JPH0219187B2 - - Google Patents
Info
- Publication number
- JPH0219187B2 JPH0219187B2 JP7119684A JP7119684A JPH0219187B2 JP H0219187 B2 JPH0219187 B2 JP H0219187B2 JP 7119684 A JP7119684 A JP 7119684A JP 7119684 A JP7119684 A JP 7119684A JP H0219187 B2 JPH0219187 B2 JP H0219187B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor
- thermocouple
- crucible
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は蒸気化した蒸着物質を基板に衝突さ
せて薄膜を形成する薄膜形成装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thin film forming apparatus that forms a thin film by colliding vaporized deposition material with a substrate.
従来この種の装置として第１図に示すものがあ
つた。
A conventional device of this type is shown in FIG.
図において１は真空容器２はるつぼ２ａは蒸着
物質２ｂは蒸気３はフイラメント４はグリツド５
はフイラメント６は加速電極７はシールド８は基
板９は熱電対１０は基板ホルダー１１は電流計、
１２は加熱電源１３はフイラメント加熱電源１４
はイオン化電源１５はイオン化フイラメント電源
１６は加速電源１７は小孔１８は電子、１９は電
子である。 In the figure, 1 is a vacuum vessel 2, a crucible 2a is a vapor deposition material 2b, a vapor 3 is a filament 4, and a grid 5.
The filament 6 is the accelerating electrode 7 is the shield 8 is the substrate 9 is the thermocouple 10 is the substrate holder 11 is the ammeter,
12 is a heating power source 13 is a filament heating power source 14
The ionizing power source 15 is the ionizing filament power source 16, the accelerating power source 17, the small hole 18 is an electron, and the hole 19 is an electron.
次に動作について説明する。真空容器１内を高
真空にし蒸着物質２ａをるつぼ２に入れ、フイラ
メント３を電源１３で赤熱し加熱電源１２により
フイラメント３からるつぼ２に電子１８を衝突さ
せて加熱する。蒸着物質２ａは溶け蒸気２ｂが発
生しるつぼ２内の圧力が高くなり蒸気２ｂは小孔
１７より噴出する。蒸気２ｂは基板８に向う途中
で、電源１３で赤熱したフイラメント５からグリ
ツド４に電源１４によつて電子が衝突するがグリ
ツド４を通過した電子１９が蒸気２ｂに衝突して
イオン化する。イオン化した蒸気２ｂは加速電極
６にかけられた加速電源１６の電界によつて加速
され基板８に衝突し膜を形成する。蒸気２ｂが基
板８および基板ホルダー１０に蒸着する時、イオ
ン電流は基板ホルダー１０から電流計１１を通る
ので電流計１１の指示値により膜質を左右するイ
オン化率が測定できる。また基板８の温度は熱電
対９によつて測定できる。 Next, the operation will be explained. The interior of the vacuum container 1 is brought to a high vacuum, the vapor deposition substance 2a is placed in the crucible 2, the filament 3 is heated to red by a power source 13, and the heating power source 12 causes electrons 18 to collide with the crucible 2 from the filament 3 to heat it. The vapor deposition substance 2a melts and the pressure inside the crucible 2 where steam 2b is generated increases and the steam 2b is ejected from the small hole 17. On the way to the substrate 8, the vapor 2b collides with electrons from the filament 5 heated by the power source 13 to the grid 4 by the power source 14, and the electrons 19 that have passed through the grid 4 collide with the vapor 2b and are ionized. The ionized vapor 2b is accelerated by the electric field of the acceleration power source 16 applied to the acceleration electrode 6, collides with the substrate 8, and forms a film. When the vapor 2b is deposited on the substrate 8 and the substrate holder 10, the ion current passes from the substrate holder 10 to the ammeter 11, so that the ionization rate, which affects the film quality, can be measured based on the value indicated by the ammeter 11. Further, the temperature of the substrate 8 can be measured by a thermocouple 9.
しかし従来の装置では基板８が導電体であるか
あるいは基板ホルダー１０まで蒸気２ｂが届かな
ければイオン電流は測定できなかつた。また、イ
オン電流導線と熱電対９は絶縁して外部に出さな
ければならなかつた。 However, in the conventional apparatus, the ion current could not be measured unless the substrate 8 was a conductor or the vapor 2b did not reach the substrate holder 10. Further, the ion current conductor and the thermocouple 9 had to be insulated and taken out to the outside.
この発明は基板が非導電体であつても、基板内
だけに蒸気が届いてもイオン電流が測定でき、外
部へ取出す導線も数を少なくした薄膜形成装置を
提供する。 The present invention provides a thin film forming apparatus in which an ionic current can be measured even if the substrate is a non-conductor and even if vapor reaches only the inside of the substrate, and the number of conductive wires taken out to the outside is reduced.
第２図及び第３図は本発明による装置であり、
１９はシース熱電対１９ａはシース１９ｂは熱電
対１９ｃは絶縁物である。その他は従来と同じで
ある。 2 and 3 show an apparatus according to the invention,
19 is a sheath thermocouple 19a, a sheath 19b is a sheath thermocouple 19c, and a sheath thermocouple 19c is an insulator. Others are the same as before.
第２図及び第３図において蒸着物質２ａは従来
と同じように蒸気２ｂにより基板８に蒸着する。
蒸着した蒸気２ｂはシース熱電対１９にも蒸着し
イオン電流はシース１９ａを通る。基板８の熱は
シース１９ａを通り熱電対１９ｂで測定される。
シース１９ａと熱電対１９ｂは絶縁されており両
者を一度に測定することが可能であり、シース１
９ａは密封されているためシース熱電対１本を真
空槽１の外に密封絶縁して取り出すだけでよい。 In FIGS. 2 and 3, the deposition material 2a is deposited on the substrate 8 by vapor 2b in the same manner as in the conventional method.
The deposited vapor 2b is also deposited on the sheath thermocouple 19, and the ionic current passes through the sheath 19a. The heat of the substrate 8 passes through the sheath 19a and is measured by a thermocouple 19b.
The sheath 19a and thermocouple 19b are insulated and can be measured at the same time.
Since 9a is sealed, it is only necessary to take one sheathed thermocouple out of the vacuum chamber 1 in a hermetically insulated manner.
第１図は従来の薄膜形成装置を示す構成図、第
２図はこの発明の一実施例を示す構成図、第３図
は第２図の要部を示す構成図である。図におい
て、１は真空容器、２はるつぼ、６は加速電極、
８は基板、９は熱電対、１１は電流計、１９はシ
ース熱電対である。なお各図中同一符号は同一又
は相当部分を示す。
FIG. 1 is a block diagram showing a conventional thin film forming apparatus, FIG. 2 is a block diagram showing an embodiment of the present invention, and FIG. 3 is a block diagram showing the main parts of FIG. In the figure, 1 is a vacuum container, 2 is a crucible, 6 is an accelerating electrode,
8 is a substrate, 9 is a thermocouple, 11 is an ammeter, and 19 is a sheath thermocouple. Note that the same reference numerals in each figure indicate the same or equivalent parts.
Claims (1)
高温で溶融し、るつぼに設けた小孔より溶融した
物質の蒸気を噴出させ、上記蒸気に電子を衝突さ
せて蒸気をイオン化して電界によつて加速させ
て、基板に蒸着させるものにおいて、上記基板の
蒸着面にシース熱電対を接触させて上記基板の温
度を測定し、上記熱電対のシースを流れるイオン
電流を測定するように構成した薄膜形成装置。1. The substance to be deposited is melted at high temperature in a crucible in a high vacuum region, the vapor of the molten substance is ejected from a small hole in the crucible, and the vapor is ionized by colliding with electrons, which is then applied to an electric field. A thin film configured to measure the temperature of the substrate by bringing a sheathed thermocouple into contact with the evaporation surface of the substrate and measure the ionic current flowing through the sheath of the thermocouple. Forming device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7119684A JPS60215759A (en) | 1984-04-09 | 1984-04-09 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7119684A JPS60215759A (en) | 1984-04-09 | 1984-04-09 | Thin film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60215759A JPS60215759A (en) | 1985-10-29 |
| JPH0219187B2 true JPH0219187B2 (en) | 1990-04-27 |
Family
ID=13453670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7119684A Granted JPS60215759A (en) | 1984-04-09 | 1984-04-09 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60215759A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453285U (en) * | 1990-09-11 | 1992-05-07 | ||
| JPH0557008U (en) * | 1991-12-27 | 1993-07-30 | 日本道路興業株式会社 | Road signs with combined marking of Kanji and Romaji |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film |
| US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
-
1984
- 1984-04-09 JP JP7119684A patent/JPS60215759A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453285U (en) * | 1990-09-11 | 1992-05-07 | ||
| JPH0557008U (en) * | 1991-12-27 | 1993-07-30 | 日本道路興業株式会社 | Road signs with combined marking of Kanji and Romaji |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60215759A (en) | 1985-10-29 |
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