JP2509607B2 - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JP2509607B2 JP2509607B2 JP6571587A JP6571587A JP2509607B2 JP 2509607 B2 JP2509607 B2 JP 2509607B2 JP 6571587 A JP6571587 A JP 6571587A JP 6571587 A JP6571587 A JP 6571587A JP 2509607 B2 JP2509607 B2 JP 2509607B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- plate
- conductive metal
- distance
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
【発明の詳細な説明】 ＜発明の目的＞ （産業上の利用分野） 本発明は樹脂封止型半導体装置の改良に関わるもの
で、特にトランジスタアレイ、SCRアレイなどのパワー
モジュールやパワートランジスタならびにパワーSSORな
どの高出力半導体装置に適用する二重モールドを施した
樹脂封止型半導体の改良に好適する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Field of Industrial Application) The present invention relates to improvement of a resin-encapsulated semiconductor device, and particularly to a power module such as a transistor array and an SCR array, a power transistor, and a power transistor. It is suitable for improving resin-molded semiconductors that have been double-molded and are applied to high-power semiconductor devices such as SSOR.
（従来の技術） 最近の半導体装置は、単一の半導体素子から成るもの
以外に、複数の半導体素子ならびに付属回路部品を一体
としたモジュールタイプが多用されており、その放熱性
を改善するにリードフレームにマウントした半導体素子
と共に、放熱フインもトランスファ成形する方法が採用
されている。(Prior Art) In recent semiconductor devices, in addition to those composed of a single semiconductor element, a module type in which a plurality of semiconductor elements and accessory circuit parts are integrated is widely used. The method of transfer molding the heat dissipation fin together with the semiconductor element mounted on the frame is adopted.
このようなモジュール製品では、複数の半導体素子を
マウントできる寸法の大きいリードフレームを用いるた
めに樹脂封止成形工程中に湾曲して、放熱フインとリー
ドフレームのベッド部間距離が異常に狭くなったり拡げ
られることがある。In such a module product, since a lead frame with a large size that can mount multiple semiconductor elements is used, it bends during the resin encapsulation molding process, and the distance between the heat dissipation fin and the lead frame bed becomes extremely narrow. May be expanded.
このために、樹脂封止（トランスファモールド）工程
を複数回に分けて実施する方法が採用されているため
に、リードフレームのベッドと放熱フイン間の距離を所
望の値に維持できるので、放熱性の改善に役立つことが
多い。For this reason, the method of performing the resin encapsulation (transfer molding) process in multiple steps is adopted, so that the distance between the lead frame bed and the heat dissipation fin can be maintained at a desired value, so that the heat dissipation performance is improved. Often helps to improve.
二重モールドを行った製品の断面を示す第11図により
説明すると、この構造を得るには第１の樹脂封止を終え
た成形品Ａを、リードフレームのベッド部20裏面と放熱
フイン21を僅かな距離を保って配置後、第１の樹脂封止
部22と同様なエポキシ樹脂によって封止成形を行って第
２の樹脂封止部23を設ける。この二重モールド方式の結
果、ベッド部20にダイボンディングした半導体素子24な
らびにリードフレームのリード端子25を架橋する金属細
線26等が埋設すると共に、放熱フイン21の一面は封止樹
脂に連続した状態となり、共に表面を形成する。Referring to FIG. 11 showing the cross section of the product that has been double-molded, in order to obtain this structure, the molded product A that has undergone the first resin encapsulation, After arranging with a slight distance, the second resin sealing portion 23 is provided by performing sealing molding with the same epoxy resin as the first resin sealing portion 22. As a result of this double molding method, the semiconductor element 24 die-bonded to the bed portion 20 and the metal thin wire 26 bridging the lead terminals 25 of the lead frame and the like are embedded, and one surface of the heat dissipation fin 21 is continuous with the sealing resin. And form the surface together.
（発明が解決しようとする問題点） 二重モールド方式を適用した樹脂封止型半導体装置
は、前述のように放熱フインと半導体素子をダイボンデ
ィングしたリードフレームのベッド部間を僅かな距離に
成形し、更にこの隙間に封止樹脂を充填するので熱放熱
性に優れた特徴を持っている。これに反して、前記隙間
には封止樹脂が入り難いので、エアボイドが発生し易
い。又両封止部の境界に機械的衝撃が与えられると、亀
裂やエアギャップが入り易い難点があり、これが基で放
熱特性が劣化する。(Problems to be Solved by the Invention) In the resin-sealed semiconductor device to which the double molding method is applied, as described above, the heat radiation fin and the semiconductor chip are die-bonded to each other to form a small distance between the lead frame beds. In addition, since this gap is filled with the sealing resin, it has excellent heat dissipation properties. On the contrary, since it is difficult for the sealing resin to enter the gap, air voids are likely to occur. Further, when a mechanical shock is applied to the boundary between the both sealing portions, there is a problem that cracks and air gaps are likely to occur, which causes the heat dissipation characteristics to deteriorate.
本発明は上記欠点を除去する新規な樹脂封止型半導体
装置を提供する。The present invention provides a novel resin-encapsulated semiconductor device that eliminates the above drawbacks.
（問題点を解決するための手段） 二重モールド方式を適用した樹脂封止型半導体装置に
おける板状の放熱フインと、リードフレームのベッド部
即ち導電性金属板間を充填する第２の樹脂封止部のエア
ギャップ等を解消するために、極めて狭い隙間につなが
る板状の放熱フインと第１の樹脂封止部間の距離と前記
導電性金属板にマウントした半導体素子と電気的な接続
を図るべく固着した金属細線にはリード端子を連結し、
これに対応する第１の樹脂封止部と板状の放熱フイン間
の距離を準次増大する手法を採用した。又、板状の放熱
フインとリードフレームのベッド部即ち導電性金属板間
の隙間に充填する第２の樹脂封止部に発生するエアギャ
ップ等を解消するために、半導体素子、リード端子及び
金属細線を埋設する第１の樹脂封止部の中、放熱フイン
と反対側に位置し前記導電性金属板に対応する表面をほ
ぼ十字形に露出し、その周りに形成する段部に第２の樹
脂封止部を充填して第１の樹脂封止部を締付けて、エア
ギャップを解消する。(Means for Solving the Problems) A second resin seal for filling the plate-shaped heat dissipation fin in the resin-sealed semiconductor device to which the double molding method is applied and the bed portion of the lead frame, that is, the conductive metal plate. In order to eliminate the air gap etc. of the stop part, the distance between the plate-shaped heat dissipation fin connected to the extremely narrow gap and the first resin sealing part and the electrical connection with the semiconductor element mounted on the conductive metal plate are set. Connect the lead terminal to the thin metal wire that is firmly fixed to
A method of quasi-increasing the distance between the first resin sealing portion and the plate-shaped heat radiation fin corresponding to this is adopted. Further, in order to eliminate an air gap or the like generated in the second resin sealing portion that fills the gap between the plate-shaped heat dissipation fin and the bed portion of the lead frame, that is, the conductive metal plate, the semiconductor element, the lead terminal, and the metal In the first resin encapsulation part in which the thin wire is embedded, the surface corresponding to the conductive metal plate, which is located on the side opposite to the heat dissipation fin, is exposed in a substantially cross shape, and the second part is formed on the step part formed around the surface. The air gap is eliminated by filling the resin sealing portion and tightening the first resin sealing portion.
（作用） 極めて狭い隙間に充填する溶融樹脂の通路を順次縮小
するように配慮しているので、入り易く従ってエアボイ
ドの発生を防止して、樹脂封止型半導体装置に必要な絶
縁性と熱放散性を確保する。(Function) Since the passage of the molten resin filling the extremely narrow gap is gradually reduced, it is easy to enter, thus preventing the generation of air voids and insulating and heat dissipation required for the resin-sealed semiconductor device. Secure the sex.
十字形を構成する辺の一方は、封止樹脂成形工程にお
ける溶融樹脂のダムとして機能し、更に金型に配置した
被封止対象内では段部の設置により隙間に充填すべき溶
融樹脂に流れができて脱気が確実となり、結果的にエア
ボイドの排除ひいては樹脂封止型半導体装置の信頼性を
向上する。One of the sides forming the cross shape functions as a dam for the molten resin in the molding process of the sealing resin, and within the object to be sealed placed in the mold, the flow of the molten resin that should be filled in the gap due to the installation of the step As a result, deaeration is ensured, and as a result, the elimination of air voids and thus the reliability of the resin-sealed semiconductor device is improved.
（実施例） 本発明に関わる実施例を第１図〜第10図を参照して説
明する。本実施例は、６個の半導体素子で構成する回路
（第５図参照）を持つ樹脂封止型半導体装置であり、各
半導体素子をマウントするリードフレームの複雑な構造
を図２図の上面図に示す。(Example) An example according to the present invention will be described with reference to Figs. The present embodiment is a resin-sealed semiconductor device having a circuit (see FIG. 5) composed of six semiconductor elements, and shows a complicated structure of a lead frame for mounting each semiconductor element in a top view of FIG. Shown in.
ベッド部即ち導電性金属板１…にマウントされる各半
導体素子２…によるパターンは、複雑であると共に高密
度であることが良く分る。一方リードフレームは第２図
などに示すように導電性金属板１と内部リード端子３な
らびに後述するように金属細線５をボンディングする外
部リード端子４の３部分の高さを変えるように折曲げ
て、導電性金属板１…を最低の位置にする。即ち、導電
性金属板１…をいわゆるDepressタイプの構造とする。It can be clearly seen that the pattern formed by the semiconductor elements 2 mounted on the bed portion, that is, the conductive metal plates 1 is complicated and has a high density. On the other hand, the lead frame is bent so as to change the heights of the conductive metal plate 1 and the inner lead terminals 3 as shown in FIG. 2 and the outer lead terminals 4 for bonding the fine metal wires 5 as will be described later. , The conductive metal plates 1 are set to the lowest position. That is, the conductive metal plates 1 ... Have a so-called Depress type structure.
第１図に明らかなように、半導体素子２…に設けるパ
ッド２′と外部リード端子４間には通常のボンディング
法によって金属細線５を架橋して電気的に接続し、これ
をエンキャップ剤６によって被覆後公知のエポキシ樹脂
によるトランスファモールド工程を施して第１の樹脂封
止部７を設ける。この結果半導体素子２、内外部リード
端子３、４は、金属細線５とエンキャップ剤６が埋設さ
れるものの、導電性金属板１の裏面は、第１の樹脂封止
部７表面に露出する。As is apparent from FIG. 1, a thin metal wire 5 is bridged and electrically connected between the pad 2'provided on the semiconductor element 2 ... And the external lead terminal 4 by a normal bonding method. After the coating, a transfer molding process using a known epoxy resin is performed to provide the first resin sealing portion 7. As a result, in the semiconductor element 2 and the inner and outer lead terminals 3 and 4, the thin metal wire 5 and the encapsulating agent 6 are embedded, but the back surface of the conductive metal plate 1 is exposed on the surface of the first resin sealing portion 7. .
更に露出した導電性金属板１に対して僅かの距離を保
って、板状の放熱フイン８を樹脂モールド用金型内に設
けて、第２の樹脂封止部９を設置する。この場合、｛板
状の放熱フイン８と導電性金属板１の距離C1＜内部リー
ド３に対応する第１の樹脂封止部７と板状の放熱フイン
８間の距離C2＜外部リード４に対応する第１の樹脂封止
部７と板状の放熱フイン８間の距離C3｝として溶融樹脂
が流易いよう配慮している。Further, a plate-shaped heat radiation fin 8 is provided in the resin molding die while keeping a slight distance from the exposed conductive metal plate 1, and the second resin sealing portion 9 is installed. In this case, {distance C 1 between the plate-shaped heat radiation fin 8 and the conductive metal plate 1 <distance C 2 between the first resin sealing portion 7 corresponding to the inner lead 3 and the plate-shaped heat radiation fin 8 <external lead The distance C 3 } between the first resin sealing portion 7 and the plate-shaped heat radiation fin 8 corresponding to No. 4 is designed so that the molten resin can easily flow.
C2の距離を維持するには、板状の放熱フイン８の所定
の位置即ち内部リード端子３に対向する位置にプレス加
工で凹部10を設置するか、第９図に明らかなように第１
の樹脂封止部７の厚さを小さくしても良い。なおトラン
スファモールド工程におけるゲート位置はC3方向に設け
て前記のように溶融樹脂の流れを改善して最も狭いC1に
おける通過を良好にする。In order to maintain the distance C 2 , the recess 10 is formed by pressing at a predetermined position of the plate-shaped heat dissipation fin 8, that is, a position facing the internal lead terminal 3, or as shown in FIG.
The thickness of the resin sealing portion 7 may be reduced. The gate position in the transfer molding step is provided in the C 3 direction to improve the flow of the molten resin and improve the passage in the narrowest C 1 as described above.
更に溶融樹脂の流れに配慮した例が第３図、第６図〜
第９図であり、結果的には第２の樹脂封止部９が第１の
樹脂封止部７を締付けて、板状の放熱フイン８と導電性
金属板１間のエアギャップを防止する。Further examples in which the flow of molten resin is taken into consideration are shown in FIGS.
It is FIG. 9, and as a result, the second resin sealing portion 9 tightens the first resin sealing portion 7 to prevent an air gap between the plate-shaped heat radiation fin 8 and the conductive metal plate 1. .
第４図は、第２の樹脂封止部９の形成ならびにCut工
程を終えた樹脂封止型半導体装置の上面図であり、第１
の樹脂封止部７と第２の樹脂封止部９が連続状態にな
り、共に表面を構成している。しかし、第１の樹脂封止
部７の外側には7a〜7dから成る段部を設置している。FIG. 4 is a top view of the resin-encapsulated semiconductor device which has completed the formation of the second resin encapsulation portion 9 and the Cut process.
The resin encapsulation portion 7 and the second resin encapsulation portion 9 are in a continuous state and together form the surface. However, on the outside of the first resin encapsulation portion 7, stepped portions 7a to 7d are installed.
第３図イは、第１の樹脂封止部７形成後不要部分を除
去した成形品の平面図であり、これをＡ−Ａ線で切断し
た図が第３図ロである。FIG. 3A is a plan view of a molded product from which unnecessary portions have been removed after the first resin sealing portion 7 is formed, and FIG. 3B is a view taken along the line AA.
この段部7a〜7dは第２の樹脂封止部９との密着を良く
するために、半導体素子の外側言い換えると導電性金属
板１…の中間位置に形成される。その成形には、段部7a
〜7dに相当する上型キャビティの成形型を使用し、かつ
導電性金属板１…の表面を下型キャビティの表面に密着
配置してトランスファモールド工程を実施して得られ
る。The step portions 7a to 7d are formed outside the semiconductor element, in other words, at an intermediate position between the conductive metal plates 1 ... In order to improve the close contact with the second resin sealing portion 9. The molding has a step 7a
It is obtained by using a mold for the upper mold cavity corresponding to .about.7d, and placing the surface of the conductive metal plate 1 ... In close contact with the surface of the lower mold cavity to carry out the transfer molding process.
第６図〜第８図は第４図に示したＢ−Ｂ、Ｃ−Ｃ、Ｄ
−Ｄの各線に沿って切断した製品の断面図であり、第１
の樹脂封止部７の段部7a〜7dに対応してエポキシ樹脂で
構成する第２の樹脂封止部9a（図では9aのみ記載）が充
填され、第７図に示す段部テーパ7eは第２の樹脂封止部
９に対してUnder Cutの逆テーパであり、好ましくは５
゜、より好ましくは10゜以上に設置する。6 to 8 are BB, CC and D shown in FIG.
FIG. 3D is a cross-sectional view of the product taken along each line of −D,
The second resin sealing portion 9a (only 9a is shown in the figure) made of an epoxy resin is filled corresponding to the step portions 7a to 7d of the resin sealing portion 7, and the step taper 7e shown in FIG. Undercut reverse taper with respect to the second resin sealing portion 9, preferably 5
It is installed at more than 10 °, more preferably at least 10 °.
この段部は半導体素子２の外側をほぼ囲んで設けられ
ているので、C1の距離を持つ導電性金属板１と板状の放
熱フイン８間に充填する第２の樹脂封止部９の密着性が
改善されて、第１の樹脂封止部７を締付ける効果を発揮
する。This stepped portion is provided at substantially surrounds the outer semiconductor element 2, the second resin sealing portion 9 to be filled between the conductive metal plate 1 and the plate-shaped heat dissipating fins 8 having a length of C 1 The adhesion is improved, and the effect of tightening the first resin sealing portion 7 is exerted.
又第２の樹脂封止部９に露出する第１の樹脂封止部７
は各導電性金属板１にほぼ対向しており、しかも各導電
性金属板１…間換言すると、内外部リード端子が存在す
る位置に対向する部分を多少延長して上面から見るほぼ
十字形に形成され、これを連続すると第４図の上面図が
得られる。In addition, the first resin sealing portion 7 exposed to the second resin sealing portion 9
Are substantially opposed to each conductive metal plate 1, and in other words, each conductive metal plate 1 ... In other words, the part opposed to the position where the inner and outer lead terminals are present is slightly extended to form a substantially cross shape. It is formed and when it is continued, the top view of FIG. 4 is obtained.
尚第４図に示すように第１の樹脂封止部７が露出する
面積は第１の樹脂封止部７の投影面積の約50％が好まし
く、密着力を強めるために少くするとC1距離を所望の寸
法に収めることができずボイドが抜けず絶縁不良をもた
らす。これは第２の樹脂封止部９成形時にC1距離を持っ
た隙間が後から充填されてここでの樹脂圧が小さくなる
上に、ボイドを差込み易いためである。As shown in FIG. 4, the exposed area of the first resin encapsulation portion 7 is preferably about 50% of the projected area of the first resin encapsulation portion 7, and the distance C 1 distance should be reduced in order to increase the adhesion. Cannot be accommodated in a desired dimension and voids are not removed, resulting in insulation failure. This is because when the second resin sealing portion 9 is molded, a gap having a C 1 distance is filled later, the resin pressure here becomes small, and voids are easily inserted.
第９図は以上の工程を終えた樹脂封止型半導体装置の
他の部分を示す断面図である。FIG. 9 is a cross-sectional view showing another portion of the resin-encapsulated semiconductor device which has undergone the above steps.
＜発明の効果＞ 二重モールド方式を採用した樹脂封止型半導体装置で
は、板状放熱フイン８と第１の樹脂封止部７間に第２の
樹脂封止部９が充填され易くてエアボイドが派生し難
い。従って、半導体装置の耐絶縁性が安定して高耐圧素
子が得られる効果があり、しかもリード端子の自由度み
従来より増大する。<Advantages of the Invention> In the resin-encapsulated semiconductor device employing the double molding method, the second resin encapsulation portion 9 is easily filled between the plate-shaped heat radiation fin 8 and the first resin encapsulation portion 7, and the air void is generated. Is difficult to derive. Therefore, the insulation resistance of the semiconductor device is stable and a high breakdown voltage element can be obtained, and the degree of freedom of the lead terminal is increased as compared with the conventional one.
又厚さ2mmの板状放熱フイン８を使用して外形寸法が7
7（幅）×27（高）×７（厚）mmの第４図に示す樹脂封
止型半導体装置を試料としてC1を0.34mmとすると、ピー
ク値としてAC7Kvを１分でクイラでき、0.3mmではAC4.9K
vを１分でクリアした。Also, using a plate-shaped heat radiation fin 8 with a thickness of 2 mm,
If the resin-encapsulated semiconductor device of 7 (width) x 27 (height) x 7 (thickness) mm shown in Fig. 4 is used as a sample and C 1 is 0.34 mm, AC7Kv can be quilled in 1 minute as a peak value. AC 4.9K for mm
Cleared v in 1 minute.
又、厚さが2mmの板状の放熱フイン８を利用し、外形
寸法が77（幅）×27（高）×７（厚）mmの樹脂封止型半
導体装置を第２図に示すリードフレームを利用して前記
の方法で製造し、各半導体素子２…それぞれにおける熱
抵抗Rthの分布を測定し、機械的衝撃として75cmの鉄板
上に５回落下させる試験、ならびにアルミ製放熱板に8K
g・cm、12Kg・cm、30Kg・cmで締付トルク試験を実施し
てから熱抵抗分布を求めた。In addition, a resin-sealed semiconductor device having an outer dimension of 77 (width) × 27 (height) × 7 (thickness) mm, which uses a plate-shaped heat radiation fin 8 having a thickness of 2 mm, is shown in FIG. Manufactured by the above method using each of the above, measured the distribution of the thermal resistance Rth in each semiconductor element 2 ... and dropped it 5 times on a 75 cm iron plate as a mechanical shock, and 8K on the aluminum heat sink.
The tightening torque test was performed at g · cm, 12 Kg · cm, and 30 Kg · cm, and then the thermal resistance distribution was obtained.
その結果は第10図に示す通りであるが、試験後の熱抵
抗値は初期値と殆ど変らず、機械的衝撃及び締付けに対
して極めて安定した値を示している。又同じ試料により
絶縁耐圧と、C1距離を持つ隙間の関係を調査したとこ
ろ、絶縁耐圧はAC4.9Kv×１分印加（ACピーク値）をク
リアし、隙間寸法を断面観察により確認したところ、狙
い値に対して0.3±0.04と極めて安定した値を示した。
尚縦軸にRth（ｊ−ｃ）値単位℃/Wを、横軸に半導体素
子の位置を採り、初期値と試験値を区別して示した。The results are as shown in FIG. 10, but the thermal resistance value after the test was almost the same as the initial value, showing a very stable value against mechanical shock and tightening. When the relationship between the withstand voltage and the gap with C 1 distance was investigated using the same sample, the withstand voltage cleared AC 4.9 Kv × 1 minute application (AC peak value) and the gap dimension was confirmed by cross-section observation. It showed an extremely stable value of 0.3 ± 0.04 with respect to the target value.
The vertical axis represents the Rth (jc) value unit ° C / W and the horizontal axis represents the position of the semiconductor element, and the initial value and the test value are shown separately.
第１図は本発明に係る樹脂封止型半導体装置の要部を示
す断面図、第２図はリードフレームの平面図、第３図イ
は第１の樹脂封止工程後の状態を示す上面図、第３図ロ
は第３図イをＡ−Ａ線に沿って切断した断面図、第４図
は本発明に係る樹脂封止型半導体装置の上面図、第５図
は本発明に係る樹脂封止型半導体装置の回路図、第６図
〜第８図は第４図をＢ−Ｂ線、Ｃ−Ｃ線、Ｄ−Ｄ線に沿
って切断した断面図、第９図は本発明に係る樹脂封止型
半導体装置の他の要部を示す断面図、第10図は本発明に
係る樹脂封止型半導体装置の特性を明らかにする図、第
11図は従来の樹脂封止型半導体装置の断面図である。FIG. 1 is a sectional view showing a main part of a resin-sealed semiconductor device according to the present invention, FIG. 2 is a plan view of a lead frame, and FIG. 3A is a top view showing a state after a first resin-sealing step. 3A and 3B are sectional views of FIG. 3B taken along the line AA, FIG. 4 is a top view of a resin-sealed semiconductor device according to the present invention, and FIG. 5 is related to the present invention. Circuit diagrams of the resin-encapsulated semiconductor device, FIGS. 6 to 8 are cross-sectional views of FIG. 4 taken along line BB, CC, and DD, and FIG. 9 is the present invention. FIG. 10 is a cross-sectional view showing another main part of the resin-encapsulated semiconductor device according to the present invention, FIG. 10 is a diagram showing characteristics of the resin-encapsulated semiconductor device according to the present invention,
FIG. 11 is a sectional view of a conventional resin-sealed semiconductor device.
Claims (2)
子と，この周囲に配置する遊端を持つリード端子と，こ
のリード端子と前記半導体素子間を架橋する金属細線
と，この金属細線及び前記半導体素子を埋設し前記導電
性金属板の裏面を露出して封止成形する第１の樹脂封止
部と，前記導電性金属板の裏面と僅かの距離を維持して
対向配置する板状の放熱フインと，この僅かな距離を埋
め前記板状の放熱フインの裏面を露出し前記第１の樹脂
封止部を含めて封止成形する第２の樹脂封止部をもつ樹
脂封止型半導体装置において，前記板状の放熱フインと
導電性金属板裏面間の距離を最小とし，前記放熱フイン
と第１の樹脂封止部間の距離、前記金属細線を接続する
前記リード端子に対応する第１の樹脂封止部と前記放熱
フイン間の距離を順次増大することを特徴とする樹脂封
止型半導体装置1. A semiconductor element mounted on the surface of a conductive metal plate, a lead terminal having a free end disposed around the semiconductor element, a thin metal wire bridging the lead terminal and the semiconductor element, the thin metal wire and the metal wire. A first resin encapsulation portion in which a semiconductor element is embedded and the back surface of the conductive metal plate is exposed and sealing-molded, and a plate-like member which is arranged to face the back surface of the conductive metal plate while maintaining a slight distance therebetween. A resin-sealed semiconductor having a heat-radiating fin and a second resin-sealing portion that fills the slight distance and exposes the back surface of the plate-shaped heat-radiating fin to perform sealing molding including the first resin-sealing portion. In the device, the distance between the plate-shaped heat dissipation fin and the back surface of the conductive metal plate is minimized, the distance between the heat dissipation fin and the first resin sealing portion, and the lead terminal for connecting the thin metal wire to the first terminal. Set the distance between the resin sealing part of 1 and the heat dissipation fin in order. Resin-sealed semiconductor device characterized by increased
子と，この周囲に配置する遊端を持つリード端子と，こ
のリード端子と前記半導体素子間を架橋する金属細線
と，この金属細線及び前記半導体素子を埋設し前記導電
性金属板の裏面を露出して封止成形する第１の樹脂封止
部と，前記導電性金属板の裏面と僅かの距離を維持して
対向配置する板状の放熱フインと，この僅かな距離を埋
め前記板状の放熱フインの裏面を露出し前記第１の樹脂
封止部を含めて封止成形する第２の樹脂封止部をもつ樹
脂封止型半導体装置において，前記板状の放熱フインと
導電性金属板裏面間の距離を最小とし、前記放熱フイン
と第１の樹脂封止部間の距離，前記金属細線を接続する
前記リード端子に対応する第１の樹脂封止部と前記放熱
フイン間の距離を順次増大すると共に，前記放熱フイン
と反対側に位置し前記第１の樹脂封止部表面部分をほぼ
十字形に露出し，その周りに形成する段部にも前記第２
の樹脂封止部部分を充填することを特徴とする特許請求
の範囲第１項記載の樹脂封止型半導体装置2. A semiconductor element mounted on the surface of a conductive metal plate, a lead terminal having a free end disposed around the semiconductor element, a thin metal wire bridging between the lead terminal and the semiconductor element, the thin metal wire and the metal wire. A first resin encapsulation portion in which a semiconductor element is embedded and the back surface of the conductive metal plate is exposed and sealing-molded, and a plate-like member which is arranged to face the back surface of the conductive metal plate while maintaining a slight distance therebetween. A resin-sealed semiconductor having a heat-radiating fin and a second resin-sealing portion that fills the slight distance and exposes the back surface of the plate-shaped heat-radiating fin to perform sealing molding including the first resin-sealing portion. In the device, the distance between the plate-shaped heat dissipation fin and the back surface of the conductive metal plate is minimized, the distance between the heat dissipation fin and the first resin sealing portion, and the lead terminal for connecting the metal thin wire are Set the distance between the resin sealing part of 1 and the heat dissipation fin in order. Increases while the heat radiation fins and located on the opposite side to expose the first resin sealing portion surface portion substantially cruciform, said second even stepped portion formed around the
The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated portion is filled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6571587A JP2509607B2 (en) | 1987-03-23 | 1987-03-23 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6571587A JP2509607B2 (en) | 1987-03-23 | 1987-03-23 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63233555A JPS63233555A (en) | 1988-09-29 |
| JP2509607B2 true JP2509607B2 (en) | 1996-06-26 |
Family
ID=13294993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6571587A Expired - Lifetime JP2509607B2 (en) | 1987-03-23 | 1987-03-23 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2509607B2 (en) |
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-
1987
- 1987-03-23 JP JP6571587A patent/JP2509607B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63233555A (en) | 1988-09-29 |
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