JPS60215759A - Thin film forming device - Google Patents

Abstract

PURPOSE:To enable measurement of ion current even if a substrate is a non-conductor and even if vapor arrives at only the substrate inside by bringing a sheathed thermocouple into contact with the vapor deposition surface of the substrate, measuring the temp. of the substrate, measuring the current flowing in the sheath of the thermocouple and determining the ionization rate of the vapor. CONSTITUTION:A thin film forming device melts a material 2a to be deposited by evaporation in a vacuum vessel 1 at a high temp. in a crucible 2, ejects the vapor 2b of the molten material 2a through the small hole 17 provided to the crucible, bringing electrons 18 into collision against the vapor 2b thereof to ionize the vapor 2b and accelerates the ions by the electric field of an accelerating power source 16 applied to an accelerating electrode 6 thereby depositing the ions by evaporation on the substrate 8. A sheathed thermocouple 10 is brought into contact with the vapor deposition surface of the substrate 8 and the temp. of the substrate 8 is measured. The ion current flowing in the sheath 19b of the thermocouple 10 is then measured and the ionization rate of the vapor 2b is determined.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] Jin's invention relates to a thin film forming apparatus that forms a thin film by colliding a vaporized deposition material with a substrate.

[Conventional technology] Conventionally, there was a device of this type shown in the first leap.

In the figure, (1) is a vacuum vessel (2), a crucible (2a) is a deposited substance (2b) is a vapor (3) is a filament (4) is a grid (5) is a filament (6) is an acceleration W! pole (7
) is the shield (8) is the substrate (9) is the thermocouple Q (I is the substrate holder (111 is the ammeter, @ is the heating power source (to) is the filament heating power source (141 is the ionization power source (to) is the ionization filament source) 08 is an accelerating power source (Lη is a small hole (to) an electron, and 00 is an electron.

Next, the operation will be explained. Make the inside of the vacuum container (1) a high vacuum, put the vapor deposited substance (2a) into the crucible (2), heat the filament (3) red-hot with the power source (2), and heat the filament (3) with the heating power source (b). 2) Electronics (goods)
collide and heat. The vapor deposition substance (2a) is dissolved in vapor (
The pressure inside the crucible (2) where 2b) is generated increases and steam (
2b) is ejected from the small hole Q'h. On the way to the substrate (8), the vapor (2b) collides with electrons from the filament (5) heated by the power source α to the grid (4) by the power source a4. It collides with the vapor (2b) and is ionized.

The ionized vapor (2b) is accelerated by the electric field of the acceleration power source (to) applied to the acceleration electrode (6), collides with the substrate (8), and forms a film. When the vapor (2b) is deposited on the substrate (8) and the substrate holder αQ, the ion current passes from the substrate holder αO to the ammeter (11), so the ionization rate, which affects the film quality, can be measured based on the reading of the ammeter 011.

Moreover, the temperature of the substrate (8) can be measured by a thermocouple (9).

However, in the conventional apparatus, the ion current could not be measured unless the substrate or plate (8) was a conductor or the vapor (2b) did not reach the substrate holder ant. Moreover, the ion current conductor and thermocouple (9) had to be insulated and taken out to the outside.

The present invention provides a thin film forming apparatus in which an ionic current can be measured even if the substrate is a non-conductor and even if vapor reaches only the inside of the substrate, and the lead wire taken out to the outside has less convergence.

2 and 8 show an apparatus according to the invention, in which Ole
+, T sheath thermocouple (19a), sheath (19b), and thermocouple (19c) are insulators. Others are the same as before.

In FIGS. 2 and 8, the vapor deposition substance (2a) becomes vapor (2b) and is vapor deposited on the substrate (8) as in the conventional method.

The deposited vapor (2b) is also deposited on the sheath thermocouple (11), and the ionic current passes through the sheath (19a).The heat of the substrate (8) passes through the sheath (19a) and is measured by the thermocouple (19b).

The sheath (19a) and thermocouple (19b) are insulated and can be measured at the same time.
Since a) is sealed, one sheathed thermocouple is placed in a vacuum chamber (
1) Just seal and insulate it outside and take it out.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing a conventional thin film forming apparatus, FIG. 2 is a block diagram showing an embodiment of the present invention, and FIG. 8 is a block diagram showing the main parts of FIG. In the figure, (1) is a vacuum container,
(2) Crucible, (6) accelerating electrode, (8) substrate, (
9) is a thermocouple, (b) is an ammeter, and a is a sheathed thermocouple. Note that the same reference numerals in each figure indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] The substance to be deposited is melted at high humidity in a crucible in a high vacuum area, the vapor of the molten substance is ejected from a small hole in the crucible, the vapor is bombarded with electrons, and the vapor is ionized and accelerated by an electric field. In the case of vapor deposition on a substrate, a sheathed thermocouple is placed on the vapor deposition surface of the substrate to measure the humidity of the substrate, and the ionization rate of the vapor is determined by measuring the ion current flowing through the sheath of the thermocouple. A thin film forming device configured to allow