JPH083733A - Production of thin film and device therefor - Google Patents

Abstract

PURPOSE:To reduce the cost of production while adopting an ion accelerating structure. CONSTITUTION:Film formation is carried out while impressing voltage for accelerating ions between an evaporating crucible 2 and a vacuum vessel 1 for vapor deposition by heating with electron beams. By this method, ions are accelerated and a thin film is produced on a substrate 5 without insulating a substrate holding mechanism 6 from the vacuum vessel 1. The attachment structure of the substrate holding mechanism 6 can be simplified and the objective thin film having more satisfactory crystallinity is produced as compared with the conventional vacuum deposition method while reducing the cost of production.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus for manufacturing a thin film having good crystallinity in thin film manufacturing by electron beam heating vapor deposition.

[0002]

2. Description of the Related Art Electron beam heating vapor deposition is used for metals, semiconductors,
It is widely used because a wide variety of thin films can be produced regardless of the type of raw material such as an insulator. A conventional thin film manufacturing apparatus of this type will be described with reference to FIG.

FIG. 4 is a block diagram showing an electron beam heating vapor deposition type conventional thin film manufacturing apparatus. In FIG. 4, 1 is a vacuum container, 2 is an evaporation crucible for holding an evaporation source A, and 3 is an electron beam. The generating electron guns 4 are power supplies for the electron guns as high-voltage power supplies that supply the electron beams 3 and accelerate the electron beams. The power source 4 for the electron gun is configured to be able to apply a voltage of several kilovolts to ten and several kilovolts.

Reference numeral 5 denotes a substrate as a thin film product to be manufactured, and the substrate 5 is arranged by a substrate holding mechanism 6 at a position facing the evaporation crucible 2 in the vacuum container 1. Reference numeral 7 denotes an exhaust port for reducing the pressure inside the vacuum container 1.

In the conventional thin-film manufacturing apparatus having the above-mentioned structure, the material in the evaporation crucible 2 is heated and evaporated by the impact of the electron beam accelerated by a high voltage, so that the evaporation crucible 2 is located at a position opposite to the evaporation crucible 2. A thin film is formed on the arranged substrate 5.

At this time, it has been known that a part of the evaporated material is ionized, and further, the crystallinity of the deposited film is greatly improved by accelerating these ions and making them enter the substrate during film formation. Therefore, conventionally, a method of accelerating the ions by applying a constant voltage between the substrate 5 and the vacuum container 1 has been adopted.

FIG. 5 shows the configuration of a conventional thin film manufacturing apparatus having a structure for accelerating ions. In FIG. 5, reference numeral 8 is an ion acceleration power source. The ion acceleration power source 8 was electrically connected to the substrate 5 via the substrate holding mechanism 6 that holds the substrate 5. The insulating insulator 9 was interposed between the substrate holding mechanism 6 and the vacuum container 1.

[0008]

However, in order to apply a voltage to the substrate 5, the substrate holding mechanism 6 and the vacuum container 1 need to be electrically insulated in advance. The device becomes complicated when a carrier device or the like is incorporated. This is to configure the substrate holding mechanism 6 with a mechanism for heating, rotating, transferring, etc. of the substrate.
This is because all the members having the same electric potential must be insulated from the vacuum container 1. Therefore, there is a drawback that the manufacturing cost is significantly increased.

Further, when the evaporative substance is a conductive substance, there is a drawback that insulation defects are generated due to the wraparound and adhesion of the substance, which often causes a failure that a voltage cannot be applied to the substrate.

The present invention has been made in order to solve such a problem, and it is possible to keep the manufacturing cost low even if the structure for accelerating the ions is adopted, and to avoid the faulty insulation. With the goal.

[0011]

The thin film manufacturing method according to the present invention forms a film while applying an ion acceleration voltage between the evaporation crucible and the vacuum container.

In the thin film manufacturing apparatus according to the present invention, the evaporation crucible is electrically insulated from the vacuum container, and the evaporation crucible and the vacuum container are connected to a voltage generator for applying an ion acceleration voltage therebetween. It is a thing. A thin film manufacturing apparatus of another invention is the thin film manufacturing apparatus of the above thin film manufacturing apparatus, wherein an insulating material is interposed between the bottom of the evaporation crucible and the vacuum container to insulate the two from each other.

[0013]

According to the present invention, the thin film can be manufactured by accelerating the ions even if the holding mechanism for holding the thin film product is not insulated from the vacuum container. Further, since the evaporated material is less likely to scatter on the bottom side of the evaporation crucible, the evaporated material is less likely to adhere to the insulating material interposed between the evaporation crucible and the vacuum container.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to FIGS. FIG. 1 is a configuration diagram of a thin film manufacturing apparatus used for carrying out the thin film manufacturing method according to the present invention,
2 is an enlarged perspective view showing a main part of the thin film manufacturing apparatus, and FIG.
3 is a graph showing the relationship between the X-ray diffraction intensity and the crucible voltage for the (022) plane of the cobalt-chromium thin film manufactured by the thin film manufacturing method according to the present invention. In these figures, the same or equivalent members as those described in FIGS. 4 and 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

1 to 3, reference numeral 11 denotes an ion acceleration power source, which is connected to the evaporation crucible 2 and the vacuum container 1 and applies a constant voltage between them. Is configured. The voltage will be described later.

In FIG. 2, reference numeral 12 is an electron beam deflecting magnet, which is a component of the electron gun 3. Reference numeral 13 is an electrode for applying a voltage to the evaporation crucible 2. In this embodiment, two electrodes 13 are provided, and the evaporation crucible 2 is connected to the upper end thereof. The lower part of the electrode 13 penetrates the vacuum flange 14 that is the bottom of the vacuum container 1 and is led out of the vacuum container 1 to be connected to the ion acceleration power supply 11.

The outer surface of the electrode 13 and the vacuum flange 14 are provided at the portion where the electrode 13 penetrates the vacuum flange 14.
An insulating insulator 15 is interposed between and. Further, in this embodiment, the electrode 13 also serves as a cooling water introducing pipe for flowing cooling water to the evaporation crucible 2.

The substrate holding mechanism 6 for holding the substrate 5 in the vacuum container 1 has the same potential as the vacuum container 1.

Next, a thin film manufacturing method according to the present invention will be described using the thin film manufacturing apparatus configured as described above. First, the substrate holding mechanism 6 holds the substrate 5 and the inside of the vacuum container 1 is depressurized to a predetermined pressure while the evaporation raw material A is loaded in the evaporation crucible 2. Then, a high voltage is applied between the evaporation crucible 2 and the electron gun 3 using the electron gun power source 4. At this time, the electron beam emitted by the electron gun 3 is accelerated by this high voltage, and the electron beam deflection magnet 12
Is deflected by the action of the magnetic field generated by the gas and collides with the evaporation raw material arranged in the evaporation crucible 2. As a result, the raw material in the evaporation crucible 2 is heated and evaporated.

On the other hand, apart from this operation, a constant voltage is applied between the vacuum container 1 and the evaporation crucible 2 by using the ion acceleration power source 11. As a result, the ions contained in the evaporated material are accelerated according to the value of the voltage applied between the vacuum container 1 and the evaporation crucible 2 and reach the substrate 5.

Therefore, the ions contained in the evaporated material can be accelerated without applying a voltage to the substrate 5.
That is, the thin film can be produced by accelerating the ions without insulating the substrate holding mechanism 6 from the vacuum container 1.

FIG. 3 shows a cobalt-chromium alloy thin film (Co80 Cr2) manufactured by the thin film manufacturing apparatus of this embodiment.
3 is a graph showing the relationship between the X-ray diffraction intensity for the (002) plane of (0) and the voltage applied to the evaporation crucible 2 (crucible voltage). At this time, the voltage and current applied to the electron gun 3 were kept constant at 4 KV and 200 mA. The substrate 5 was made of quartz glass and held by a stainless steel holder (substrate holding mechanism 6) in electrical connection with the vacuum container 1.

When forming the film, the degree of vacuum is 2 × 10 ⁻⁷ Torr, the deposition rate is 30 nm / min, the substrate temperature is 25 ° C., and the film thickness is 250.
A cobalt-chromium alloy thin film of nm was manufactured. In Figure 3,
It has been shown that the X-ray diffraction intensity remarkably increases by applying an appropriate crucible voltage. Crucible voltage about 1
When set to KV, the X-ray diffraction intensity increased up to about 15 times as compared with the case where no voltage was applied to the crucible. The phenomenon that the crystallinity of the thin film is remarkably improved at a specific crucible voltage (about 1 KV in this embodiment) is also seen in the conventional method of applying a voltage to the substrate,
It is shown that the crystallinity can be most significantly improved under a moderate ion acceleration voltage. This phenomenon is understood as follows.

That is, when the accelerated ions are incident on the surface of the deposited film, (1) removal of impurities adhering to the surface (2) reduction of the atomic arrangement regularity due to the ions sneaking into the thin film crystal is there. Here, the action of (1) is stronger as the ion acceleration voltage is higher, and thus brings about a phenomenon that the crystallinity is improved as the ion acceleration voltage is increased. However, when the ion accelerating voltage becomes too large, the action of (2) becomes stronger, and this time the crystallinity decreases as the ion accelerating voltage increases. Thus, the phenomenon that the crystallinity is most remarkably improved under a specific ion acceleration voltage occurs.

As described above, this embodiment has a remarkable ion accelerating function as in the conventional method of forming a film by applying a voltage to the substrate, and as a result, it is remarkable in improving the crystallinity of the thin film. It has obvious effects.

Further, in the conventional method, the substrate holding mechanism and the vacuum container are mechanically connected via an insulating material in order to apply a voltage to the substrate. However, since a part of the vaporized material goes around and adheres to the surface of the insulating material, when the vaporized material is a conductive substance, the substrate holding member and the vacuum container are brought into an electrically conductive state by several vapor deposition operations. It became impossible to apply voltage to the substrate. On the other hand, when the method of the present invention is adopted, the substrate holding member 6 has the same potential as the vacuum container 1, and the insulating insulator 15 that electrically insulates the vacuum container 1 and the evaporation crucible 2 is an evaporated material. At least 5 due to the structure installed in the position completely opposite to the direction in which
It operated normally without any failure of insulation failure even after repeated vapor deposition operations zero or more times.

[0027]

As described above, the thin film manufacturing method according to the present invention forms a film while applying an ion acceleration voltage between the evaporation crucible and the vacuum container. Since the apparatus electrically isolates the evaporation crucible from the vacuum container and connects the evaporation crucible and the vacuum container with a voltage generator for applying an ion acceleration voltage between them, the thin film product The thin film can be manufactured by accelerating the ions without insulating the holding mechanism for holding the film from the vacuum container.

Therefore, when the substrate holding mechanism is attached to the vacuum container, the attachment portion need only have a simple structure. Therefore, it is possible to produce a thin film having better crystallinity than the conventional vacuum vapor deposition method while keeping the production cost low. it can.

If an insulating material is interposed between the bottom of the evaporation crucible and the vacuum container to insulate the two from each other, it is difficult for the evaporated material to scatter on the bottom side of the evaporation crucible, so the evaporation crucible and the vacuum container. It becomes difficult for the vaporized material to adhere to the insulating material interposed between and. For this reason, it is difficult for an insulation failure to occur due to the wraparound of the evaporated material.

Therefore, according to the present invention, a simple and practical thin film forming means is provided in the application fields such as the production of a magnetic recording thin film tape having excellent characteristics and the formation of a highly durable LSI wiring electrode film. be able to.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a thin film manufacturing apparatus used for carrying out a thin film manufacturing method according to the present invention.

FIG. 2 is an enlarged perspective view showing a main part of a thin film manufacturing apparatus.

FIG. 3 is a graph showing the relationship between the X-ray diffraction intensity and the crucible voltage with respect to the (022) plane of the cobalt-chromium thin film manufactured by the thin film manufacturing method according to the present invention.

FIG. 4 is a block diagram showing an electron beam heating vapor deposition type conventional thin film manufacturing apparatus.

FIG. 5 is a configuration diagram showing a conventional thin film manufacturing apparatus having a structure for accelerating ions.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Evaporating crucible, 3 ... Electron gun, 5 ... Substrate, 6 ... Substrate holding mechanism, 11 ... Ion acceleration power supply, 13
… Electrodes, 14… Vacuum flanges, 15… Insulation insulators, A…
Evaporative raw material.

Claims (3)

[Claims] 1. A method of manufacturing a thin film by electron beam heating vapor deposition, wherein a film is formed while applying an ion acceleration voltage between an evaporation crucible and a vacuum container. 2. A thin film manufacturing apparatus by electron beam heating vapor deposition, wherein an evaporation crucible is electrically insulated from a vacuum container,
A thin-film manufacturing apparatus characterized in that a voltage generator for applying an ion acceleration voltage is connected between the evaporation crucible and the vacuum container. 3. The thin film manufacturing apparatus according to claim 2,
A thin film manufacturing apparatus characterized in that an insulating material is interposed between the bottom of an evaporation crucible and a vacuum container to insulate the two from each other.