ATE45393T1 - Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase. - Google Patents
Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase.Info
- Publication number
- ATE45393T1 ATE45393T1 AT85303099T AT85303099T ATE45393T1 AT E45393 T1 ATE45393 T1 AT E45393T1 AT 85303099 T AT85303099 T AT 85303099T AT 85303099 T AT85303099 T AT 85303099T AT E45393 T1 ATE45393 T1 AT E45393T1
- Authority
- AT
- Austria
- Prior art keywords
- hemicylinder
- gas flow
- flow passageways
- zones
- disc holder
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/607,065 US4582020A (en) | 1984-05-04 | 1984-05-04 | Chemical vapor deposition wafer boat |
EP85303099A EP0161101B1 (de) | 1984-05-04 | 1985-05-01 | Halbleiterscheibenhalterung für die chemische Abscheidung aus der Gasphase |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE45393T1 true ATE45393T1 (de) | 1989-08-15 |
Family
ID=24430661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT85303099T ATE45393T1 (de) | 1984-05-04 | 1985-05-01 | Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4582020A (de) |
EP (1) | EP0161101B1 (de) |
JP (1) | JPS60243272A (de) |
AT (1) | ATE45393T1 (de) |
AU (1) | AU4195985A (de) |
CA (1) | CA1234972A (de) |
DE (1) | DE3572199D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4641604A (en) * | 1984-05-04 | 1987-02-10 | Anicon, Inc. | Chemical vapor deposition wafer boat |
AU6519986A (en) * | 1985-11-18 | 1987-05-21 | Anicon Inc. | Quartz 'boat' for chemical vapor deposition of semiconductor wafers |
JPS62134936A (ja) * | 1985-12-05 | 1987-06-18 | アニコン・インコ−ポレ−テツド | 腐食耐性をもつたウエ−フア−・ボ−ト及びその製造法 |
JPH0736418B2 (ja) * | 1986-05-19 | 1995-04-19 | 富士通株式会社 | ウエーハキャリア |
US4720395A (en) * | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
JPH0555545U (ja) * | 1991-12-25 | 1993-07-23 | 国際電気株式会社 | 縦型減圧cvd装置用ボート |
JP3473715B2 (ja) * | 1994-09-30 | 2003-12-08 | 信越半導体株式会社 | 石英ガラス製ウェーハボート |
US5618351A (en) * | 1995-03-03 | 1997-04-08 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
US20070243317A1 (en) * | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
JP5457043B2 (ja) * | 2009-01-30 | 2014-04-02 | 東洋炭素株式会社 | Cvd方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4179326A (en) * | 1976-04-22 | 1979-12-18 | Fujitsu Limited | Process for the vapor growth of a thin film |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
JPS5364676A (en) * | 1976-11-22 | 1978-06-09 | Hitachi Ltd | Treating apparatus in gas phase |
DE2746427A1 (de) * | 1977-10-15 | 1979-04-19 | Itt Ind Gmbh Deutsche | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben |
CA1158109A (en) * | 1981-01-14 | 1983-12-06 | George M. Jenkins | Coating of semiconductor wafers and apparatus therefor |
JPS57132331A (en) * | 1981-02-06 | 1982-08-16 | Ricoh Co Ltd | Chemical vapor deposition and device therefor |
-
1984
- 1984-05-04 US US06/607,065 patent/US4582020A/en not_active Expired - Lifetime
-
1985
- 1985-04-25 CA CA000480118A patent/CA1234972A/en not_active Expired
- 1985-05-01 AT AT85303099T patent/ATE45393T1/de not_active IP Right Cessation
- 1985-05-01 EP EP85303099A patent/EP0161101B1/de not_active Expired
- 1985-05-01 DE DE8585303099T patent/DE3572199D1/de not_active Expired
- 1985-05-02 JP JP60093957A patent/JPS60243272A/ja active Granted
- 1985-05-03 AU AU41959/85A patent/AU4195985A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPS6257709B2 (de) | 1987-12-02 |
EP0161101B1 (de) | 1989-08-09 |
EP0161101A2 (de) | 1985-11-13 |
US4582020A (en) | 1986-04-15 |
CA1234972A (en) | 1988-04-12 |
AU4195985A (en) | 1985-11-07 |
JPS60243272A (ja) | 1985-12-03 |
EP0161101A3 (en) | 1987-07-15 |
DE3572199D1 (en) | 1989-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE45393T1 (de) | Halbleiterscheibenhalterung fuer die chemische abscheidung aus der gasphase. | |
US3183130A (en) | Diffusion process and apparatus | |
US3916822A (en) | Chemical vapor deposition reactor | |
JPS5742161A (en) | Semiconductor and production thereof | |
FR2455800A1 (fr) | Cellule solaire, notamment au silicium, dont la construction evite les effets nuisibles des differences de dilatation sur l'integrite de la cellule | |
KR940016668A (ko) | 수직 보트 및 웨이퍼 지지체 | |
GB1152444A (en) | Heating Element suitable for use in the Epitaxial Deposition of Semiconductor Materials | |
US4802842A (en) | Apparatus for manufacturing semiconductor device | |
US3645545A (en) | Entrance-exit atmospheric isolation device | |
US3524776A (en) | Process for coating silicon wafers | |
JPS55167041A (en) | Vertical type gaseous phase growth device | |
US5741131A (en) | Stacking system for substrates | |
EP0167374A3 (de) | Scheibenbehälter zum chemischen Abscheiden aus der Dampfphase | |
JPS55121650A (en) | Cvd device | |
CN216288374U (zh) | 一种晶圆成膜装置 | |
JPS55121648A (en) | Cvd device | |
JPS56108527A (en) | Diffusion of impurity | |
JPS626335B2 (de) | ||
JPS56153775A (en) | Semiconductor integrated circuit | |
JP2723540B2 (ja) | 減圧cvd装置 | |
SE8703182L (sv) | Reaktionscell foer epitaxiell tillvaext av halvledarmaterial | |
JPS53118368A (en) | Semiconductor heat diffusion device | |
JPS56116671A (en) | Semiconductor device | |
JPS5447580A (en) | Dislodging device of plate form objects | |
JPS57114226A (en) | Substrate holder for vapor growth |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
EEIH | Change in the person of patent owner | ||
REN | Ceased due to non-payment of the annual fee |