JPS60214579A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS60214579A JPS60214579A JP7220084A JP7220084A JPS60214579A JP S60214579 A JPS60214579 A JP S60214579A JP 7220084 A JP7220084 A JP 7220084A JP 7220084 A JP7220084 A JP 7220084A JP S60214579 A JPS60214579 A JP S60214579A
- Authority
- JP
- Japan
- Prior art keywords
- filaments
- filament
- phase
- face
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000010287 polarization Effects 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 3
- 230000001154 acute effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7220084A JPS60214579A (ja) | 1984-04-10 | 1984-04-10 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7220084A JPS60214579A (ja) | 1984-04-10 | 1984-04-10 | 半導体レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60214579A true JPS60214579A (ja) | 1985-10-26 |
JPH0584076B2 JPH0584076B2 (enrdf_load_stackoverflow) | 1993-11-30 |
Family
ID=13482351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7220084A Granted JPS60214579A (ja) | 1984-04-10 | 1984-04-10 | 半導体レ−ザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60214579A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4730327A (en) * | 1985-12-16 | 1988-03-08 | Lytel Incorporated | Dual channel fabry-perot laser |
US5042046A (en) * | 1989-03-06 | 1991-08-20 | Hitachi, Ltd. | Semiconductor laser device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6376053B2 (ja) | 2015-06-22 | 2018-08-22 | 株式会社オートネットワーク技術研究所 | ジョイントコネクタ |
-
1984
- 1984-04-10 JP JP7220084A patent/JPS60214579A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4730327A (en) * | 1985-12-16 | 1988-03-08 | Lytel Incorporated | Dual channel fabry-perot laser |
US5042046A (en) * | 1989-03-06 | 1991-08-20 | Hitachi, Ltd. | Semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
JPH0584076B2 (enrdf_load_stackoverflow) | 1993-11-30 |
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