JPS60241214A - アモルフアスシリコン膜の生成法 - Google Patents
アモルフアスシリコン膜の生成法Info
- Publication number
- JPS60241214A JPS60241214A JP59096652A JP9665284A JPS60241214A JP S60241214 A JPS60241214 A JP S60241214A JP 59096652 A JP59096652 A JP 59096652A JP 9665284 A JP9665284 A JP 9665284A JP S60241214 A JPS60241214 A JP S60241214A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- film
- gas
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59096652A JPS60241214A (ja) | 1984-05-16 | 1984-05-16 | アモルフアスシリコン膜の生成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59096652A JPS60241214A (ja) | 1984-05-16 | 1984-05-16 | アモルフアスシリコン膜の生成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60241214A true JPS60241214A (ja) | 1985-11-30 |
| JPH0210567B2 JPH0210567B2 (enExample) | 1990-03-08 |
Family
ID=14170759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59096652A Granted JPS60241214A (ja) | 1984-05-16 | 1984-05-16 | アモルフアスシリコン膜の生成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60241214A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093798A1 (ja) * | 2004-03-26 | 2005-10-06 | Nissin Electric Co., Ltd. | シリコンドット形成方法及びシリコンドット形成装置 |
| JP2007080999A (ja) * | 2005-09-13 | 2007-03-29 | Nissin Electric Co Ltd | シリコンドットの形成方法及び装置 |
| JP2007088311A (ja) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | シリコンドット形成方法及びシリコンドット形成装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0610969U (ja) * | 1992-07-17 | 1994-02-10 | 益弘 光山 | 表示装置 |
| JPH0615081U (ja) * | 1992-07-21 | 1994-02-25 | 益弘 光山 | 表示装置 |
| JPH0654075U (ja) * | 1992-12-18 | 1994-07-22 | 益弘 光山 | 展示装置 |
-
1984
- 1984-05-16 JP JP59096652A patent/JPS60241214A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093798A1 (ja) * | 2004-03-26 | 2005-10-06 | Nissin Electric Co., Ltd. | シリコンドット形成方法及びシリコンドット形成装置 |
| US7988835B2 (en) | 2004-03-26 | 2011-08-02 | Nissin Electric Co., Ltd. | Silicon dot forming method and silicon dot forming apparatus |
| JP2007080999A (ja) * | 2005-09-13 | 2007-03-29 | Nissin Electric Co Ltd | シリコンドットの形成方法及び装置 |
| JP2007088311A (ja) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | シリコンドット形成方法及びシリコンドット形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0210567B2 (enExample) | 1990-03-08 |
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