi Ltd Treating apparatus in gas phase
DE2746427A1 (de) * 1977-10-15 1979-04-19 Itt Ind Gmbh Deutsche Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben
CA1158109A (en) * 1981-01-14 1983-12-06 George M. Jenkins Coating of semiconductor wafers and apparatus therefor

Also Published As

Publication number Publication date
EP0161101B1 (en) 1989-08-09
US4582020A (en) 1986-04-15
AU4195985A (en) 1985-11-07
JPS6257709B2 (https=) 1987-12-02
JPS60243272A (ja) 1985-12-03
CA1234972A (en) 1988-04-12
EP0161101A2 (en) 1985-11-13
EP0161101A3 (en) 1987-07-15
DE3572199D1 (en) 1989-09-14

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EEIH Change in the person of patent owner
REN Ceased due to non-payment of the annual fee