JPS6022323A - 絶縁層ドライエツチの終点検出方法 - Google Patents

絶縁層ドライエツチの終点検出方法

Info

Publication number
JPS6022323A
JPS6022323A JP13166783A JP13166783A JPS6022323A JP S6022323 A JPS6022323 A JP S6022323A JP 13166783 A JP13166783 A JP 13166783A JP 13166783 A JP13166783 A JP 13166783A JP S6022323 A JPS6022323 A JP S6022323A
Authority
JP
Japan
Prior art keywords
layer
dry etching
passivation
etching
polysilicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13166783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464176B2 (enExample
Inventor
Kazuo Fujishiro
藤城　一穂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP13166783A priority Critical patent/JPS6022323A/ja
Publication of JPS6022323A publication Critical patent/JPS6022323A/ja
Publication of JPH0464176B2 publication Critical patent/JPH0464176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP13166783A 1983-07-18 1983-07-18 絶縁層ドライエツチの終点検出方法 Granted JPS6022323A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13166783A JPS6022323A (ja) 1983-07-18 1983-07-18 絶縁層ドライエツチの終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13166783A JPS6022323A (ja) 1983-07-18 1983-07-18 絶縁層ドライエツチの終点検出方法

Publications (2)

Publication Number Publication Date
JPS6022323A true JPS6022323A (ja) 1985-02-04
JPH0464176B2 JPH0464176B2 (enExample) 1992-10-14

Family

ID=15063409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13166783A Granted JPS6022323A (ja) 1983-07-18 1983-07-18 絶縁層ドライエツチの終点検出方法

Country Status (1)

Country Link
JP (1) JPS6022323A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005001662A (ja) * 2003-06-11 2005-01-06 Campagnolo Spa 自転車構成部品およびその製造方法
US8707823B2 (en) 2003-06-10 2014-04-29 Campagnolo S.R.L. Bicycle component and method for making such a component
US8863616B2 (en) 2006-02-14 2014-10-21 Campagnolo S.R.L. Bicycle pedal crank, intermediate product and method for manufacturing such a pedal crank

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587437A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Method of detecting completion of dry etching
JPS5713745A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Detecting method for ion etching finishing point
JPS57118644A (en) * 1981-01-16 1982-07-23 Seiko Epson Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587437A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Method of detecting completion of dry etching
JPS5713745A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Detecting method for ion etching finishing point
JPS57118644A (en) * 1981-01-16 1982-07-23 Seiko Epson Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8707823B2 (en) 2003-06-10 2014-04-29 Campagnolo S.R.L. Bicycle component and method for making such a component
JP2005001662A (ja) * 2003-06-11 2005-01-06 Campagnolo Spa 自転車構成部品およびその製造方法
US8024993B2 (en) 2003-06-11 2011-09-27 Campagnolo, S.R.L. Bicycle component and method for manufacturing such a component
US10105916B2 (en) 2003-06-11 2018-10-23 Campagnolo S.R.L. Bicycle component and method for manufacturing such a component
US8863616B2 (en) 2006-02-14 2014-10-21 Campagnolo S.R.L. Bicycle pedal crank, intermediate product and method for manufacturing such a pedal crank

Also Published As

Publication number Publication date
JPH0464176B2 (enExample) 1992-10-14

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