JPS60242649A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPS60242649A
JPS60242649A JP6358485A JP6358485A JPS60242649A JP S60242649 A JPS60242649 A JP S60242649A JP 6358485 A JP6358485 A JP 6358485A JP 6358485 A JP6358485 A JP 6358485A JP S60242649 A JPS60242649 A JP S60242649A
Authority
JP
Japan
Prior art keywords
resin
semiconductor pellet
groove
pellet
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6358485A
Other languages
Japanese (ja)
Other versions
JPS6120144B2 (en
Inventor
Tomio Yamada
富男 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6358485A priority Critical patent/JPS60242649A/en
Publication of JPS60242649A publication Critical patent/JPS60242649A/en
Publication of JPS6120144B2 publication Critical patent/JPS6120144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent resin from shrinking or expanding due to the temperature cycling thereof and to improve the strength against peeling, by providing a groove having projections on the inner walls thereof, in the direction intersecting with the line connecting a semiconductor pellet and a tightening hole. CONSTITUTION:A semiconductor pellet 3' is attached to a first main face 1a of a heat-conductive plate 1. A part of the first main face 1a and a second main face 1b are exposed, and a resin sealing body 6' is formed on the heat-conductive plate 1 so as to cover the semiconductor pellet 3'. On the semiconductor pellet 3, V-shaped grooves 4 are provided so as to surround the joint portion of the semiconductor pellet so that the resin penetrates into these grooves, while holes 5 are also provided for preventing the resin from expanding or shrinking. A groove 7 which is provided between these holes 5 is oriented in the direction intersecting with the line connecting a tightening hole 2 and the joint portion 3 of the semiconductor pellet. According to such construction, the resin on the side A1 is prevented from moving toward the side A2 due to thermal shrinkage thereof after sealing the device with the resin.

Description

【発明の詳細な説明】 [技術分野] 本発明は樹脂封止型半導体装置、特に出力用の樹脂封止
型半導体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a resin-sealed semiconductor device, particularly to a resin-sealed semiconductor device for output.

[背景技術] 樹脂封止型半導体装置は基板上に接続した半導体ペレッ
トの電極と外部リードとの電気的接続を終えた後に樹脂
封止することにより実装してなるもので、出力用半導体
集積回路装置の場合は放熱の必要性および耐湿性向上の
観点から基板として例えば第1図(、)〜(c)に示す
ような放熱板が考えられた。第1図(、)は放熱板の平
面図、第1図(b)は第1図(、)におけるAt A2
視断面図そして第1図(e)は第1図(、)におけるB
−B断面面図である。まず、第1図(、)において、1
は放熱板を成す熱伝導性板材、2は締付用ボルトを通す
ための孔、3は半導体ベレット接続部、4は樹脂喰い込
み用で、半導体ペレット接続部近傍での樹脂の横方向へ
の移動防止のため設けられる。このようにV溝を設ける
理由は、これがないと樹脂には横方向への移動に抗する
引掛りがなく熱サイクルにより樹脂が伸縮し、それに基
づいてペレットに剪断応力がかかり易くなる゛からであ
る。また、板材と樹脂との界面につたわる水の侵入経路
を長くするためにある。そして5は樹脂の熱サイクルに
よる伸縮をより有効に防止するための穴である。第1図
(b)において破線で囲まれた領域6内は半導体ベレッ
ト3゛を覆うようにして樹脂封止される喰所である。
[Background Art] Resin-sealed semiconductor devices are mounted by sealing with resin after electrical connection between the electrodes of a semiconductor pellet connected to a substrate and external leads is completed, and it is used as an output semiconductor integrated circuit. In the case of a device, from the viewpoint of heat dissipation and improvement of moisture resistance, a heat dissipation plate as shown in FIGS. 1(a) to (c), for example, was considered as a substrate. Figure 1 (,) is a plan view of the heat sink, and Figure 1 (b) is At A2 in Figure 1 (,).
A cross-sectional view and FIG. 1(e) is B in FIG. 1(,).
-B is a sectional view. First, in Figure 1 (,), 1
2 is a thermally conductive plate material forming a heat dissipation plate, 2 is a hole for passing a tightening bolt, 3 is a semiconductor pellet connection part, and 4 is a resin biting part, which is used to cut the resin in the lateral direction near the semiconductor pellet connection part. Provided to prevent movement. The reason for providing the V-groove is that without it, the resin would not have any hooks to resist lateral movement, and the resin would expand and contract due to thermal cycles, making it easier for shear stress to be applied to the pellet. be. It is also provided to lengthen the path for water to enter the interface between the plate material and the resin. And 5 is a hole for more effectively preventing expansion and contraction of the resin due to thermal cycles. In FIG. 1(b), a region 6 surrounded by a broken line is a hole which is sealed with resin so as to cover the semiconductor pellet 3'.

このような放熱板を用いた樹脂封止型半導体装置におい
ては、樹脂封止部と締付用孔との間隔が狭く、その結果
、ボルトによる締付けにより樹脂と放熱板との間が剥れ
易く、隙間の生じ易い状態となり、耐湿性の低下を招く
とともに温度サイクルに基づく樹脂の伸縮がさらに容易
となりベレットにかかる剪断応力が強くなりベレットに
クラックが生じたり、ワイヤの断線が生じたりする問題
点があった。特に、樹脂はA2側においては放熱板の上
面のみならず側面にまで存在し、A2からA、に向う方
向の力に対しては強いが、その反対側における樹脂(締
付用孔に近い部分の樹脂)は単に放熱板上に位置してい
るにすぎずA、からA2に向う方向の力に対して極めて
弱く、熱サイクルによって半導体ベレットはA1からA
2に向う剪断応力を受けるからである。すなわち、ペレ
ット部を中心として伸縮が生じるのではなく、A2側面
を中心として伸縮が生じるのであるから、ベレットの受
ける剪断応力は意外に強いものとなる。また、第1図(
a)= (c)にみちれるように穴5はストレートな構
造すなわち樹脂がたて方向に対して引っ掛る構造になっ
ていないため矢印方向に加わるボルト締付は力Wに対し
で弱い。このため、ボルトによる締付けにより樹脂と放
熱板との間が剥れ易く、隙間が生じ易い状態となる。そ
れゆえ、樹脂喰い込み用■溝は樹脂の横方向への移動防
止に大きな効果を発揮し得なかった。
In a resin-sealed semiconductor device using such a heat sink, the distance between the resin sealing part and the tightening hole is narrow, and as a result, the gap between the resin and the heat sink is likely to separate when tightened with bolts. , the problem is that gaps are likely to form, leading to a decrease in moisture resistance, and the resin expands and contracts more easily due to temperature cycles, which increases the shear stress applied to the pellet, causing cracks in the pellet and wire breakage. was there. In particular, on the A2 side, resin exists not only on the top surface of the heat sink but also on the side surfaces, and is strong against forces in the direction from A2 to A. The resin) is simply located on the heat dissipation plate and is extremely weak against the force in the direction from A to A2, and due to thermal cycles the semiconductor pellet will move from A1 to A2.
This is because the shearing stress directed toward 2 is applied. That is, since the expansion and contraction occurs not around the pellet part but around the A2 side surface, the shear stress that the pellet receives is unexpectedly strong. Also, Figure 1 (
As shown in a)=(c), the hole 5 has a straight structure, that is, it does not have a structure in which the resin is caught in the vertical direction, so the bolt tightening applied in the direction of the arrow is weak against the force W. Therefore, when the bolts are tightened, the resin and the heat dissipation plate are likely to separate, resulting in a gap. Therefore, the groove for biting in the resin could not be very effective in preventing the resin from moving in the lateral direction.

なお、半導体ベレット及びワイヤを包囲している近傍の
樹脂を拘束する構造が特開昭52−!29379号公報
(昭和51年4月23日公開)によって知られている。
Note that the structure for restraining the resin surrounding the semiconductor pellet and the wire is disclosed in Japanese Patent Application Laid-open No. 52-1989! It is known from Publication No. 29379 (published on April 23, 1975).

しかし、かかる公報に開示されでいる樹脂封止型半導体
装置においては、放熱板と樹脂との間が剥離しやすく、
耐湿性の点で不充分である。
However, in the resin-sealed semiconductor device disclosed in this publication, separation between the heat sink and the resin is likely to occur;
Insufficient moisture resistance.

本発明は以上の問題点の認識にもとづいて成し得たもの
である。
The present invention has been achieved based on the recognition of the above problems.

[発明の目的J 本発明は耐湿性の向上をはかった高信頼度の樹脂封止型
半導体装置を提供することを目的とするものである。
[Objective of the Invention J] An object of the present invention is to provide a highly reliable resin-sealed semiconductor device with improved moisture resistance.

[発明の概要] 上記目的を達成するための本発明は以下の構成によって
特徴づけられている。
[Summary of the Invention] The present invention for achieving the above object is characterized by the following configuration.

第1主面およびこの主面に対して反対側に位置する第2
主面とをもつ熱伝導性板材と、第1主面部分にとりつけ
られた半導体ベレットと、 第1主面の一部分および第2主面を露出するようにして
上記半導体ペレツtを覆う樹脂封止体と、その樹脂封止
体内であって露出して1・る第1主面の一部分に近接し
て設けられ、内壁部tこ突起をもった溝と、 上記半導体ベレットをとり囲むように設けられた上記溝
よりも浅い溝と、 を有する樹脂封止型半導体装置。
A first main surface and a second main surface located on the opposite side to this main surface.
a thermally conductive plate material having a main surface; a semiconductor pellet attached to the first main surface; and a resin seal that covers the semiconductor pellet t so as to expose a portion of the first main surface and the second main surface. a groove provided adjacent to a portion of the first principal surface exposed in the resin-sealed body and having a projection on the inner wall; and a groove provided so as to surround the semiconductor pellet; A resin-sealed semiconductor device comprising: a groove shallower than the above-mentioned groove;

[実施例] 以下本発明を具体的な実施例により説明する。[Example] The present invention will be explained below using specific examples.

第2図(a)、 (b)は本発明の一実施例に係i(脂
封止型半導体装置用放熱板を示すもので、第1図(、)
は平面図、第1図(b)は第1図(、)におけるA1−
A 2断面面図である。
FIGS. 2(a) and 2(b) show a heat sink for a fat-sealed semiconductor device according to an embodiment of the present invention;
is a plan view, and Fig. 1(b) is A1- in Fig. 1(,).
A2 is a sectional view.

1は熱伝導性板材であり、第2図(b)に示すように第
1主面1aおよびこの主面に対して反対側に位置する第
2主面1bを有する。2は締付用孔、3は半導対ベレッ
ト接続部、4は半導体ペレ・ノド接続部をとり囲むよう
に形成された樹脂喰(1込み用■溝、5は樹脂伸縮防止
用穴、6は樹脂封止すべき箇所、7は樹脂伸縮防止用穴
5相互間に設けられた溝、8はこの溝の内壁に設けられ
た突起である。この溝7が締付用孔2と半導体ベレット
接続部3とを結ぶ線と交差する方向に向けら八、2つの
穴5の間にまたがって設けられてしする。
Reference numeral 1 denotes a thermally conductive plate material, which has a first main surface 1a and a second main surface 1b located on the opposite side to this main surface, as shown in FIG. 2(b). 2 is a tightening hole, 3 is a semiconductor pair pellet connection part, 4 is a resin groove formed to surround the semiconductor plate/node connection part (1 is included), 5 is a hole for preventing resin expansion and contraction, 6 is a part to be sealed with resin, 7 is a groove provided between the holes 5 for preventing resin expansion and contraction, and 8 is a protrusion provided on the inner wall of this groove.This groove 7 connects the tightening hole 2 and the semiconductor pellet. The hole 5 is oriented in a direction intersecting the line connecting the connecting portion 3, and is provided so as to span between the two holes 5.

第2図(c)は上記構成の放熱板を用り)で組立てられ
た樹脂封止型半導体装置の断面図を示し、特に第1図(
a)におけるAt A2視断面に対応している図である
。第2図(c)に示す如く本発明の樹脂封止型半導体装
置は熱伝導性板材1の第1主面1bに対して半導体ペレ
ット3゛が取り付けられている。そして、第1主面1a
の一部分および第2主面1bを露出し、上記半導体ペレ
ット3゛を覆うようにして樹脂封止体6゛が熱伝導性板
材1に対して形成されている。なお、第2図(c)にお
いて外部リードおよびその外部リードと半導体ペレット
の電極とを電気的に接続するワイヤは省略しである。
FIG. 2(c) shows a cross-sectional view of a resin-sealed semiconductor device assembled using a heat sink having the above-mentioned configuration, and in particular, FIG.
It is a figure corresponding to the At A2 view cross section in a). As shown in FIG. 2(c), in the resin-sealed semiconductor device of the present invention, a semiconductor pellet 3' is attached to the first principal surface 1b of the thermally conductive plate 1. And the first main surface 1a
A resin encapsulant 6' is formed on the thermally conductive plate 1 so as to expose a portion of the semiconductor pellet 3' and the second main surface 1b and cover the semiconductor pellet 3'. In addition, in FIG. 2(c), the external lead and the wire electrically connecting the external lead and the electrode of the semiconductor pellet are omitted.

以上説明した本発明によれば、以下の理由により目的が
達成される。
According to the present invention explained above, the object is achieved for the following reasons.

第2図(c)において、樹脂封止された後におけるA、
側の樹脂が熱収縮によってA2側に移動せんとするのが
抑制される。すなわちボルト締めによりその部分におい
て樹脂と放熱板との開に若干の隙間が生じてもその溝7
によって樹脂のA2側への移動がくいとめられ、樹脂の
伸縮に基づいて半導体ペレット部に加わるストレスが小
さくなる。
In FIG. 2(c), A after being sealed with resin,
The resin on the side is prevented from moving toward the A2 side due to thermal contraction. In other words, even if there is a slight gap between the resin and the heat sink at that part due to bolt tightening, the groove 7
This prevents the resin from moving toward the A2 side, and reduces the stress applied to the semiconductor pellet portion due to the expansion and contraction of the resin.

その結果、半導体ペレットクラックの発生あるいはワイ
ヤ断線の発生が防止されるのである。特に、溝7には内
壁に突起8があるので樹脂のA2側への移動を喰いとめ
る効果が極めて天外い。
As a result, the occurrence of semiconductor pellet cracks or wire breakage is prevented. In particular, since the groove 7 has a protrusion 8 on its inner wall, it is extremely effective in preventing the resin from moving toward the A2 side.

またこの突起が剥れ方向Fに対する強度を高める機能を
果す。それゆえ、半導体ペレット近傍での樹脂の横方向
への移動防止に対して設けられた樹脂喰い込み用の浅い
V溝4の目的は充分に発揮できる。それゆえ、内部に突
起をもった溝とそれよりも浅く、かつ半導体ベレットを
とり囲むV溝の組み合せは耐湿性向上に極めて効果があ
る。
The protrusions also function to increase the strength in the peeling direction F. Therefore, the purpose of the shallow V-groove 4 for biting into the resin, which is provided to prevent the resin from moving in the lateral direction near the semiconductor pellet, can be fully achieved. Therefore, the combination of a groove with an internal protrusion and a shallower V-groove surrounding the semiconductor pellet is extremely effective in improving moisture resistance.

上述した内壁に突起のある溝は例えば第3図(a)、 
(b)に示すように2回のプレス工程で形成することが
できる。
The above-mentioned groove with a protrusion on the inner wall is illustrated in FIG. 3(a), for example.
As shown in (b), it can be formed in two press steps.

第1のプレス工程は幅d2、高さt2(放熱板の厚さ1
.>12)の第1のプレス上型9−1により行う。
The first pressing process has a width d2 and a height t2 (the thickness of the heat sink is 1).
.. >12) using the first press upper mold 9-1.

第2の工程は第1のプレス工程において使用した第1の
プレス上型より広い幅d2(dl<d2)で低い高さt
i(h < h)の第2プレス上型9−2により行う。
In the second step, a width d2 (dl<d2) and a lower height t than the first press upper die used in the first press step are formed.
This is carried out using the second press upper die 9-2 of i (h < h).

これによって、第3図(、)で形成されている溝7の稜
7aはその溝7の内部におし下げられ、突起8となる。
As a result, the ridge 7a of the groove 7 formed in FIG.

このように樹脂剥離防止の加工は放熱板の第1主面側か
らの2段階のプレス加工によって容易に達成できる。
In this way, processing to prevent resin peeling can be easily achieved by two-step press processing from the first main surface side of the heat sink.

なお、この溝を貫通孔にしないのは放熱性が低くならな
いようにするためである。しかし、放熱性が多少低くな
っても問題にならない場合、この溝は貫通孔の形態をな
してもよいことはいうまでもない。
Note that the reason why this groove is not made into a through hole is to prevent the heat dissipation from becoming low. However, it goes without saying that this groove may be in the form of a through hole if a somewhat lower heat dissipation is not a problem.

また、この突起8は溝の内壁のうちA2側(すなわちベ
ンツF側)の内壁にあれば充分なので、第4図に示すよ
うにA2側の内壁にのみ突起8が形成されるようにして
もよい。
Furthermore, since it is sufficient that the protrusion 8 is formed on the inner wall of the groove on the A2 side (that is, the Benz F side), the protrusion 8 may be formed only on the inner wall on the A2 side as shown in FIG. good.

このように本発明によれば、半導体ベレットと締付用孔
とを結ぶ線と交差する方向に、内壁に突起のある溝が形
成されているので樹脂の温度サイクルによる伸縮が阻止
され、剥れ強度も強くなる。
As described above, according to the present invention, since the groove with the protrusion is formed on the inner wall in the direction intersecting the line connecting the semiconductor pellet and the tightening hole, the expansion and contraction due to the temperature cycle of the resin is prevented, and peeling is prevented. Strength also increases.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(e)は本発明に先立って考えられた樹
脂封止型半導体装置用放熱板の例を示すもので、(a)
が平面図、(b)がA、−A2視断面図、(c)がB−
B視断面図である。第2図(a)は本発明の一実施例に
係る樹脂封止型半導体装置用放熱板の平面図、第2図(
b)は第2図(a)のA、−A2視断面図、第2図(c
)は第2図(、)に示した放熱板を用いて組立てられた
樹脂封止型半導体装置の断面図である。 #3図(a)、 (b)は第2図(、)に示した放熱板
を得るためのプレス工程を示す要部断面図、第4図は本
発明に適用される放熱板の他の実施形態を示す断面図で
ある。 1・・熱伝導性板材、2・・締付用孔、3・・半導体ペ
レット接続部、3°・・半導体ペレット、4・・樹脂喰
い込み用V溝、5・・樹脂伸縮防止用穴、6・・樹脂封
止すべき箇所、6゛・・樹脂封止体、7・・溝、8・・
突起、9−1.9−2第 1 図 4 (b)
Figures 1 (a) to (e) show examples of heat sinks for resin-sealed semiconductor devices that were conceived prior to the present invention; (a)
is a plan view, (b) is a sectional view of A,-A2, and (c) is B-
It is a sectional view from B. FIG. 2(a) is a plan view of a heat sink for a resin-sealed semiconductor device according to an embodiment of the present invention;
b) is a sectional view of A, -A2 in Fig. 2(a), Fig. 2(c)
) is a sectional view of a resin-sealed semiconductor device assembled using the heat sink shown in FIG. 2(,). #3 Figures (a) and (b) are sectional views of essential parts showing the pressing process for obtaining the heat sink shown in Figure 2 (,), and Figure 4 is a cross-sectional view of another heat sink applied to the present invention. It is a sectional view showing an embodiment. 1. Thermal conductive plate material, 2. Tightening hole, 3. Semiconductor pellet connection part, 3°... Semiconductor pellet, 4. V groove for resin biting, 5. Hole for preventing resin expansion and contraction. 6...Position to be sealed with resin, 6゛...Resin sealing body, 7...Groove, 8...
Projection, 9-1.9-2 No. 1 Figure 4 (b)

Claims (1)

【特許請求の範囲】 第1主面およびこの主面に対して反対側に位置する第2
主面とをもつ熱伝導性板材と、第1主面部分にとりつけ
られた半導体ペレットと、 第1主面の一部分および第2主面を露出するようにして
上記半導体ベレットを覆う樹脂封止体と、その樹脂封止
体内であって露出している第1主面の一部分に近接して
設けられ、内壁部に突起をもった溝と、 上記半導体ベレットをとり囲むように設けられた上記溝
よりも浅い溝と、 を有する樹脂封止型半導体装置。
[Claims] A first main surface and a second main surface located on the opposite side to this main surface.
a thermally conductive plate material having a principal surface; a semiconductor pellet attached to the first principal surface; and a resin sealing body covering the semiconductor pellet so as to expose a portion of the first principal surface and the second principal surface. a groove provided in the resin molded body in close proximity to a portion of the exposed first principal surface and having a protrusion on the inner wall; and the groove provided so as to surround the semiconductor pellet. A resin-sealed semiconductor device having a groove shallower than that of the semiconductor device.
JP6358485A 1985-03-29 1985-03-29 Resin sealed semiconductor device Granted JPS60242649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6358485A JPS60242649A (en) 1985-03-29 1985-03-29 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6358485A JPS60242649A (en) 1985-03-29 1985-03-29 Resin sealed semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3553778A Division JPS54128279A (en) 1978-03-29 1978-03-29 Heat sink for resin-sealed semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS60242649A true JPS60242649A (en) 1985-12-02
JPS6120144B2 JPS6120144B2 (en) 1986-05-21

Family

ID=13233461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6358485A Granted JPS60242649A (en) 1985-03-29 1985-03-29 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS60242649A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6426848U (en) * 1987-04-09 1989-02-15
US5514913A (en) * 1991-12-05 1996-05-07 Consorzio Per La Ricerca Sulla Microelettronica Net Mezzogiorno Resin-encapsulated semiconductor device having improved adhesion
US6002173A (en) * 1991-12-20 1999-12-14 Sgs-Thomson Microelectronics S.R.L. Semiconductor device package with metal-polymer joint of controlled roughness

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6426848U (en) * 1987-04-09 1989-02-15
US5514913A (en) * 1991-12-05 1996-05-07 Consorzio Per La Ricerca Sulla Microelettronica Net Mezzogiorno Resin-encapsulated semiconductor device having improved adhesion
US5766985A (en) * 1991-12-05 1998-06-16 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for encapsulating a semiconductor device having a heat sink
US6002173A (en) * 1991-12-20 1999-12-14 Sgs-Thomson Microelectronics S.R.L. Semiconductor device package with metal-polymer joint of controlled roughness

Also Published As

Publication number Publication date
JPS6120144B2 (en) 1986-05-21

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