JPH0210567B2 - - Google Patents

Info

Publication number
JPH0210567B2
JPH0210567B2 JP59096652A JP9665284A JPH0210567B2 JP H0210567 B2 JPH0210567 B2 JP H0210567B2 JP 59096652 A JP59096652 A JP 59096652A JP 9665284 A JP9665284 A JP 9665284A JP H0210567 B2 JPH0210567 B2 JP H0210567B2
Authority
JP
Japan
Prior art keywords
silicon
gas
film
solid
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59096652A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60241214A (ja
Inventor
Ko Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP59096652A priority Critical patent/JPS60241214A/ja
Publication of JPS60241214A publication Critical patent/JPS60241214A/ja
Publication of JPH0210567B2 publication Critical patent/JPH0210567B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59096652A 1984-05-16 1984-05-16 アモルフアスシリコン膜の生成法 Granted JPS60241214A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59096652A JPS60241214A (ja) 1984-05-16 1984-05-16 アモルフアスシリコン膜の生成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59096652A JPS60241214A (ja) 1984-05-16 1984-05-16 アモルフアスシリコン膜の生成法

Publications (2)

Publication Number Publication Date
JPS60241214A JPS60241214A (ja) 1985-11-30
JPH0210567B2 true JPH0210567B2 (enExample) 1990-03-08

Family

ID=14170759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59096652A Granted JPS60241214A (ja) 1984-05-16 1984-05-16 アモルフアスシリコン膜の生成法

Country Status (1)

Country Link
JP (1) JPS60241214A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610969U (ja) * 1992-07-17 1994-02-10 益弘 光山 表示装置
JPH0615081U (ja) * 1992-07-21 1994-02-25 益弘 光山 表示装置
JPH0654075U (ja) * 1992-12-18 1994-07-22 益弘 光山 展示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100814454B1 (ko) 2004-03-26 2008-03-17 닛신덴키 가부시키 가이샤 실리콘 도트 형성방법 및 실리콘 도트 형성장치
JP4497066B2 (ja) * 2005-09-13 2010-07-07 日新電機株式会社 シリコンドットの形成方法及び装置
JP4497068B2 (ja) * 2005-09-26 2010-07-07 日新電機株式会社 シリコンドット形成方法及びシリコンドット形成装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610969U (ja) * 1992-07-17 1994-02-10 益弘 光山 表示装置
JPH0615081U (ja) * 1992-07-21 1994-02-25 益弘 光山 表示装置
JPH0654075U (ja) * 1992-12-18 1994-07-22 益弘 光山 展示装置

Also Published As

Publication number Publication date
JPS60241214A (ja) 1985-11-30

Similar Documents

Publication Publication Date Title
US9455147B2 (en) Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US5510098A (en) CVD method of producing and doping fullerenes
Duley Molecular clusters in interstellar clouds
JPS6240428B2 (enExample)
JPH0210567B2 (enExample)
Sugai et al. Lithium wall conditioning for fuel and impurity control
JP2004018370A (ja) シリコンの製造装置および方法
JPH04958B2 (enExample)
EP0029747A1 (en) An apparatus for vacuum deposition and a method for forming a thin film by the use thereof
JPH11500097A (ja) Ｃ▲下７０▼からのダイヤモンドの成長法
KR20210143776A (ko) 규소 나노입자 상의 흑연질 쉘의 합성
JPH06144993A (ja) 硼素ドープダイヤモンド
US20040157005A1 (en) Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions
Ohmi et al. Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature
US5510007A (en) Electrochemical generation of silane
JPS6150372B2 (enExample)
US4412935A (en) Storage material for hydrogen utilizing amorphous silicon and a method for producing the same
JPS6395200A (ja) 硬質窒化ホウ素膜の製造方法
JPH0481552B2 (enExample)
US12312679B2 (en) Method for producing N-doped carbon nanomesh
JPS63270393A (ja) ダイヤモンドの合成方法
Seong et al. Parametric Analysis of Substrate Heating in Low-Pressure Inductively Coupled Plasma
JPH0346438B2 (enExample)
JPS63117995A (ja) ダイヤモンドの気相合成法
JP3180842B2 (ja) ダイヤモンド膜の製造方法