JPS60211067A - Film forming apparatus - Google Patents
Film forming apparatusInfo
- Publication number
- JPS60211067A JPS60211067A JP6944484A JP6944484A JPS60211067A JP S60211067 A JPS60211067 A JP S60211067A JP 6944484 A JP6944484 A JP 6944484A JP 6944484 A JP6944484 A JP 6944484A JP S60211067 A JPS60211067 A JP S60211067A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- vapor
- base plate
- metal
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発##け金属蒸気を基板に蒸着させる蒸着装置の熱
しゃ閉に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to thermal shutoff of a vapor deposition apparatus for vapor depositing emitted metal vapor onto a substrate.
従来の蒸着装置に使用されているるつぼを第1図に示す
。図において、(1)けるつぼ、(2)け金属、13)
は複数の小孔、(4)は金属蒸気、(61けフィラメン
ト、(6)は電源、(7)は電源、(8)はグリッド、
(9)はフイラメン) 、1101は電源、(IIIは
電源% f12’は加速電極、(+31は基板、a4は
蒸着膜、Q51は電源、Q61はシールド板、0711
/i真空容器である。FIG. 1 shows a crucible used in a conventional vapor deposition apparatus. In the figure, (1) crucible, (2) metal, 13)
is a plurality of small holes, (4) is a metal vapor, (61 filaments, (6) is a power source, (7) is a power source, (8) is a grid,
(9) is a filament), 1101 is a power supply, (III is a power supply%, f12' is an accelerating electrode, (+31 is a substrate, a4 is a deposited film, Q51 is a power supply, Q61 is a shield plate, 0711
/i It is a vacuum container.
次に動作を説明する。第1図において、フイラメンN5
1#:を電源(6)によって加熱され、電源(7)によ
って与えられた電圧により電子の衝突を受けてるつホ(
1)は加熱される。るつぼ(り内の金属(2)は蒸発し
、小孔(3)より真空中に噴射する。噴射された金属蒸
気(4)はフィラメント(9)、電源1101 、グリ
ッド(8)によって電子の衝突を受けてイオン化し、加
速電極鰺と電源Q61rcよって金属蒸気(4)は加速
さね、基板t13に射突し蒸着膜04ヲ作る。この時、
るつぼ+11は高温になり輻射熱が周囲に放出される。Next, the operation will be explained. In Figure 1, filament N5
1#: is heated by the power source (6) and is bombarded by electrons due to the voltage applied by the power source (7).
1) is heated. The metal (2) in the crucible evaporates and is injected into the vacuum through the small hole (3).The injected metal vapor (4) is collided with electrons by the filament (9), the power source 1101, and the grid (8). The metal vapor (4) is accelerated by the accelerating electrode and power source Q61rc, and impinges on the substrate t13 to form a vapor deposited film 04. At this time,
The crucible +11 becomes hot and radiant heat is released to the surroundings.
このため、るつぼ+11の外周には輻射熱を反射させる
熱シールド板1161 t m面と底部に配置しており
、L部は加速電極+121 i熱シールド板と共用する
。しかし、加速電極1121けるつぼ(1)より離れた
位置にあるため金属蒸気(4)が広がって通るための開
口部が大きくとられている。このためるつぼ(1)の噴
射面からの輻射熱は開口部を通り基板0Arc到達して
、加熱することになるので、基板0国を冷す必要がある
。For this reason, heat shield plates 1161 t m that reflect radiant heat are placed on the outer periphery of the crucible +11 and on the bottom, and the L part is shared with the heat shield plate of the accelerating electrode +121 i. However, since the accelerating electrode 1121 is located away from the crucible (1), a large opening is provided for the metal vapor (4) to spread through. Therefore, the radiant heat from the injection surface of the crucible (1) passes through the opening and reaches the substrate 0Arc, heating it, so it is necessary to cool the substrate 0Arc.
本発明は上記のような欠点をなくすため、るつぼill
から噴出する面上の近傍に小孔(3)から噴出する金属
蒸気14】をさまたげない第3図に示すような細長い長
方形の穴をあけた断熱材を上面にけり付は輻射熱が基板
に直接届かないようにして、基板の熱影響を小さくした
ものである。In order to eliminate the above-mentioned drawbacks, the present invention
An insulating material with a long rectangular hole as shown in Figure 3 is cut on the top surface so that the metal vapor 14 ejected from the small hole (3) is not obstructed near the surface where the radiant heat is ejected directly to the substrate. This minimizes the thermal effect on the board by keeping it out of reach.
第2図において、@は断熱材、@け断熱材allVC設
けた細長い長方形の穴である。その他は従来と同じであ
る。In FIG. 2, @ is a heat insulating material, and @ is a long rectangular hole provided with heat insulating material allVC. Others are the same as before.
るつぼfllの小孔13)から噴出する金属蒸気は、小
孔@を通るが、この穴の面積は小さく、るつぼ11+か
らの輻射熱のほとんどが遮へいされる。The metal vapor ejected from the small hole 13) of the crucible flll passes through the small hole @, but the area of this hole is small and most of the radiant heat from the crucible 11+ is shielded.
第4図は他の実施例を示すもので、断熱材骨の開口部は
千鳥斑状に配列されL面に向って拡開した円錐状の複数
個の穴(ハ)で形成されている。これによって、るつぼ
の小孔間の距1w&を大きくできるので、穴明は加工が
容易になる。また、蒸着中の熱応力による割れも少なく
なる。な右、穴@は円錐状でなく、円筒状の穴でもよい
。FIG. 4 shows another embodiment, in which the openings of the heat insulating material ribs are formed by a plurality of conical holes (c) arranged in a staggered pattern and expanding toward the L plane. As a result, the distance 1w& between the small holes of the crucible can be increased, making drilling easier. Furthermore, cracks due to thermal stress during vapor deposition are also reduced. On the right, the hole @ may be a cylindrical hole instead of a conical one.
この発明によると、断熱材でるつぼからの輻射熱のほと
んどが逍ぎらねるので、基板に到達する熱が非常に少な
くなるため、基板への熱の影響を低減できる。According to this invention, since most of the radiant heat from the crucible is absorbed by the heat insulating material, very little heat reaches the substrate, so that the influence of heat on the substrate can be reduced.
第1図は従来の薄膜形成装置を示す構成図、第2図は本
発明の一実施例を示す構成図、第3図は第2図の主要部
を示す斜視図である。
図において、(l)けるつぼ、021は加速電極、(1
3は基板、(ハ)は断熱材、@け穴である。
なお、谷図中同−符号は同−又は相当部分を示す。
代理人 大台増率
第1図
2!
第2図
第3図
手続補正書(方式)
2、発明の名称
薄膜形成装置
3、補正をする者
名 称 (601)三菱電機株式会社
代表者片山仁八部
三菱電機株式会社内
6、補正の対象
(1)明細書の「図面の簡単な説明の欄」補正の内容
(1)明細書第4頁第18行の「斜視図である。」を、
斜視図、第4図はこの発明の他の実施例を示す斜視図で
ある。」と訂正する。
以上FIG. 1 is a block diagram showing a conventional thin film forming apparatus, FIG. 2 is a block diagram showing an embodiment of the present invention, and FIG. 3 is a perspective view showing the main parts of FIG. In the figure, (l) crucible, 021 is an accelerating electrode, (1
3 is the substrate, (c) is the heat insulating material, and @hole. Note that the same reference numerals in the valley diagram indicate the same or equivalent parts. Agent Large increase rate Figure 1 2! Figure 2 Figure 3 Procedural amendment (method) 2. Name of the invention Thin film forming device 3. Name of the person making the amendment (601) Hitoshi Katayama, Representative of Mitsubishi Electric Corporation 8 Department Mitsubishi Electric Corporation 6. Amendment Target (1) Contents of amendment to the “Brief Description of Drawings” section of the specification (1) Change “This is a perspective view” on page 4, line 18 of the specification.
FIG. 4 is a perspective view showing another embodiment of the present invention. ” he corrected. that's all
Claims (1)
るつぼ内の溶融金属の蒸気を複数個の小孔から真空中に
噴射してイオン化し、イオン化された金属蒸気をさらに
加速して基板に衝突させて上記基板に薄膜を形成させる
ものにおいて、開口部をもった断熱材で上記るつぼの上
面を被い、上記小孔上ヒか断熱材の開口部に連通ずるよ
うに配列したことを特徴とする薄膜形成装置。 (2) 断熱材の開口部は長方形でるつぼの小孔が複数
個配列さねていることを特徴とする特許請求の範囲第1
項記載の薄膜形成装置。 131 断熱材の開口部は千鳥足状に配置されているこ
とを特徴とする特許請求の範囲第1.!J記載の薄膜形
成装置。[Claims] 11+ Melting metal in a crucible at high temperature in a vacuum, injecting the vapor of the molten metal in the crucible into the vacuum through a plurality of small holes to ionize the ionized metal vapor. Further, in the case where a thin film is formed on the substrate by colliding with the substrate with further acceleration, the upper surface of the crucible is covered with a heat insulating material having an opening, and the upper surface of the small hole is communicated with the opening of the heat insulating material. A thin film forming apparatus characterized in that the thin film forming apparatus is arranged in the following manner. (2) Claim 1, characterized in that the opening of the heat insulating material is rectangular and has a plurality of crucible small holes arranged in a spiral manner.
Thin film forming apparatus as described in . 131. Claim 1, characterized in that the openings of the heat insulating material are arranged in a staggered manner. ! The thin film forming apparatus described in J.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6944484A JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6944484A JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60211067A true JPS60211067A (en) | 1985-10-23 |
JPH0225424B2 JPH0225424B2 (en) | 1990-06-04 |
Family
ID=13402812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6944484A Granted JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60211067A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01152265A (en) * | 1987-12-10 | 1989-06-14 | Hitachi Ltd | High-directivity vapor deposition apparatus |
US4962727A (en) * | 1988-09-12 | 1990-10-16 | Mitsubishi Denki Kabushiki Kaisha | Thin film-forming apparatus |
-
1984
- 1984-04-06 JP JP6944484A patent/JPS60211067A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01152265A (en) * | 1987-12-10 | 1989-06-14 | Hitachi Ltd | High-directivity vapor deposition apparatus |
US4962727A (en) * | 1988-09-12 | 1990-10-16 | Mitsubishi Denki Kabushiki Kaisha | Thin film-forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0225424B2 (en) | 1990-06-04 |
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