JPS60217688A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS60217688A
JPS60217688A JP7285184A JP7285184A JPS60217688A JP S60217688 A JPS60217688 A JP S60217688A JP 7285184 A JP7285184 A JP 7285184A JP 7285184 A JP7285184 A JP 7285184A JP S60217688 A JPS60217688 A JP S60217688A
Authority
JP
Japan
Prior art keywords
layer
buried
semiconductor laser
impurity concentration
blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7285184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568872B2 (fr
Inventor
Makoto Haneda
誠 羽田
Masaaki Tsuchiya
土屋　正明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Hitachi Iruma Electronic Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Tohbu Semiconductor Ltd
Hitachi Iruma Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Tohbu Semiconductor Ltd, Hitachi Iruma Electronic Co Ltd filed Critical Hitachi Ltd
Priority to JP7285184A priority Critical patent/JPS60217688A/ja
Publication of JPS60217688A publication Critical patent/JPS60217688A/ja
Publication of JPH0568872B2 publication Critical patent/JPH0568872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP7285184A 1984-04-13 1984-04-13 半導体レ−ザ素子 Granted JPS60217688A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7285184A JPS60217688A (ja) 1984-04-13 1984-04-13 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7285184A JPS60217688A (ja) 1984-04-13 1984-04-13 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS60217688A true JPS60217688A (ja) 1985-10-31
JPH0568872B2 JPH0568872B2 (fr) 1993-09-29

Family

ID=13501288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7285184A Granted JPS60217688A (ja) 1984-04-13 1984-04-13 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS60217688A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416477A2 (fr) * 1989-09-04 1991-03-13 Alcatel SEL Aktiengesellschaft Laser à semi-conducteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416477A2 (fr) * 1989-09-04 1991-03-13 Alcatel SEL Aktiengesellschaft Laser à semi-conducteur
US5148439A (en) * 1989-09-04 1992-09-15 Alcatel N.V. Semiconductor laser

Also Published As

Publication number Publication date
JPH0568872B2 (fr) 1993-09-29

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